MRF7S21150HSR3 vs MW4IC2230MBR5 比較
詳細並排比較 MRF7S21150HSR3 由 NXP Semiconductors 與 MW4IC2230MBR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 Obsolete規格比較
| 參數 | MRF7S21150HSR3 | MW4IC2230MBR5 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | RF Amplifiers |
| 生命週期狀態 | Obsolete | Obsolete |
| 電晶體類型 | N-Channel LDMOS RF Power MOSFET | — |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Voltage | 28 V | — |
| Rated Drain Voltage (Vds max) | 65 V | — |
| Average Output Power | 44 W (W-CDMA) | — |
| Peak Output Power | 150 W | — |
| Power Gain | 17.5 dB (typical at 2.14 GHz) | 31 dB (typical) |
| Test Current | 1.35 A | — |
| 封裝 | NI-780S (NI-780 HS variant) | — |
| Configuration | Single, push-pull final stage | — |
| 安裝類型 | Flange / bolt-down with ceramic body | Surface Mount (with heatsink) |
| Lead Configuration | High-source-leads (HS) variant | — |
| Operating Mode | Class AB / Doherty | Class AB (typical) |
| Application | W-CDMA, LTE base station final-stage PA | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| JEDEC Qualification | JESD22 thermal/mechanical | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 1.6 GHz to 2.4 GHz |
| Output Power (Pout) | — | 30 W (CW) |
| Supply Voltage (Vdd) | — | 26 V nominal |
| Quiescent Current (Idq) | — | 60 mA |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| 封裝 / 外殼 | — | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) |
| Supported Air Interfaces | — | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Input Matching | — | Internal wideband matching network |
| Lead Finish | — | [DATA_NEEDED: lead finish] |