2EDN7533RXTMA1 - Dual 5A Low-Side Gate Driver | Infineon
MPN： 2EDN7533RXTMA1 ✓ 啟用中2EDN7533RXTMA1 概覽
A low-side gate driver is a power-management IC that switches the gate of a low-side MOSFET or IGBT to ground, controlling its turn-on and turn-off from a low-voltage logic signal (typically 3.3 V or 5 V PWM). Within the system hierarchy, gate drivers sit between the controller IC (microcontroller, DSP, or PFC controller) and the power MOSFETs, providing the high peak currents needed to charge and discharge gate capacitances quickly. Low-side drivers in particular manage the lower switch in a half-bridge or the flyback/forward return switch, where the source/emitter is referenced to system ground. The 2EDN family from Infineon's EiceDRIVER portfolio is engineered for very low propagation delay, enabling hard-switched topologies up to several hundred kHz.
Key specifications include 5 A peak output current with 0.5 ohm typical output resistance (pull-up) and 0.3 ohm pull-down, 19 ns typical propagation delay, and an absolute maximum VDD of 25 V (recommended 4.5 V to 20 V). The device operates across -40 C to +150 C junction temperature and accepts LV-TTL logic inputs that tolerate -12 V to +22 V transients. The -R suffix in 2EDN7533R indicates inverting input polarity.
Architecturally, the 2EDN7533R uses matched CMOS output stages with independent UVLO comparators per channel, ensuring one rail can be brought up before the other without latch-up. The integrated bootstrap-free design (low-side only) simplifies PCB layout and eliminates the high-side level-shift losses found in half-bridge drivers.
Typical applications include synchronous-rectifier MOSFET driving in telecom and server DC-DC converters, Class-D audio amplifier output stages, motor-drive low-side switches, and high-frequency point-of-load (POL) converters. The dual independent channels also fit OR-ing FET control, low-side switches in digitally-controlled power, and housekeeping load switches.
When designing with this part, place the 100 nF VDD bypass capacitor within 2 mm of the IC and keep the gate-drive loop area below 0.5 cm to control ringing. The dual inverting topology requires non-overlap timing to be enforced by the controller; the 2EDN7533R itself does not include built-in dead-time generation.
直接替換替代品，適用於 2EDN7533RXTMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： 2EDN7533RXTMA1 （相同外形與佔位） — 差異在於 Package, Function, Operating Temperature Range, Input Logic Compatibility, Number of Drivers.
2EDN7533FXTMA1
✅ 直接替換📋 參考替代品（不在目錄中）
2EDN7524RXTMA1
✅ 直接替換📋 參考替代品（不在目錄中）
2EDN7434RXTMA1
✅ 直接替換聯絡詢價
查看資料表 →1EDN7136UXTSA1
✅ 直接替換聯絡詢價
查看資料表 →UCC27524PWR
✅ 直接替換📋 參考替代品（不在目錄中）
NCP81074DRGE
✅ 直接替換📋 參考替代品（不在目錄中）
2EDN7533RXTMA1 最大額定值與電氣特性
| 功能 | Dual-channel low-side gate driver |
| Number of Channels | 2 |
| Input Polarity | Inverting |
| Peak Source/Sink Output Current | 5 A |
| Output Resistance (Pull-up, typ.) | 0.5 ohm |
| Output Resistance (Pull-down, typ.) | 0.3 ohm |
| Propagation Delay (typ.) | 19 ns |
| Channel-to-Channel Delay Matching | 1.3 ns (typ.) |
| Rise/Fall Time | 1.7 ns / 1.5 ns (typ., 1 nF load) |
| Input Logic Compatibility | LV-TTL |
| Input Voltage Tolerance | -12 V to +22 V |
| Supply Voltage VDD (recommended) | 4.5 V to 20 V |
| Supply Voltage VDD (absolute max) | 25 V |
| Under-Voltage Lockout | Yes (per channel) |
| 工作接面溫度 | -40 C to +150 C |
| 封裝 | PG-TSSOP-8 (HTSSOP) with exposed pad |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
2EDN7533RXTMA1 腳位配置
| 腳位 1 | IN1 — Channel 1 input (inverting, LV-TTL) |
| 腳位 2 | GND — Ground (return for channel 1 output) |
| 腳位 3 | GND — Ground (return for channel 2 output) |
| 腳位 4 | IN2 — Channel 2 input (inverting, LV-TTL) |
| 腳位 5 | OUT2 — Channel 2 gate-drive output |
| 腳位 6 | VDD — Supply voltage (4.5 V to 20 V recommended) |
| 腳位 7 | OUT1 — Channel 1 gate-drive output |
| 腳位 8 | EPAD — Exposed thermal pad (connect to GND plane) |
典型應用
2EDN7533RXTMA1 適用於 6 應用s: Synchronous Rectifier Driving in DC-DC Converters, Class-D Audio Amplifier Output Stages, Motor Drive Low-Side Switching, Point-of-Load (POL) Converters, Telecom Isolated Brick Converters, LED Lighting Driver Switches.
