MT40A256M16GE-075E:B vs K4AAG165WB-MCRC 比較
詳細並排比較 MT40A256M16GE-075E:B 由 Micron Technology 與 K4AAG165WB-MCRC 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 啟用中
規格比較
| 參數 | MT40A256M16GE-075E:B | K4AAG165WB-MCRC |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $3.95 | — |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 4 Gbit | — |
| 組織 | 256M x 16 | 1G x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | 1200 MHz (DDR4-2400) |
| 資料速率 | 2666 MT/s (DDR4-2666) | 2400 Mbps (DDR4-2400) |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | [DATA_NEEDED: refresh rate 1x/2x/4x support] |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| 封裝 | 96-FBGA (9 x 14 mm) | 96FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range for standard grade] | 0 C to +85 C |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 16 Gb (2 GB) |
| 供應電壓 | — | 1.2 V |
| 介面 | — | Parallel, DDR4 |
| Bank Architecture | — | DDR4 bank-group architecture |
| Peak Bandwidth (per device) | — | 19.2 GB/s (estimated: 2400 Mbps x 16 bits / 8) |
| CAS 延遲 | — | [DATA_NEEDED: CL value per Samsung datasheet speed bin table] |
| RoHS 狀態 | — | Compliant (per LCSC/JLCPCB listing: FBGA-96 DRAM ROHS) |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |