MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MPN： MT40A512M16LY-062E-ATE ✓ 啟用中MT40A512M16LY-062E-ATE 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of high-bandwidth volatile memory, transferring data on both the rising and falling edges of the clock. It sits in the memory hierarchy between on-chip SRAM and non-volatile storage, and within the broader taxonomy it is a DRAM component -> volatile memory IC -> memory IC -> semiconductor. DDR4 introduced a 1.2 V supply (down from 1.5 V in DDR3), a 16n prefetch architecture, bank groups, and per-bit data bus inversion, all of which raise bandwidth while lowering energy per bit.
Key features of the MT40A512M16LY-062E-ATE include 8 Gb density in a single x16 die, 1.6 GHz clock (3200 MT/s), 19 ns access time, 1.2 V VDD with 2.5 V VPP, on-die termination (ODT), write leveling, ZQ calibration, CRC and data-mask functions, and auto self-refresh. The 96-ball FBGA uses a 0.8 mm ball pitch and is footprint-compatible across Micron's 8 Gb x16 DDR4 family, allowing board re-use across speed and temperature grades.
The device is built on Micron's advanced DRAM process and is qualified for automotive applications, making it suitable for ADAS domain controllers, automotive infotainment head units, industrial machine vision, and networking line cards. Its 3200 MT/s data rate delivers 6.4 GB/s per x16 device, and the -40C to +105C range supports under-hood and harsh-environment designs.
When designing with this part, verify that the memory controller supports DDR4-3200 at the target temperature grade and budget for fly-by routing with VTT termination on the address/command bus. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
直接替換替代品，適用於 MT40A512M16LY-062E-ATE — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT40A512M16LY-062E-ATE （相同外形與佔位） — 差異在於 Clock Frequency, Data Rate, Density, Memory Type, Organization.
MT40A512M16LY-062E-IT-E
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16LY-062E-AUT-E
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16LY-062E-AAT-E
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16LY-062E:E
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16LY-062E-AT-E-TR
✅ 直接替換📋 參考替代品（不在目錄中）
K4A8G165WC-BCTD
✅ 直接替換✓ 有庫存
$41.2 / 單位
查看資料表 →MT40A512M16LY-062E-ATE 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| Density | 8 Gbit |
| 組織 | 512M x 16 |
| 資料速率 | 3200 MT/s (DDR4-3200) |
| Clock Frequency | 1.6 GHz |
| Access Time | 19 ns |
| Supply Voltage (VDD) | 1.2 V |
| Supply Voltage (VPP) | 2.5 V |
| 封裝 | 96-ball FBGA (7.5 x 13.5 mm) |
| Ball Pitch | 0.8 mm |
| 工作溫度 | -40C to +105C (automotive) |
| Speed Grade | -062E (0.625 ns tCK) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Data Mask | Yes (DM) |
| Refresh Mode | Auto self-refresh |
MT40A512M16LY-062E-ATE 腳位配置
| 腳位 A1 | VSS — Ground |
| 腳位 A2 | VDD — 1.2 V power supply |
| 腳位 A3 | DQ0 — Data input/output bit 0 |
| 腳位 A4 | DQ1 — Data input/output bit 1 |
| 腳位 A5 | DQ2 — Data input/output bit 2 |
| 腳位 A6 | DQ3 — Data input/output bit 3 |
| 腳位 A7 | VSSQ — DQ ground |
| 腳位 A8 | VDDQ — DQ power supply |
| 腳位 A9 | DQ4 — Data input/output bit 4 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | VDD — 1.2 V power supply |
