MT40A512M16LY-062E:E - 8Gb DDR4-3200 x16 SDRAM | Micron
MPN： MT40A512M16LY-062E:E ✓ 啟用中MT40A512M16LY-062E:E 概覽
A DDR4 SDRAM is a synchronous dynamic random-access memory that uses an 8n-prefetch architecture, dual-rank or single-rank banking, and a bank-group topology introduced in the JEDEC JESD79-4 standard. In the modern memory hierarchy, DDR4 sits between LPDDR4 (mobile, low power) and HBM (high bandwidth, stacked) as the mainstream workhorse DRAM for servers, desktops, embedded computing, and networking. Each generation introduces tighter timing budgets, lower voltage rails, and higher peak transfer rates; DDR4-3200 doubles the peak transfer rate of DDR3-1600 while cutting VDD from 1.5 V to 1.2 V.
The MT40A512M16LY-062E:E supports JEDEC-standard DDR4 features including fine granularity refresh, low-power auto self-refresh (LPASR), per-DRAM addressability, multipurpose register (MPR) readouts, command/address (CA) parity, and gear-down timing modes. The x16 organization with 16-bit data width suits applications that require moderate bandwidth in a small footprint, such as FPGAs, networking line cards, industrial HMI controllers, and embedded vision subsystems.
Industrial temperature grade parts in this family (IT:E suffix) operate from -40C to +95C, while the commercial-grade -062E:E part is typically rated 0C to +95C. The 96-ball FBGA uses a standard JEDEC ballout for x16 DDR4, enabling PCB layout reuse across density variants of the same family.
Typical applications include networking switches and routers, FPGA-based accelerators (as a companion to Kintex/UltraScale FPGAs), industrial PCs and SBCs, telecom baseband processing, and edge-AI inference platforms. Designers commonly pair this part with a memory controller IP core or a host SoC that supports DDR4-3200.
When designing with this device, ensure the PCB fly-by topology recommended by Micron is followed for the address/command/control nets, with VTT termination at the far end and matched DQ/DQS trace lengths. Decoupling must follow the Micron reference layout for the 96-ball FBGA, with VPP decoupling placed within 100 mils of the balls.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers accelerate component selection and PCB layout decisions for DDR4 systems.
直接替換替代品，適用於 MT40A512M16LY-062E:E — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT40A512M16LY-062E:E （相同外形與佔位） — 差異在於 Clock Frequency, Data Rate, Interface, Package, Memory Size.
MT40A512M16LY-062E IT:E
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16LY-062E AAT:E
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16LY-062E AIT:E
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16LY-062E AUT:E
✅ 直接替換📋 參考替代品（不在目錄中）
AS4C512M16D4A-62BCN
✅ 直接替換聯絡詢價
查看資料表 →AS4C512M16D4B-62BCNTR
✅ 直接替換聯絡詢價
查看資料表 →MT40A512M16LY-062E:E 最大額定值與電氣特性
| 記憶體類型 | SDRAM - DDR4 |
| Density | 8 Gbit (512M x 16) |
| 組織 | x16 |
| Clock Frequency | 1600 MHz (DDR4-3200, -062E speed grade) |
| 資料速率 | 3200 MT/s |
| Access Time (tRCD/tRP) | 19 ns (per DigiKey listing) |
| Voltage - Supply (VDD) | 1.2 V (typical), 1.14 V min / 1.26 V max |
| Voltage - VPP | 2.5 V (typical) |
| 介面 | Parallel (LVCMOS / SSTL) |
| 封裝 / 外殼 | 96-TFBGA (7.5 x 13.5 mm) |
| 安裝類型 | Surface Mount |
| Refresh Cycles | 65536 |
| On-Die Termination | Yes (ODT) |
| Write Leveling | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes (data channel) |
| Data Mask Function | Yes |
| Auto Precharge | Yes |
| Auto Self-Refresh | Yes (LPASR) |
| Asynchronous Reset | Yes |
| RoHS 狀態 | Compliant |
MT40A512M16LY-062E:E 96-tfbga (7.5 x 13.5 mm) 腳位配置指南
MT40A512M16LY-062E:E（96-tfbga (7.5 x 13.5 mm) 封裝）的腳位配置。 此數位 IC 包含 GPIO、通訊介面（UART、SPI、I2C）與電源腳位。替代腳位功能與配置選項請參閱製造商資料表。對嵌入式系統設計與 PCB 佈局至關重要。
無詳細腳位定義資料： MT40A512M16LY-062E:E.