Synchronous Rectifier Driving in DC-DC Converters
The 2EDN7533RXTMA1 is purpose-built for driving synchronous-rectifier MOSFETs in 12 V to 48 V isolated DC-DC bricks used in telecom and server power supplies. With 5 A peak source/sink current and 0.3 ohm pull-down resistance, it switches typical 30 V/40 V SR FETs in under 5 ns, minimizing body-diode conduction and improving converter efficiency by 0.5-1.5 percent at full load. The 1.3 ns channel-to-channel delay matching ensures both SR FETs in a parallel or push-pull configuration switch within nanoseconds of each other, eliminating shoot-through and timing-induced circulating currents.
推薦
Class-D Audio Amplifier Output Stages
The 2EDN7533RXTMA1 drives the low-side FETs of a half-bridge Class-D audio amplifier, where its 5 A peak current and 19 ns propagation delay preserve the PWM edge fidelity that defines audio quality. The fast rise/fall times (1.7 ns / 1.5 ns into 1 nF) keep the dead time contribution to under 20 ns, reducing THD to below 0.01 percent at 100 W output. The dual independent channels allow one IC to drive the left and right channels of a stereo amplifier, saving PCB area.
推薦
Motor Drive Low-Side Switching
In BLDC and stepper motor drives, the 2EDN7533RXTMA1 controls the low-side FETs in each half-bridge phase, providing 5 A peak gate drive that ensures clean switching at 50 kHz to 100 kHz PWM frequencies. The wide input tolerance (-12 V to +22 V) protects the driver when long gate-drive traces pick up motor switching noise. Two channels per IC allow a single device to handle a low-side-and-active-brake pair, halving the driver footprint on motor-control PCBs.
推薦
Point-of-Load (POL) Converters
For 12 V-input POL converters delivering 1 V to 5 V at 10 A to 30 A levels, the 2EDN7533RXTMA1 drives the synchronous FETs in the buck stage with switching frequencies from 500 kHz to 2 MHz. The 5 A peak current accelerates gate transitions even on high-Qg FETs (e.g. 30 nC), keeping switching losses below 2 percent of total power dissipation. The independent UVLO per channel enables sequential startup of multiple rails, essential for powering modern FPGAs and ASICs with specific power-up sequencing.
推薦
Telecom Isolated Brick Converters
In isolated 48 V-input telecom bricks, the 2EDN7533RXTMA1 drives the secondary-side synchronous rectifiers that recover energy to the 12 V output rail. Operating from a 9 V to 15 V secondary bias, the driver maintains full 5 A peak output down to VDD = 4.5 V. The 1.3 ns channel-to-channel matching prevents the imbalance that would otherwise create circulating currents across parallel SR stages, preserving the 97+ percent efficiency required by 80 PLUS Titanium telecom rectifiers.
推薦
LED Lighting Driver Switches
The 2EDN7533RXTMA1 is well suited to buck and boost LED drivers in commercial and automotive lighting, where it drives the low-side switch MOSFET at frequencies from 100 kHz to 1 MHz. Two channels can be paralleled to achieve 10 A peak for high-power LED strings. The LV-TTL inputs accept direct PWM dimming signals from a microcontroller, and the 1.3 ns matching keeps both channels in lock-step, ensuring uniform brightness across parallel LED strings.
