MT40A512M16LY-062E-ATE vs MT40A512M16LY-062E:E 比較
詳細並排比較 MT40A512M16LY-062E-ATE 由 Micron Technology 與 MT40A512M16LY-062E:E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ 啟用中Micron Technology
MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron
MT40A512M16LY-062E:E ✓ 啟用中規格比較
| 參數 | MT40A512M16LY-062E-ATE | MT40A512M16LY-062E:E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | SDRAM - DDR4 |
| Density | 8 Gbit | 8 Gbit (512M x 16) |
| 組織 | 512M x 16 | x16 |
| 資料速率 | 3200 MT/s (DDR4-3200) | 3200 MT/s |
| Clock Frequency | 1.6 GHz | 1600 MHz (DDR4-3200, -062E speed grade) |
| Access Time | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VPP) | 2.5 V | — |
| 封裝 | 96-ball FBGA (7.5 x 13.5 mm) | — |
| Ball Pitch | 0.8 mm | — |
| 工作溫度 | -40C to +105C (automotive) | [DATA_NEEDED: exact operating temp range for -062E:E base part; IT:E variant is -40C to +95C per Micron] |
| Speed Grade | -062E (0.625 ns tCK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| On-Die Termination | Yes (ODT) | Yes (ODT) |
| ZQ Calibration | Yes | Yes |
| Data Mask | Yes (DM) | — |
| Refresh Mode | Auto self-refresh | — |
| Access Time (tRCD/tRP) | — | 19 ns (per DigiKey listing) |
| Voltage - Supply (VDD) | — | 1.2 V (typical), 1.14 V min / 1.26 V max |
| Voltage - VPP | — | 2.5 V (typical) |
| 介面 | — | Parallel (LVCMOS / SSTL) |
| 封裝 / 外殼 | — | 96-TFBGA (7.5 x 13.5 mm) |
| Refresh Cycles | — | 65536 |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (data channel) |
| Data Mask Function | — | Yes |
| Auto Precharge | — | Yes |
| Auto Self-Refresh | — | Yes (LPASR) |
| Asynchronous Reset | — | Yes |