MRF6S9160HSR3 vs MRF8S9102NR3 比較
詳細並排比較 MRF6S9160HSR3 由 NXP Semiconductors 與 MRF8S9102NR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ 最後購買機會規格比較
| 參數 | MRF6S9160HSR3 | MRF8S9102NR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 最後購買 | 啟用中 |
| 電晶體類型 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Lateral Enhancement-Mode MOSFET |
| Application | RF Power Amplifier | RF Power Amplifier, W-CDMA base station |
| Operating Frequency | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 920 MHz |
| Drain-Source Voltage (Vdss) Rated | 68 V | — |
| Operating Voltage (VDD) | 28 V | — |
| Test Bias Current (IDQ) | 1.2 A | — |
| Output Power (Pout, Avg.) | 35 W Avg. | — |
| Power Gain | 20.9 dB typical at 880 MHz | — |
| Drain Efficiency | 31% typical at 880 MHz | — |
| ACPR @ 750 kHz Offset | -46.8 dBc (N-CDMA) | — |
| 封裝 | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount | OM-780-2 (3-pin ceramic, flange mount) |
| 安裝類型 | Flange / Chassis Mount with screw holes | Chassis / flange mount with bolt-down thermal pad |
| Lead-Free Status | Lead free (HSR3 suffix) | — |
| Designed Waveforms | N-CDMA, GSM, GSM EDGE, multicarrier | — |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Family | — | MRF8S9102N / HV8 series |
| Operating Frequency Range | — | 865 MHz to 960 MHz |
| Drain-Source Operating Voltage (VDS) | — | 28 V (typical test condition) |
| Drain-Source Breakdown Voltage (VDSS) | — | 70 V (max) |
| Average Output Power (POUT) | — | 28 W |
| Drain Current (ID) at bias | — | 750 mA |
| Power Gain (Gp) | — | 23.1 dB |
| Modulation Format | — | Single W-CDMA (also Class AB/C capable) |
| 腳位數 | — | 3 |
| RoHS 狀態 | — | [DATA_NEEDED: rohs compliance] |
| Operating Mode | — | Class AB or Class C |