SI1553DL-T1-E3 vs SI1563DH-T1-E3 比較
詳細並排比較 SI1553DL-T1-E3 由 Vishay Intertechnology 與 SI1563DH-T1-E3 由 Vishay Intertechnology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Vishay Intertechnology
SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay
SI1553DL-T1-E3 ✓ 啟用中Vishay Intertechnology
SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay
SI1563DH-T1-E3 ✓ 啟用中規格比較
| 參數 | SI1553DL-T1-E3 | SI1563DH-T1-E3 |
|---|---|---|
| 品牌 | Vishay Intertechnology | Vishay Intertechnology |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Vishay Siliconix | — |
| Configuration | N-Channel + P-Channel (Complementary Pair) | Complementary N/P-Channel MOSFET array |
| Drain-Source Voltage (VDS) | 20 V | 20 V (N-channel and P-channel) |
| Gate-Source Voltage (VGS) | ±8 V | — |
| Continuous Drain Current N-Ch (ID) | 660 mA | — |
| Continuous Drain Current P-Ch (ID) | 410 mA | — |
| On-Resistance N-Ch (RDS(on)) | 5 Ω typical @ VGS = 2.5 V | — |
| On-Resistance P-Ch (RDS(on)) | [DATA_NEEDED: RDS(on) P-channel] | — |
| Gate Threshold Voltage (VGS(th)) | 0.9 V typical | — |
| Total Power Dissipation | 270 mW | — |
| 工作溫度範圍 | -55 °C to +150 °C | -55C to +150C (junction) |
| 封裝 | SC-70-6 (SOT-363 / SC-88) | SC-70-6 (SOT-363), 6 pins |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | TrenchFET | TrenchFET (Vishay Gen III) |
| Halogen-Free Option | Yes (per IEC 61249-2-21) | — |
| RoHS 狀態 | Compliant (RoHS Directive 2002/95/EC) | Compliant |
| Lead (Pb) Content | Lead-free (E3 suffix) | — |
| N-Channel Continuous Drain Current (ID) | — | 1.13 A |
| P-Channel Continuous Drain Current (ID) | — | 880 mA |
| Total Device Power Dissipation (PD) | — | 570 mW |
| Gate Threshold Type | — | Low-threshold (logic-level compatible) |
| Polarity | — | N-channel + P-channel (complementary pair) |
| Lead-Free | — | Yes (per Vishay ordering info) |
| 無鹵素 | — | Per ordering option Si1563DH-T1-GE3 |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |