NT5AD512M16 vs H5AN8G6NDJR-XNC 比較
詳細並排比較 NT5AD512M16 由 Nanya Technology 與 H5AN8G6NDJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5AD512M16 | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $55.68 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 組織 | 512M x 16 | — |
| Total Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (max 1.26 V) |
| 資料速率 | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| 封裝 | 96-ball FBGA | FBGA-96 (13x7.5 mm) |
| Operating Temperature (Commercial) | 0°C to +95°C | — |
| Operating Temperature (Industrial) | -40°C to +95°C | — |
| Auto Self-Refresh | Yes | Yes |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| Data Mask | Yes | Yes |
| Write Leveling | Yes | Yes |
| Dynamic On-Chip Termination | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| CRC Function | Yes | Yes |
| RoHS | Compliant | Compliant |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |