MT40A512M16JY-075E vs MT40A512M16LY-075:E 比較
詳細並排比較 MT40A512M16JY-075E 由 Micron Technology 與 MT40A512M16LY-075:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M16JY-075E | MT40A512M16LY-075:E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | 8 Gbit (512M x 16) |
| 組織 | 512M x 16 | — |
| Clock Frequency | 1.33 GHz | 1.33 GHz |
| 資料速率 | 2666 MT/s | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.14V to 1.26V | 1.2V ±60mV |
| VPP Voltage | 2.5V (-125mV, +250mV) | — |
| 介面 | Parallel | Parallel |
| 封裝 | 96-FBGA (8x14) | 96-FBGA (7.5x13.5mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | 0°C to +95°C (TC) | 0°C to +95°C |
| Refresh Time | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| RoHS 狀態 | Compliant | — |
| 功能特色 | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC | — |
| I/O Type | 1.2V pseudo open-drain | 1.2V pseudo open-drain |
| CAS 延遲 | — | 19 |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| RoHS | — | Compliant |