SI1553DL-T1-GE3 vs BSD235CH6327XTSA1 比較

詳細並排比較 SI1553DL-T1-GE3 由 Vishay Intertechnology 與 BSD235CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Vishay Intertechnology
SI1553DL-T1-GE3 SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay

SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay

SI1553DL-T1-GE3 ✓ 啟用中

規格比較

參數 SI1553DL-T1-GE3 BSD235CH6327XTSA1
品牌 Vishay Intertechnology Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Vishay Siliconix Infineon Technologies
Part Number SI1553DL-T1-GE3 —
Transistor Polarity Complementary N and P Channel —
Number of Channels 2 (1 N-channel + 1 P-channel) —
Drain-Source Voltage VDS (max) 20 V —
Continuous Drain Current ID - N-Channel 700 mA —
Continuous Drain Current ID - P-Channel 500 mA —
On-Resistance RDS(on) - N-Channel 0.32 ohm (typ at VGS = 4.5 V) —
On-Resistance RDS(on) - P-Channel [DATA_NEEDED: P-channel RDS(on) value] —
Gate-Source Threshold VGS(th) 2.5 V (max) —
Gate-Source Voltage VGS (max) [DATA_NEEDED: +/- VGS absolute maximum] —
Power Dissipation PD 340 mW —
工作溫度範圍 -55C to +150C (TJ) -55 °C to +150 °C (junction)
封裝 SC-70-6 / SOT-363-6 —
安裝類型 Surface Mount Surface Mount
Process Technology TrenchFET —
Termination Finish Lead-free (Pb-free), Halogen-free —
RoHS Compliance Compliant per Directive 2002/95/EC —
無鹵素 Yes (per IEC 61249-2-21) —
MSL 等級 [DATA_NEEDED: MSL rating] 1
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Technology — OptiMOS™ low-voltage
Polarity — N-channel + P-channel
Channel Mode — Enhancement
RoHS 狀態 — Compliant (lead-free)
腳位數 — 6

資料表與資源

瀏覽所有產品 建立 BOM 索取報價