PC28F640P30BF65B-TR vs PC28F640P30BF65B 比較

詳細並排比較 PC28F640P30BF65B-TR 由 Micron Technology 與 PC28F640P30BF65B 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
PC28F640P30BF65B-TR PC28F640P30BF65B-TR - 64Mb Parallel NOR Flash, 52MHz | Micron

PC28F640P30BF65B-TR - 64Mb Parallel NOR Flash, 52MHz | Micron

PC28F640P30BF65B-TR Nrnd

規格比較

參數 PC28F640P30BF65B-TR PC28F640P30BF65B
品牌 Micron Technology Micron Technology
類別 Memory ICs Memory ICs
生命週期狀態 NRND NRND
Density 64 Mbit (4M x 16) —
記憶體類型 Non-Volatile Flash (NOR) Non-Volatile FLASH - NOR (CFI)
Process Technology P30-65nm Axcell —
Boot Block Location Bottom —
Architecture 128 KB uniform blocks + 4 KB parameter blocks —
VCC (Core) Range 1.7 V to 2.0 V —
VCCQ (I/O) Range 1.7 V to 3.6 V —
介面 Parallel (asynchronous + synchronous burst) —
Synchronous Burst Frequency 52 MHz —
Asynchronous Access Time 65 ns (75 ns in some datasheet revisions) —
封裝 64-ball EasyBGA (10x13 mm) —
工作溫度 -40 C to +85 C -40C to +85C
Block Erase Time (typ.) 0.4 s —
Word Program Time (typ.) 100 us —
Endurance (per block) 100,000 cycles —
Data Retention 20 years (typical) —
Compliance RoHS —
記憶體容量 — 64 Mbit
Memory Organization — 4M x 16
資料匯流排寬度 — 16 bit (x16)
介面類型 — Parallel
Access Time — 65 ns
Burst Read Clock Frequency — 52 MHz
Write Cycle Time - Word, Page — 65 ns
Sector Architecture — Bottom Boot (parameter/small boot blocks at low addresses)
Supply Voltage - VCC — 1.7 V to 2.0 V
Supply Voltage - VCCQ (I/O) — [DATA_NEEDED: VCCQ range per P30 datasheet, typically 1.7V-3.6V]
封裝 / 外殼 — 64-EasyBGA (10x13 mm)
安裝類型 — Surface Mount
Program/Erase Endurance — [DATA_NEEDED: typical 100K cycles per sector per P30 datasheet]
RoHS 狀態 — [DATA_NEEDED: per latest Alliance/Micron PCN]
Lead-Free — [DATA_NEEDED]
MSL 等級 — [DATA_NEEDED: per EasyBGA JEDEC J-STD-020 rating]

資料表與資源

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