推薦
推薦產品摘要
工程參考資料，適用於 2EDN7533RXTMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | 2EDN7533FXTMA1 | 2EDN7524RXTMA1 | 2EDN7434RXTMA1 | UCC27524PWR | NCP81074DRGE |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Texas Instruments | onsemi |
| Package | PG-TSSOP-8 | PG-TSSOP-8 (same) | PG-TSSOP-8 (same) | PG-TSSOP-8 (same) | TSSOP-8 (PW, same footprint) | TSSOP-8 / DFN-8 (same footprint) |
| Number of Channels | 2 | 2 | 2 | 2 | 2 | 2 |
| Peak Output Current | 5 A | 5 A | 5 A | 4 A | 5 A | 5 A |
| Propagation Delay (typ.) | 19 ns | 19 ns | 22 ns | 20 ns | 17 ns | 22 ns |
| Channel-to-Channel Matching | 1.3 ns | 1.3 ns | 5 ns | 2 ns | 5 ns | 4 ns |
| Pull-down Resistance | 0.3 ohm | 0.3 ohm | 0.4 ohm | 0.5 ohm | 0.5 ohm | 0.6 ohm |
| Input Polarity | Inverting | Non-inverting | Inverting | Inverting | Non-inverting | Non-inverting |
| VDD Range (recommended) | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 20 V | 4.5 V to 18 V | 4.5 V to 20 V |
| UVLO | Yes (per channel) | Yes (per channel) | Yes (per channel) | Yes (per channel) | Yes (per channel) | Yes (per channel) |
主要差異化特點
- Tightest channel-to-channel delay matching in its class (對比UCC27524PWR)
- Lower pull-down output resistance (對比NCP81074DRGE)
- Single IC replaces dual driver pair in compact designs (對比Single-channel 1EDN7136UXTSA1)
設計說明
Place a 100 nF X7R ceramic bypass capacitor within 2 mm of the 2EDN7533RXTMA1 VDD pin (pin 6). For high-frequency switching applications above 500 kHz, add a 1 uF X7R in parallel to suppress VDD droop during gate-charge transitions. Each 5 A peak output pulse can demand up to 1 A from VDD momentarily; insufficient decoupling causes the VDD rail to sag and UVLO to false-trigger. The exposed pad (pin 8) must be soldered to a ground copper pour of at least 100 mm^2 for thermal dissipation.
Keep the gate-drive loop area (OUTx to MOSFET gate and back through source to GND) below 0.5 cm^2 to minimize parasitic inductance. Estimated: at 5 A peak and 1 ns rise time, each nH of parasitic inductance causes an additional 5 V overshoot on the gate. Use 4 oz copper if possible on the gate-drive layer. Place the 2EDN7533RXTMA1 no more than 5 mm from the MOSFET gate pad; longer traces introduce R-L-C ringing visible on the gate-source waveform during turn-off.
Do not assume dead-time control - the 2EDN7533RXTMA1 has no built-in cross-conduction prevention, and dead time must come from the upstream PWM controller. Driving a half-bridge with two channels of this IC requires the controller to enforce at least 20 ns of dead time to prevent shoot-through. Also, do not exceed the absolute maximum input voltage of 22 V on the INx pins even momentarily; the input stage can latch up if overdriven. Finally, do not use the NC/exposed-pad pin 8 as a signal - it is thermally bonded to the substrate and must be tied to GND.
The PG-TSSOP-8 package has a theta_JA of approximately 50 C/W on a standard JEDEC 4-layer test board, but rises to 90 C/W on a single-layer 1 oz board. Estimated: at 5 A peak with 20 kHz switching and 100 nC FET gate charge, the 2EDN7533RXTMA1 dissipates roughly 30 mW from VDD quiescent plus 200 mW from gate-charge losses, yielding junction-to-ambient rise under 15 C - negligible. However, in a synchronous rectifier driving a 40 V FET at 1 MHz, gate-charge losses can reach 800 mW; ensure the exposed pad is bonded to at least 50 mm^2 of copper.
Use a series gate resistor (typically 2.2 ohm to 10 ohm) between the 2EDN7533RXTMA1 OUTx pin and the MOSFET gate to dampen ringing caused by the trace inductance and FET input capacitance. With 0.3 ohm pull-down and 4.7 ohm external gate resistor, the effective gate-source impedance at turn-off is well damped. Add a 100 kohm pull-down on each OUTx pin if the IC is unpowered - otherwise, an unpowered 2EDN7533RXTMA1 can float its output and partially turn on the FET through its internal ESD diodes.
合規資訊
Industrial-grade part per Infineon datasheet. AEC-Q100 grade 1 qualified equivalent available as 2EDN7533RXUMA1 for automotive designs. RoHS and REACH compliant per Infineon product environmental compliance statements.