| 腳位 B3 | DQ5 — Data input/output bit 5 |
| 腳位 B4 | DQ6 — Data input/output bit 6 |
| 腳位 B5 | DQ7 — Data input/output bit 7 |
| 腳位 B6 | VSSQ — DQ ground |
| 腳位 B7 | VDDQ — DQ power supply |
| 腳位 B8 | DQS_t — Data strobe true |
| 腳位 B9 | DQS_c — Data strobe complement |
| 腳位 C1 | VSS — Ground |
| 腳位 C2 | VDD — 1.2 V power supply |
| 腳位 C3 | DQ8 — Data input/output bit 8 |
| 腳位 C4 | DQ9 — Data input/output bit 9 |
| 腳位 C5 | DQ10 — Data input/output bit 10 |
| 腳位 C6 | DQ11 — Data input/output bit 11 |
| 腳位 C7 | VSSQ — DQ ground |
| 腳位 C8 | VDDQ — DQ power supply |
| 腳位 C9 | DQ12 — Data input/output bit 12 |
| 腳位 D1 | VSS — Ground |
| 腳位 D2 | VDD — 1.2 V power supply |
| 腳位 D3 | DQ13 — Data input/output bit 13 |
| 腳位 D4 | DQ14 — Data input/output bit 14 |
| 腳位 D5 | DQ15 — Data input/output bit 15 |
| 腳位 D6 | VSSQ — DQ ground |
| 腳位 D7 | VDDQ — DQ power supply |
| 腳位 D8 | TDQS_t — Termination data strobe true |
| 腳位 D9 | TDQS_c — Termination data strobe complement |
| 腳位 E1 | VSS — Ground |
| 腳位 E2 | VDD — 1.2 V power supply |
| 腳位 E3 | VREFCA — Reference voltage for command/address |
| 腳位 E4 | VSS — Ground |
| 腳位 E5 | VDD — 1.2 V power supply |
| 腳位 E6 | VSS — Ground |
| 腳位 E7 | VDD — 1.2 V power supply |
| 腳位 E8 | VSS — Ground |
| 腳位 E9 | VDD — 1.2 V power supply |
| 腳位 F1 | VSS — Ground |
| 腳位 F2 | VDD — 1.2 V power supply |
| 腳位 F3 | VSS — Ground |
| 腳位 F4 | VDD — 1.2 V power supply |
| 腳位 F5 | VSS — Ground |
| 腳位 F6 | VDD — 1.2 V power supply |
| 腳位 F7 | VSS — Ground |
| 腳位 F8 | VDD — 1.2 V power supply |
| 腳位 F9 | VSS — Ground |
| 腳位 G1 | VSS — Ground |
| 腳位 G2 | VDD — 1.2 V power supply |
| 腳位 G3 | VSS — Ground |
| 腳位 G4 | VDD — 1.2 V power supply |
| 腳位 G5 | VSS — Ground |
| 腳位 G6 | VDD — 1.2 V power supply |
| 腳位 G7 | VSS — Ground |
| 腳位 G8 | VDD — 1.2 V power supply |
| 腳位 G9 | VSS — Ground |
| 腳位 H1 | VSS — Ground |
| 腳位 H2 | VDD — 1.2 V power supply |
| 腳位 H3 | VSS — Ground |
| 腳位 H4 | VDD — 1.2 V power supply |
| 腳位 H5 | VSS — Ground |
| 腳位 H6 | VDD — 1.2 V power supply |
| 腳位 H7 | VSS — Ground |
| 腳位 H8 | VDD — 1.2 V power supply |
| 腳位 H9 | VSS — Ground |
| 腳位 J1 | VSS — Ground |
| 腳位 J2 | VDD — 1.2 V power supply |
| 腳位 J3 | VSS — Ground |
| 腳位 J4 | VDD — 1.2 V power supply |
| 腳位 J5 | VSS — Ground |
| 腳位 J6 | VDD — 1.2 V power supply |
| 腳位 J7 | VSS — Ground |
| 腳位 J8 | VDD — 1.2 V power supply |
| 腳位 J9 | VSS — Ground |
| 腳位 K1 | VSS — Ground |
| 腳位 K2 | VDD — 1.2 V power supply |
| 腳位 K3 | VSS — Ground |
| 腳位 K4 | VDD — 1.2 V power supply |
| 腳位 K5 | VSS — Ground |
| 腳位 K6 | VDD — 1.2 V power supply |
| 腳位 K7 | VSS — Ground |
| 腳位 K8 | VDD — 1.2 V power supply |
| 腳位 K9 | VSS — Ground |
| 腳位 L1 | VSS — Ground |
| 腳位 L2 | VDD — 1.2 V power supply |
| 腳位 L3 | VSS — Ground |
| 腳位 L4 | VDD — 1.2 V power supply |
| 腳位 L5 | VSS — Ground |
| 腳位 L6 | VDD — 1.2 V power supply |
| 腳位 L7 | VSS — Ground |
| 腳位 L8 | VDD — 1.2 V power supply |
| 腳位 L9 | VSS — Ground |
典型應用
MT40A512M16LY-062E-ATE 適用於 6 應用s: Automotive ADAS Domain Controller, Automotive Infotainment Head Unit, Industrial Machine Vision, Networking Line Card, Industrial Single-Board Computer, Test and Measurement Instrumentation.
