MT53E256M16D1FW-046 vs H5CG46AGBDX017 比較
詳細並排比較 MT53E256M16D1FW-046 由 Micron Technology 與 H5CG46AGBDX017 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT53E256M16D1FW-046 - 4Gb LPDDR4X SDRAM 2133MHz | Micron
MT53E256M16D1FW-046 ✓ 啟用中
規格比較
| 參數 | MT53E256M16D1FW-046 | H5CG46AGBDX017 |
|---|---|---|
| 品牌 | Micron Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $7.20 | — |
| 記憶體類型 | SDRAM - Mobile LPDDR4X | DDR5 SDRAM |
| Density | 4 Gbit | 16 Gb |
| 組織 | 256M x 16 | 1G x 16 |
| 資料速率 | 2133 Mbps/pin (2.133 GHz) | 5600 Mbps/pin |
| Clock Cycle Time | 3.5 ns | — |
| Core Supply Voltage (VDD) | 1.1 V | — |
| I/O Supply Voltage (VDDQ) | 0.6 V (LPDDR4X) | — |
| 介面 | Parallel | DDR5 (Double Data Rate 5) |
| 封裝 | 200-TFBGA (10 x 14.5 mm) | FBGA (surface mount) |
| 安裝類型 | Surface Mount (BGA soldered) | Surface Mount |
| Technology | LPDDR4X LPDRAM | — |
| Speed Grade | -046 (2133 MHz class) | — |
| Temperature Grade (WT suffix) | [DATA_NEEDED: operating temperature range for WT grade] | — |
| Ball Count | 200 | [DATA_NEEDED: package ball count] |
| Package Dimensions | 10 mm x 14.5 mm | — |
| Low Power Modes | Self-refresh, deep power-down, DPD | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status from datasheet] | Compliant (per JLCPCB listing) |
| Supply Voltage (VDD) | — | [DATA_NEEDED: VDD nominal, expected 1.1 V per DDR5 JEDEC class] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support confirmation] |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range] |
| Refresh | — | [DATA_NEEDED: refresh scheme] |
| Generation | — | DDR5 |
| Manufacturer Part Status | — | In stock at multiple distributors |
| Typical Applications | — | Data storage, firmware boot, embedded logging, industrial controllers, computing modules |