NT5CC256M16DP-DI vs NT5CC256M16CP-DIB 比較
詳細並排比較 NT5CC256M16DP-DI 由 Nanya Technology 與 NT5CC256M16CP-DIB 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Nanya Technology
NT5CC256M16CP-DIB - 4Gb DDR3L SDRAM 256Mx16 | Nanya Technology
NT5CC256M16CP-DIB ✓ 啟用中規格比較
| 參數 | NT5CC256M16DP-DI | NT5CC256M16CP-DIB |
|---|---|---|
| 品牌 | Nanya Technology | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 供應電壓 | 1.35V | 1.35V |
| 資料速率 | 1600 Mbps/pin (800MHz) | 1600 Mbps (DDR3L-1600) |
| 封裝 | VFBGA-96 | TFBGA-96 (9x13mm, 0.8mm pitch) |
| 工作溫度範圍 | -40°C to +95°C (industrial) | — |
| CAS 延遲 | 11, 12, 13 (programmable) | — |
| Burst Length | 8, 4 (with burst chop) | — |
| Number of Banks | 8 | — |
| 介面 | Differential clock (CK, CK#) | — |
| Refresh | Auto-refresh and self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Number of Terminals | — | 96 |
| Internal Banks | — | 8 |
| Refresh Cycles | — | 8192 |
| CAS Latency (CL) | — | 5, 6, 7, 8, 9 |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| 無鹵素 | — | Yes |
| Package Shape | — | Rectangular |