請參閱 資料表 以查看完整腳位配置。
典型應用
MT40A512M16LY-062E:E 適用於 6 應用s: Networking Switch and Router Line Cards, FPGA-Based Accelerator Memory (Xilinx Kintex/UltraScale), Industrial PC and Single-Board Computing, Telecom Baseband and Radio Unit Processing, Edge AI Inference Platforms, Automotive Infotainment and ADAS.
Networking Switch and Router Line Cards
The MT40A512M16LY-062E:E provides 6.4 GB/s peak bandwidth per x16 device (3200 MT/s x 16 bits) at 1.2 V VDD, fitting packet-buffer and forwarding-table requirements in Ethernet switches and core routers. Its on-die termination (ODT) simplifies the fly-by topology required by networking ASICs, while ZQ calibration and write-leveling compensate board-induced timing skew across long backplane traces. Two x16 devices stacked on a common data bus deliver 12.8 GB/s and 16 Gbit density. Designers pairing this DDR4 with switches like the Marvell Prestera series achieve sub-microsecond packet lookup latency.
推薦
FPGA-Based Accelerator Memory (Xilinx Kintex/UltraScale)
The MT40A512M16LY-062E:E pairs with Xilinx Kintex-7, Kintex UltraScale, and Kintex UltraScale+ FPGAs to provide external working memory for DSP, video processing, and AI inference pipelines. The 96-ball TFBGA shares the same footprint as Xilinx memory-interface MIG reference designs, and DDR4-3200 throughput saturates the 16-bit MIG interface at 6.4 GB/s. On-die ECC-free operation suits non-critical datapath buffering; write-leveling and DBI features simplify MIG PHY calibration. Layout follows Xilinx UG583 fly-by routing, with VTT termination at the FPGA far-end.
推薦
Industrial PC and Single-Board Computing
The MT40A512M16LY-062E:E suits industrial PCs, edge controllers, and SBCs that need DDR4 capacity in a compact footprint. At 7.5 x 13.5 mm, the 96-ball TFBGA fits Mini-ITX and 3.5-inch SBC layouts, and the 1.2 V VDD reduces motherboard power budget versus DDR3L (1.35 V). The -062E speed grade (19 ns tRCD/tRP) is widely supported by x86 SoCs, embedded Ryzen V-series processors, and NXP i.MX8M application processors. Multiple parts can be paralleled for higher density without controller changes.
推薦
Telecom Baseband and Radio Unit Processing
In 4G/5G radio units and baseband processing boards, the MT40A512M16LY-062E:E provides bulk DDR4 memory for FEC decoding, channel estimation buffers, and protocol-stack queues. DDR4-3200's 25.6 GB/s peak per quad-device array exceeds CPRI and eCPRI throughput requirements. The IT:E industrial-temp variant operates at -40C to +95C for outdoor radio-unit enclosures, and the wide voltage tolerance (1.14 V-1.26 V VDD) accommodates the noisy supplies typical of PoE-powered small cells.
推薦
Edge AI Inference Platforms
The MT40A512M16LY-062E:E serves as weight/activation memory for edge-AI inference boards based on NPU or FPGA accelerators. Its 8 Gbit capacity holds quantized ResNet-50 or MobileNet weights for embedded vision, while 3200 MT/s throughput feeds activation tensors at >100 fps. The 1.2 V VDD aligns with low-power inference SoCs like NXP i.MX8M Plus and Rockchip RK3588, and ZQ calibration maintains signal integrity at the elevated operating temperatures of fanless edge enclosures.
推薦
Automotive Infotainment and ADAS
The MT40A512M16LY-062E AUT:E / AAT:E / AIT:E speed-grade variants of this Micron DDR4 family serve automotive infotainment head units, instrument clusters, and ADAS domain controllers. AEC-Q100 qualification, combined with 3200 MT/s throughput, supports simultaneous operation of multi-display cockpit systems and surround-view ADAS pipelines. The x16 organization balances bandwidth and PCB-routing density in space-constrained automotive enclosures. Designers select the AAT:E variant for head-unit use, AUT:E for ADAS, and AIT:E for body controllers.
推薦
推薦產品摘要
工程參考資料，適用於 MT40A512M16LY-062E:E — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT40A512M16LY-062E IT:E | MT40A512M16LY-062E AAT:E | MT40A512M16LY-062E AIT:E | MT40A512M16LY-062E AUT:E | AS4C512M16D4A-62BCN | AS4C512M16D4B-62BCN |
|---|---|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory | Alliance Memory |
| Package | 96-TFBGA (7.5 x 13.5 mm) | 96-TFBGA (7.5 x 13.5 mm) - same | 96-TFBGA (7.5 x 13.5 mm) - same | 96-TFBGA (7.5 x 13.5 mm) - same | 96-TFBGA (7.5 x 13.5 mm) - same | 96-TFBGA (7.5 x 13.5 mm) - same | 96-TFBGA (7.5 x 13.5 mm) - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | x16 (512M x 16) | x16 | x16 | x16 | x16 | x16 | x16 |
| Speed Grade / Data Rate | DDR4-3200 (3200 MT/s) | DDR4-3200 | DDR4-3200 | DDR4-3200 | DDR4-3200 | DDR4-3200 (62B speed grade) | DDR4-3200 (62B speed grade) |
| AEC-Q100 Qualification | Not qualified | Not qualified (industrial only) | Grade 2 qualified | Grade 2 qualified (industrial) | Grade 1 qualified | Not qualified | Not qualified |
| Supply Voltage VDD | 1.2 V (1.14 V-1.26 V) | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| VPP Voltage | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| Status (as of 2026-10-05) | Active | Active | Active | Active | Obsolete (per Micron catalog) | Active (Alliance Memory) | Active (Alliance Memory) |
主要差異化特點
- JEDEC JESD79-4 standard x16 96-ball TFBGA ballout enables PCB reuse across temperature grades (對比AS4C512M16D4A-62BCN)
- Tiered temperature-grade portfolio (commercial, industrial, AEC-Q100) within a single package family (對比MT40A512M16LY-062E IT:E)
- Wide distributor availability with multiple cross-reference documents published (對比AS4C512M16D4B-62BCN)
設計說明
Follow Micron's fly-by topology recommendation for address, command, and control nets: place termination VTT (0.6 V for DDR4) at the far end of each fly-by chain. Route DQ, DQS_t, DQS_c, and DBI_n as point-to-point 50-ohm impedance-matched differential traces with matched lengths within the byte lane (typically +/- 5 mil). VPP (2.5 V) decoupling capacitors must be placed within 100 mils of the TFBGA balls, with one 1 uF X7R cap per VPP ball plus one 4.7 uF bulk per channel.
Enable write leveling, read leveling, and ZQ calibration per JEDEC JESD79-4 mode-register sequence during controller initialization. The DDR4 command/address parity bit (PAR) must be verified before any read/write operation. CA parity error causes the DRAM to assert ALERT_n, which the controller must handle by re-issuing commands. Data bus inversion (DBI) reduces SSO noise on high-frequency transitions; ensure the controller's PHY supports DBI for x16 configurations to minimize ground bounce.
At full DDR4-3200 data rate with all 16 DQ lines switching, the 96-ball TFBGA dissipates approximately 0.5 W to 0.8 W typical, depending on read/write mix and termination strength. Maintain junction temperature below 95C for commercial grade or 105C for AEC-Q100 Grade 2. Forced airflow of 1-2 m/s is recommended in enclosed chassis. Avoid placing the TFBGA directly above a heat-dissipating component on the PCB backside, as the thin dielectric limits top-side heat spreading.
Do not apply VDD before VPP - the JEDEC JESD79-4 power-up sequence requires VPP (2.5 V) to stabilize before VDD (1.2 V) and VDDQ. Apply power in the order: VPP -> VDDQ -> VDD, with monotonic rise times. After power-up, hold RESET# low for at least 200 us to complete initialization. Do not assert CKE high before RESET# goes high, and do not issue any command before tRFC + tXPR timing window elapses after RESET# deassertion. Failure to follow power sequencing may damage the DRAM.
合規資訊
RoHS compliant per Micron product line. Lead-free BGA balls. AEC-Q100 not applicable to base -062E:E; available on AUT:E, AAT:E, and AIT:E speed-grade variants. Halogen-free status not explicitly listed in verified data; set to unknown per data-availability rule.
