EP3SE260H780C3 - Stratix III E FPGA 255K LE, 488 I/O | Intel
MPN： EP3SE260H780C3 ✓ 啟用中EP3SE260H780C3 概覽
An FPGA (Field Programmable Gate Array) is a semiconductor device built around an array of configurable logic blocks (CLBs/LABs), programmable interconnect, and I/O cells that can be re-programmed after manufacture. Within the broader integrated circuit taxonomy, FPGAs sit between fixed-function ASICs (application-specific, lowest per-unit cost at volume) and software-driven processors (most flexible but lower throughput per watt). High-density Stratix III E devices bridge the gap by offering ASIC-class compute density while retaining FPGA reprogrammability, making them ideal for evolving standards and prototype-to-production workflows.
Key features include 255K logic elements with dedicated DSP blocks, embedded memory totaling 16.67 Mbit, 488 user I/Os supporting LVDS, LVCMOS, HSTL, and SSTL standards, and a 780-ball flip-chip BGA package for high signal density. The Stratix III Enhanced family adds hardened floating-point and variable-precision DSP support and additional transceers versus baseline Stratix III, supporting high-speed serial protocols. Embedded PLLs and clock networks enable multiple domain clocking at frequencies up to 500 MHz core operation. Reliability features include hot-socketing support, on-chip termination, and built-in CRC verification of configuration memory.
Architecturally, the EP3SE260H780C3 combines a fine-grained logic fabric with hard IP blocks for memory, DSP, and transceivers, with Altera/Intel Quartus II design software support for synthesis, place-and-route, and timing closure. The 65 nm CMOS process balances density and static power, with speed-grade "C3" indicating the device's static-timing corner and supported toggle rates.
Typical applications include high-end ASIC prototyping, wireless baseband DSP pipelines, high-throughput image and signal processing, military communications, test and measurement instrumentation, and high-speed data acquisition. The Stratix III E family is well-suited to designs that require both high logic density and large I/O counts in a single package.
When designing with this device, ensure the PCB can handle the 780-ball flip-chip BGA land pattern with proper microvia or via-in-pad stack-ups for signal integrity. Plan thermal management using the thermal-resistance metrics in the device handbook, and validate configuration schemes (fast passive parallel, JTAG, or active serial) against system bring-up requirements.
This page synthesizes distributor availability, drop-in same-family Stratix III E alternatives, design notes, and parametric context not collected in any single distributor listing - giving engineers a one-stop engineering summary for the EP3SE260H780C3.
直接替換替代品，適用於 EP3SE260H780C3 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： EP3SE260H780C3 （相同外形與佔位） — 差異在於 Package, Speed Grade, Core Voltage, RoHS Status, Operating Temperature.
EP3SE260H780C3N
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE260H780C2
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE260H780C2N
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE260H780I4N
✅ 直接替換聯絡詢價
查看資料表 →EP3SE260F1152C3
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →EP3SE260H780C3 最大額定值與電氣特性
| Device Family | Stratix III Enhanced (Stratix III E) |
| Series | EP3SE |
| Logic Elements | 255,000 |
| Logic Array Blocks (LABs) | 10200 |
| Embedded Memory | 16,672,768 bits (16.67 Mbit) |
| User I/Os | 488 |
| Operating Voltage (Core) | 0.9 V |
| Operating Voltage (Auxiliary) | 1.1 V |
| Process Technology | 65 nm CMOS |
| Speed Grade | C3 |
| 工作溫度 | Commercial, 0C to +85C |
| Maximum Core Frequency | 500 MHz |
| 封裝 | 780-ball FCBGA (HBGA), flip-chip |
| 安裝類型 | Surface Mount (BGA) |
| 濕度敏感等級 (MSL) | 3 (168 hours) |
| Packaging Type | Tray |
| Configuration Memory Support | Fast passive parallel, JTAG, Active Serial |
| RoHS 狀態 | Compliant (per product listings) |
EP3SE260H780C3 腳位配置
| 腳位 1 | I/O Bank — User I/O pin, bank assignment per Stratix III handbook |
| 腳位 2 | I/O Bank — User I/O pin, bank assignment per Stratix III handbook |
| 腳位 3 | VCCIO — I/O supply voltage per bank |
| 腳位 4 | GND — Ground |
| 腳位 5 | VCC — Core supply voltage (0.9 V nominal) |
| 腳位 6 | VCCAUX — Auxiliary supply voltage (1.1 V nominal) |
| 腳位 7 | I/O Bank — User I/O pin, bank assignment per Stratix III handbook |
| 腳位 8 | I/O Bank — User I/O pin, bank assignment per Stratix III handbook |
| 腳位 9 | GND — Ground |
| 腳位 10 | I/O Bank — User I/O pin, bank assignment per Stratix III handbook |
典型應用
EP3SE260H780C3 適用於 6 應用s: ASIC Prototyping and Pre-Silicon Validation, Wireless Baseband DSP Pipeline, High-Speed Image and Signal Processing, Test and Measurement Instrumentation, Military Communications and Secure Networking, High-Throughput Data Acquisition and Storage.
ASIC Prototyping and Pre-Silicon Validation
The EP3SE260H780C3's 255,000 logic elements and 16.67 Mbit of embedded memory provide ASIC-class logic density for pre-silicon validation of large SoC designs. Engineers map RTL from Verilog/VHDL to the Stratix III E fabric using Quartus II synthesis and incremental place-and-route, achieving timing closure on multi-million-gate ASICs while preserving the flexibility to iterate quickly. The 488 user I/Os enable test harnesses and debug instrumentation connectivity, and the C3 speed grade supports representative ASIC clock rates up to 500 MHz, making it ideal for ASIC validation in compute, networking, and storage designs.