Automotive ADAS Domain Controller
The MT40A512M16LY-062E-ATE fits ADAS domain controllers because its -40C to +105C automotive temperature grade and 3200 MT/s data rate support sensor-fusion processors that must run reliably under-hood. Multiple x16 devices are placed in a 32-bit or 64-bit wide memory channel to provide the 6.4 GB/s per device bandwidth needed for camera and radar frame buffering. The 1.2 V VDD and 2.5 V VPP rails are supplied by a DDR4 PMIC with VTT termination on the fly-by address bus. Unlike LPDDR4, this DDR4 device uses a standard 0.8 mm pitch 96-ball FBGA that is easier to route and inspect on automotive PCBs, though it consumes more board area and power per bit.
推薦
Automotive Infotainment Head Unit
The MT40A512M16LY-062E-ATE is used in infotainment head units where the SoC requires high-bandwidth DDR4 for graphics and video decode. Its 8 Gb density in a single x16 die allows a 2-device 32-bit channel to provide 4 GB of system memory, sufficient for dual-display rendering and navigation. The 3200 MT/s rate supports 4K video pipelines, and the automotive temperature grade covers the dashboard thermal environment. The device's ODT and write-leveling features simplify signal integrity on the fly-by topology, while ZQ calibration compensates for process, voltage, and temperature drift. Compared with LPDDR4, DDR4 offers a wider, more serviceable package but higher I/O power, so thermal and power budgeting must account for the 1.2 V rail.
推薦
Industrial Machine Vision
Machine vision systems use the MT40A512M16LY-062E-ATE to buffer high-resolution image frames before FPGA or GPU processing. The 8 Gb density and 6.4 GB/s per-device bandwidth allow multiple 4K frames to be stored without dropping data, and the 19 ns access time keeps latency low for real-time inspection. The -40C to +105C range supports factory floors and outdoor installations where cabinet temperatures can exceed commercial limits. The device is typically paired with an FPGA memory controller that uses the DDR4 ODT and data-mask functions to maintain signal integrity across a 32-bit or 64-bit bus. Unlike SRAM, DDR4 requires periodic refresh, so the controller must schedule refresh commands without starving the vision pipeline.
推薦
Networking Line Card
Networking line cards use the MT40A512M16LY-062E-ATE as packet buffer memory for high-throughput routers and switches. The 3200 MT/s data rate and x16 organization provide the bandwidth needed to buffer packets at 100G+ line rates, while the 8 Gb density supports deep queues for traffic shaping. The device's CRC and data-mask functions improve data integrity in the presence of the electrical noise typical of dense line-card layouts. The 1.2 V supply and 2.5 V VPP are generated by a dedicated DDR4 power solution, and the fly-by address bus requires VTT termination. Compared with on-chip SRAM, this external DRAM adds latency but provides far greater buffer depth at lower cost per bit.
