MRF6S27085HR5 vs MRF6S27085HR3 比較

詳細並排比較 MRF6S27085HR5 由 NXP Semiconductors 與 MRF6S27085HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF6S27085HR5 MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 - 20W RF Power LDMOS 2.7GHz NI-780 | NXP

MRF6S27085HR5 ✓ 啟用中
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ 啟用中

規格比較

參數 MRF6S27085HR5 MRF6S27085HR3
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 LDMOS, N-Channel RF Power LDMOS, N-Channel, Enhancement-Mode, Lateral
Technology HV6 LDMOS Lateral DMOS (LDMOS)
Rated Drain-Source Voltage (Vdss) 68 V —
Test Supply Voltage (Vdd) 28 V —
Test Quiescent Current (Idq) 900 mA —
Operating Frequency Range 2500 MHz to 2700 MHz —
Test Frequency 2660 MHz 2.66 GHz
Output Power (Pout) 20 W (CW) —
Small-Signal Gain 15.5 dB at 2.66 GHz —
封裝 / 外殼 NI-780H-2L (ceramic acorn) NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
安裝類型 Chassis / Flange Mount Flange / Chassis mount with bolt-down thermal pad
腳位數 2-lead + flange 3 (Drain, Gate, Source)
Lead Free Status Lead-free (per distributor listing) —
Peak Reflow Temperature 260 C —
Time at Peak Reflow 40 s maximum —
RoHS 狀態 Compliant (per distributor listing) Compliant per Freescale/NXP material declaration
Application W-CDMA / multi-carrier base-station PA RF Power Amplifier
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6S27085HR3
Operating Frequency — 2600 MHz to 2700 MHz
Output Power (Average, P1dB-rated) — 20 W
Power Gain (Typ) — 15.5 dB
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Packaging — Tape & Reel (suffix HR3)

資料表與資源

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