SI1553DL-T1-E3 vs SI1563DH-T1-E3 비교

다음의 상세 나란히 비교: SI1553DL-T1-E3 제조: Vishay Intertechnology 및 SI1563DH-T1-E3 제조: Vishay Intertechnology. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Vishay Intertechnology
SI1553DL-T1-E3 SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay

SI1553DL-T1-E3 - 20V Complementary N/P MOSFET, SC-70-6 | Vishay

SI1553DL-T1-E3 ✓ 활성
Vishay Intertechnology
SI1563DH-T1-E3 SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay

SI1563DH-T1-E3 - 20V Complementary N/P MOSFET Array | Vishay

SI1563DH-T1-E3 ✓ 활성

사양 비교

파라미터 SI1553DL-T1-E3 SI1563DH-T1-E3
브랜드 Vishay Intertechnology Vishay Intertechnology
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.22 $0.29
Manufacturer Vishay Siliconix —
Configuration N-Channel + P-Channel (Complementary Pair) Complementary N/P-Channel MOSFET array
Drain-Source Voltage (VDS) 20 V 20 V (N-channel and P-channel)
Gate-Source Voltage (VGS) ±8 V —
Continuous Drain Current N-Ch (ID) 660 mA —
Continuous Drain Current P-Ch (ID) 410 mA —
On-Resistance N-Ch (RDS(on)) 5 Ω typical @ VGS = 2.5 V —
On-Resistance P-Ch (RDS(on)) [DATA_NEEDED: RDS(on) P-channel] —
Gate Threshold Voltage (VGS(th)) 0.9 V typical —
Total Power Dissipation 270 mW —
동작 온도 범위 -55 °C to +150 °C -55C to +150C (junction)
패키지 SC-70-6 (SOT-363 / SC-88) SC-70-6 (SOT-363), 6 pins
실장 유형 Surface Mount Surface Mount
Technology TrenchFET TrenchFET (Vishay Gen III)
Halogen-Free Option Yes (per IEC 61249-2-21) —
RoHS 상태 Compliant (RoHS Directive 2002/95/EC) Compliant
Lead (Pb) Content Lead-free (E3 suffix) —
N-Channel Continuous Drain Current (ID) — 1.13 A
P-Channel Continuous Drain Current (ID) — 880 mA
Total Device Power Dissipation (PD) — 570 mW
Gate Threshold Type — Low-threshold (logic-level compatible)
Polarity — N-channel + P-channel (complementary pair)
Lead-Free — Yes (per Vishay ordering info)
할로겐 프리 — Per ordering option Si1563DH-T1-GE3
MSL 레벨 — [DATA_NEEDED: MSL level]

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