NT5CC256M16DP-DI vs IS43TR16256AL-125KBL 比較
詳細並排比較 NT5CC256M16DP-DI 由 Nanya Technology 與 IS43TR16256AL-125KBL 由 ISSI, Integrated Silicon Solution Inc. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ 啟用中規格比較
| 參數 | NT5CC256M16DP-DI | IS43TR16256AL-125KBL |
|---|---|---|
| 品牌 | Nanya Technology | ISSI, Integrated Silicon Solution Inc |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| 組織 | 256M x 16 | — |
| 供應電壓 | 1.35V | 1.35V (backward compatible to 1.5V) |
| 資料速率 | 1600 Mbps/pin (800MHz) | 1600 Mbps |
| 封裝 | VFBGA-96 | 96-TWBGA (9x13mm) |
| 工作溫度範圍 | -40°C to +95°C (industrial) | — |
| CAS 延遲 | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| 介面 | Differential clock (CK, CK#) | Parallel |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| 記憶體容量 | — | 4Gbit (256M x 16) |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| 安裝類型 | — | Surface Mount |
| 工作溫度 | — | 0°C ~ 95°C |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| RoHS 狀態 | — | Compliant |
| Number of Terminals | — | 96 |