MJ2955 vs MJ3055 比較
詳細並排比較 MJ2955 由 onsemi 與 MJ3055 由 Seme LAB. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MJ2955 | MJ3055 |
|---|---|---|
| 品牌 | onsemi | Seme LAB |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | PNP | — |
| Polarity | PNP (complement of 2N3055) | NPN |
| 集極-射極電壓 (Vceo) | 60 V | — |
| 集極-基極電壓 (Vcbo) | 60 V | — |
| 射極-基極電壓 (Vebo) | 7 V | — |
| Continuous Collector Current (IC) | 15 A | — |
| Continuous Base Current (IB) | 7 A | — |
| Power Dissipation (PD) | 115 W at 25 °C case | — |
| Junction-to-Case Thermal Resistance (θJC) | 1.52 °C/W | — |
| DC Current Gain (hFE) | 20 to 70 (at IC = 4 A, VCE = 4 V) | [DATA_NEEDED: hFE range] |
| 集極-射極飽和電壓 (Vce(sat)) | 1.1 V typical (at IC = 15 A) | — |
| 轉換頻率 (ft) | 4 MHz | [DATA_NEEDED: fT] |
| 工作接面溫度 | -65 °C to +200 °C | — |
| 封裝 | TO-3 (TO-204-3) metal case | TO-3 (hermetically sealed metal can) |
| 安裝類型 | Chassis / Through-hole bolt-down | Through Hole |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 60 V |
| Maximum Collector Current (IC) | — | 10 A |
| Technology | — | Bipolar (BJT), silicon NPN |
| Power Dissipation | — | [DATA_NEEDED: power dissipation PD] |
| Collector-Emitter Saturation Voltage | — | [DATA_NEEDED: VCE(sat)] |
| Hermetic Sealing | — | Yes (metal can) |
| Screening Options | — | BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Complementary PNP Type | — | MJ2955 |
| Typical Applications | — | General-purpose amplifier and switching |