MMG3011NT1 vs MMG3012NT1 比較

詳細並排比較 MMG3011NT1 由 NXP Semiconductors 與 MMG3012NT1 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MMG3011NT1 MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 - 0-6 GHz, 15 dB Gain, 15 dBm InGaP HBT GPA | NXP

MMG3011NT1 ✓ 啟用中
NXP Semiconductors
MMG3012NT1 MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 - 6 GHz, 19 dB InGaP HBT GPA RF Amplifier | NXP

MMG3012NT1 ✓ 啟用中

規格比較

參數 MMG3011NT1 MMG3012NT1
品牌 NXP Semiconductors NXP Semiconductors
類別 RF Amplifiers RF Amplifiers
生命週期狀態 啟用中 啟用中
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
功能 General-purpose amplifier (GPA) General Purpose RF Amplifier (GPA), Class A
Frequency Range 0 Hz to 6000 MHz (0-6 GHz) 0 Hz to 6000 MHz (6 GHz)
Small-Signal Gain 15 dB (typical) 19 dB (typical, 900 MHz)
Output Power (P1dB) 15 dBm (typical) —
Operating Class Class A —
Input Matching Internally matched to 50 ohms —
Output Matching Internally matched to 50 ohms —
封裝 SOT-89-4 —
安裝類型 Surface Mount Surface Mount
Number of Terminals 4 —
Package Body Material Plastic/Epoxy —
Construction Component —
RoHS 狀態 [DATA_NEEDED: RoHS status not confirmed in retrieved snippets] Compliant
Lead-Free [DATA_NEEDED: lead-free status not confirmed in retrieved snippets] Yes
Output P1dB — 18.5 dBm (typical)
Output IP3 (OIP3) — [DATA_NEEDED: OIP3 value]
Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
供應電流 — [DATA_NEEDED: ICC typical]
Input Match — Internally matched to 50 ohms
Output Match — Internally matched to 50 ohms
Operating Case Temperature — -40 °C to +85 °C
Storage Temperature — -65 °C to +150 °C
封裝 / 外殼 — SOT-89-4 (TO-243AA), 4-pin surface mount
MSL 等級 — [DATA_NEEDED: MSL rating]
DC Blocking — Required on RF input and output (DC-coupled pins)

資料表與資源

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