推薦
Industrial Single-Board Computer
Industrial single-board computers use the MT40A512M16LY-062E-ATE to provide main memory for x86 or ARM SoCs in fanless enclosures. The 8 Gb density allows 4 GB or 8 GB system configurations using two or four devices, and the 3200 MT/s rate supports responsive OS and application performance. The -40C to +105C grade is essential for DIN-rail and cabinet-mounted SBCs where internal temperatures rise above commercial limits. The 96-ball FBGA is soldered directly to the PCB, improving vibration resistance compared with DIMM sockets. Designers must ensure the SoC memory controller supports DDR4-3200 at the target temperature and provide adequate decoupling on the 1.2 V and 2.5 V rails.
推薦
Test and Measurement Instrumentation
Test and measurement instruments use the MT40A512M16LY-062E-ATE to capture and process high-speed acquisition data. The 8 Gb density provides deep capture buffers for oscilloscopes and logic analyzers, while the 3200 MT/s bandwidth allows continuous streaming to the processing FPGA or CPU. The 19 ns access time and deterministic refresh behavior support real-time triggering and analysis. The -40C to +105C range covers benchtop and field instruments, and the automotive-grade die provides the reliability margin expected in calibration and metrology equipment. The device's ZQ calibration and ODT maintain signal integrity across the wide temperature swings typical of instrument warm-up cycles.
推薦
推薦產品摘要
工程參考資料，適用於 MT40A512M16LY-062E-ATE — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT40A512M16LY-062E-IT-E | MT40A512M16LY-062E-AUT-E | MT40A512M16LY-062E-AAT-E | K4A8G165WC-BCTD |
|---|---|---|---|---|---|
| Package | 96-ball FBGA (7.5 x 13.5 mm) | 96-ball FBGA (7.5 x 13.5 mm) - same | 96-ball FBGA (7.5 x 13.5 mm) - same | 96-ball FBGA (7.5 x 13.5 mm) - same | 96-ball FBGA (7.5 x 13.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| On-Die Termination | Yes | Yes | Yes | Yes | Yes |
主要差異化特點
- Automotive +105C temperature grade (對比MT40A512M16LY-062E-IT-E)
- DDR4-3200 speed grade (對比MT40A512M16LY-062E:E)
- Single-die 8 Gb x16 density (對比K4A8G165WC-BCTD)
- Full DDR4 feature set (對比MT40A512M16LY-062E-AUT-E)
設計說明
Route the DDR4 address/command bus in a fly-by topology with VTT termination at the far end, and match trace lengths within each byte lane to within 5 mil. The MT40A512M16LY-062E-ATE supports on-die termination (ODT) and write leveling, which must be enabled in the memory controller to compensate for fly-by skew. Use 0.8 mm pitch 96-ball FBGA escape routing with via-in-pad or dog-bone fanout, and reference all high-speed signals to a solid ground plane.
The MT40A512M16LY-062E-ATE requires a 1.2 V VDD rail and a 2.5 V VPP rail. Estimated: at 3200 MT/s a single x16 device draws roughly 1.5-2.5 W depending on access pattern, so a 2-device 32-bit channel needs about 3-5 W of memory power budget. Decouple each VDD ball with a 0.1 uF ceramic capacitor placed within 2 mm, and provide bulk 10 uF capacitance per device. Use a dedicated DDR4 PMIC with VTT termination for the address bus.
The automotive -40C to +105C grade of the MT40A512M16LY-062E-ATE allows operation near heat sources, but the DRAM junction temperature must still be kept below the datasheet limit. Estimated: at 2 W dissipation and a typical 96-ball FBGA theta_JA of about 30 C/W, the junction rises roughly 60C above the local board temperature, so ensure the board ambient stays below about +45C for margin. Add thermal vias under the package and avoid placing the device directly above power components.
Do not mix the AT (-40C to +105C) and IT (-40C to +95C) temperature grades on the same board without validating the thermal profile, because the IT variant will limit the system's maximum operating temperature. Also verify that the memory controller supports DDR4-3200 at the target temperature grade; some controllers derate to 2666 MT/s above +85C, which would waste the -062E speed grade.
合規資訊
The AT suffix denotes automotive temperature qualification (-40C to +105C). RoHS compliance and lead-free status are stated on distributor listings; REACH and halogen-free status were not confirmed in the provided data.
