MRF8S19260HSR6 vs MRF8S19260HR6 比較
詳細並排比較 MRF8S19260HSR6 由 NXP Semiconductors 與 MRF8S19260HR6 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRF8S19260HSR6 | MRF8S19260HR6 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | Freescale Semiconductor (now NXP Semiconductors) |
| Part Number | MRF8S19260HSR6 | — |
| 電晶體類型 | LDMOS, N-Channel, Dual | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 1930 MHz to 1990 MHz | — |
| Test Frequency | 1.99 GHz | 1.96 GHz (1960 MHz) |
| Drain-Source Voltage (Max Rated) | 65 V | — |
| Operating Drain Voltage (Typical) | 30 V | — |
| Continuous Drain Current (Test) | 1.6 A | — |
| Output Power (CW / Avg) | 74 W average | — |
| Power Gain | 18.2 dB at 1.99 GHz | — |
| 封裝 / 外殼 | NI-1230S-8 (ceramic air-cavity bolt-down) | — |
| 安裝類型 | Chassis / Flange Mount (through-hole RF bolt-down) | Chassis / heatsink mount (bolt-down flange) |
| Lead Free Status | Compliant (per DigiKey listing) | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: confirm from NXP product page] |
| Operating Mode | Class AB and Class C capable | — |
| Application | W-CDMA, CDMA, multi-carrier cellular base station PA | — |
| Technology | — | Laterally Diffused Metal-Oxide Semiconductor (LDMOS) |
| Frequency Range | — | 1930 MHz to 1990 MHz |
| Drain-Source Voltage (V(BR)DSS) Rated | — | 65 V |
| Operating Drain Voltage (Test) | — | 30 V |
| Test Bias Current | — | 1.6 A |
| Average Output Power (Pout) | — | 74 W |
| Power Gain (Gp) | — | 18.2 dB typical at 1.99 GHz, 30 V, 1.6 A |
| Drain Efficiency | — | [DATA_NEEDED: typical % at rated conditions] |
| Application Class | — | Class AB or Class C |
| Modulation Support | — | CDMA, W-CDMA, multi-carrier GSM/EDGE/LTE |
| 封裝 | — | NI-1230-8 (ceramic bolt-down, 2-lead flange) |
| Lead-Free Status | — | Yes |