MT40A256M16GE-075E:B vs K4A4G165WE-BCTD 比較
詳細並排比較 MT40A256M16GE-075E:B 由 Micron Technology 與 K4A4G165WE-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 啟用中
規格比較
| 參數 | MT40A256M16GE-075E:B | K4A4G165WE-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $3.95 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| 記憶體容量 | 4 Gbit | 4 Gbit |
| 組織 | 256M x 16 | — |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s (DDR4-2666) | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| 封裝 | 96-FBGA (9 x 14 mm) | FBGA-96 (TFBGA) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range for standard grade] | 0C to +85C |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Memory Organization | — | 256M x 16 |
| 介面 | — | Parallel, x16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| RoHS 狀態 | — | Compliant (per JLCPCB listing) |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |