MT40A256M16GE-083E vs MT40A256M16GE-075E:B 比較
詳細並排比較 MT40A256M16GE-083E 由 Micron Technology 與 MT40A256M16GE-075E:B 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MT40A256M16GE-083E ✗ 停產Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ 啟用中規格比較
| 參數 | MT40A256M16GE-083E | MT40A256M16GE-075E:B |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 單價 (USD) | — | $3.95 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 組織 | 256M x 16 | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.33 GHz |
| 供應電壓 | 1.2 V | — |
| 封裝 | 96-ball FBGA, 9 x 14 mm | 96-FBGA (9 x 14 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | Parallel | — |
| Technology | CMOS DRAM | — |
| ECCN | EAR99 | — |
| Country of Origin | China | — |
| 無鹵素 | Compliant | — |
| Lead Free | Yes | — |
| Introduction Date | August 2017 | — |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range for standard grade] |
| CAS 延遲 | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| Refresh | [DATA_NEEDED: refresh rate] | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| 記憶體容量 | — | 4 Gbit |
| Memory Interface | — | Parallel |
| 資料速率 | — | 2666 MT/s (DDR4-2666) |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |