TPD1E10B09DPYR vs TPD1E10B06DPYR 比較

詳細並排比較 TPD1E10B09DPYR 由 Texas Instruments 與 TPD1E10B06DPYR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
TPD1E10B09DPYR TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI

TPD1E10B09DPYR - 10pF, ±9V, ±20kV ESD Protection TVS in 0402 | TI

TPD1E10B09DPYR ✓ 啟用中
Texas Instruments
TPD1E10B06DPYR TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR ✓ 啟用中

規格比較

參數 TPD1E10B09DPYR TPD1E10B06DPYR
品牌 Texas Instruments Texas Instruments
類別 Surge Protectors Surge Protectors
生命週期狀態 啟用中 啟用中
Product Type Single-channel ESD protection TVS diode —
封裝 X1SON/0402 (DPY), 1.0 x 0.6 mm X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm
腳位數 2 —
安裝類型 Surface Mount Surface Mount
Working Voltage (VRWM) ±9 V —
Breakdown Voltage (VBR) ±6 V minimum (DC) —
Clamping Voltage 20 V at 4.5 A (8/20 µs) —
Peak Pulse Current 4.5 A (8/20 µs) —
Surge Rating 6 A (8/20 µs) —
Line Capacitance 10 pF (typical) 12 pF (typical)
Dynamic Resistance (RDYN) 0.37 Ω —
Leakage Current 0.5 µA maximum Ultra-low (nA range per datasheet)
ESD Protection (Air) ±30 kV (IEC 61000-4-2) —
ESD Protection (Contact) ±30 kV (IEC 61000-4-2) —
Channel Configuration Bidirectional (back-to-back) —
工作溫度 -40 C to +85 C -40 °C to +125 °C
RoHS 狀態 Compliant Compliant
MSL 等級 Level 3 Level 3 (per PartGenie summary)
Device Type — Single-channel ESD protection TVS diode
Polarity — Bidirectional (back-to-back TVS)
Working Voltage (Vrwm) — 5 V (typical); 14 V clamp at 5 A Ipp
DC Breakdown Voltage — ±6 V (minimum)
Peak Pulse Current (Ipp) — 5 A (8/20 µs)
ESD Contact Discharge — ±30 kV (IEC 61000-4-2)
ESD Air-Gap Discharge — ±30 kV (IEC 61000-4-2)
IO Capacitance — 10 pF (typical)
Dynamic Resistance (R_DYNAMIC) — 0.37 Ω
ESD Standard — IEC 61000-4-2 Level 4 (Air & Contact)

資料表與資源

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