SM4036NHKP vs IRFH7084TRPBF 比較

詳細並排比較 SM4036NHKP 由 Sinopower Semiconductor 與 IRFH7084TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Sinopower Semiconductor
SM4036NHKP SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower

SM4036NHKP - 40V 80A N-Channel MOSFET, PDFN-8 | Sinopower

SM4036NHKP ✓ 啟用中
Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中

規格比較

參數 SM4036NHKP IRFH7084TRPBF
品牌 Sinopower Semiconductor Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 80 A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) in mOhm] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
封裝 PDFN-8 (DFN5x6) 5x6 mm 8-PQFN 5x6 mm (SuperSO8)
安裝類型 Surface Mount Surface Mount
Marking Code 4036NH —
工作溫度範圍 [DATA_NEEDED: junction temperature range] -55°C to +175°C (TJ)
Power Dissipation (PD) [DATA_NEEDED: PD max] —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Avalanche Rating Yes (per datasheet) —
MSL 等級 [DATA_NEEDED: MSL rating] 1
RoHS 狀態 Compliant (per Sinopower product page) Compliant
Lead-Free Yes —
FET Type — N-Channel
Technology — StrongIRFET™ (trench MOSFET)
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
無鹵素 — Compliant
RthJC max — 0.96 °C/W (per datasheet)

資料表與資源

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