推薦
Wireless Baseband DSP Pipeline
Stratix III Enhanced devices include hardened DSP blocks and variable-precision multipliers that map directly to baseband DSP pipelines in wireless infrastructure such as LTE and 5G NR PHY layers. The EP3SE260H780C3's 255K logic elements combined with embedded multipliers can implement channel estimation, FFT/iFFT, and MIMO decoder blocks at line rate, while the 488 I/Os interface to analog front ends, JESD204B ADCs/DACs, and backhaul SERDES links. The 65 nm process and C3 speed grade balance high DSP throughput with manageable dynamic power, suiting base station and small-cell baseband implementations.
推薦
High-Speed Image and Signal Processing
Defense, medical imaging, and machine-vision systems leverage the EP3SE260H780C3 to process multi-giga-sample-per-second data streams in parallel. With 10200 LABs and 16.67 Mbit of embedded memory, the device can host multi-stage filter pipelines, image warping, and FFT-based processing for SAR radar, ultrasound beamforming, and surveillance video analytics. The 488 I/Os distribute pixel and clock signals to LVDS Camera Link or CoaXPress front ends, and the C3 speed grade sustains 500 MHz fabric clocking for real-time throughput across multi-megapixel arrays.
推薦
Test and Measurement Instrumentation
Modular instruments such as protocol analyzers, arbitrary waveform generators, and digital storage oscilloscopes leverage the EP3SE260H780C3's high logic density and I/O count to handle multiple concurrent channels of signal acquisition, pattern generation, and real-time protocol decoding. The 488 I/Os support LVDS trigger buses and parallel DAC/ADC interfaces up to multi-GHz effective sample rates, while Quartus II IP libraries accelerate PCIe Gen2, Ethernet MAC, and JTAG boundary-scan functions. The Stratix III E family is a long-standing reference platform for high-channel-count ATE and benchtop instrument designs.
推薦
Military Communications and Secure Networking
Software-defined radio (SDR) and tactical networking platforms use the EP3SE260H780C3 to implement waveform-specific modem blocks, encryption accelerators, and protocol stacks in a single reprogrammable device. With 255K LE and 488 I/Os, the FPGA supports multiple independent radio chains with concurrent encryption and routing functions. The 780-ball FCBGA package's mechanical robustness suits ruggedized enclosures used in airborne, naval, and vehicular platforms; combined with Quartus II design flow, it allows rapid waveform portability across product generations.
推薦
High-Throughput Data Acquisition and Storage
Servers, storage arrays, and high-speed recorders use the EP3SE260H780C3 to bridge multi-channel ADC lanes to host PCIe Gen2 and 10 GbE fabrics. The 255K LE fabric is large enough to host forward error correction (FEC), encryption, and de-fragmentation pipelines for SAS/SATA/NVMe bridges and high-channel-count digitizers. With 488 I/Os, the device supports DDR3 memory controllers and multi-port 10G Ethernet MACs simultaneously, while the C3 speed grade sustains timing closure at 250 MHz PHY rates.
推薦
推薦產品摘要
工程參考資料，適用於 EP3SE260H780C3 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | EP3SE260H780C3N | EP3SE260H780C2 | EP3SE260H780C2N | EP3SE260H780I4N | EP3SE260F1152C3 |
|---|---|---|---|---|---|---|
| Brand | Intel | Intel - same | Intel - same | Intel - same | Intel - same | Intel - same |
| Package | 780-ball FCBGA (HBGA) | 780-ball FCBGA (HBGA) - same | 780-ball FCBGA (HBGA) - same | 780-ball FCBGA (HBGA) - same | 780-ball FCBGA (HBGA) - same | 1152-ball FCBGA (HBGA) - different |
| Logic Elements | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 | 255,000 |
| Speed Grade | C3 | C3 | C2 (slower) | C2 (slower) | I4N (industrial) | C3 |
| Temperature Grade | Commercial (0C to +85C) | Commercial | Commercial | Commercial | Industrial (-40C to +100C) | Commercial |
| Embedded Memory | 16.67 Mbit | 16.67 Mbit | 16.67 Mbit | 16.67 Mbit | 16.67 Mbit | 16.67 Mbit |
| User I/Os | 488 | 488 | 488 | 488 | 488 | Higher (FPGA fabric I/O ~900+ in 1152-ball) |
| Process / Family | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E | 65 nm / Stratix III E |
主要差異化特點
- 255K LE silicon density in a compact 780-ball BGA (對比EP3SE260F1517C3 (1517-ball BGA))
- Highest speed grade in 780-ball form factor (對比EP3SE260H780C2 (C2 speed grade))
- Stratix III E Enhanced DSP and floating-point hard IP (對比Stratix III baseline (non-Enhanced) variants)
設計說明
Estimated: at 0.9 V core and 500 MHz operation, the EP3SE260H780C3 can dissipate significant dynamic power (typically 5-10 W depending on utilization). With a flip-chip BGA junction-to-ambient thermal resistance around 8-12 C/W under still air, a heat sink or forced-air cooling is required when utilization exceeds 60-70%. Refer to the Stratix III device handbook for thermal models and AN 358 application note for cooling recommendations; perform in-system thermal measurement before finalizing chassis airflow.
Use microvia or via-in-pad PCB technology for the 780-ball FCBGA land pattern. Match the recommended BGA ball-pitch footprints from the manufacturer PCB footprint files; deviations risk solder joint reliability issues. Maintain solid GND and VCC planes directly under the BGA, and route differential pairs (LVDS) with controlled 100 ohm differential impedance. Consider PCB laminate with low Df (e.g., high-grade FR4 or Nelco) for signals above 1 Gbps.
Do not assume pin assignments without consulting the latest Stratix III pin tables in the device handbook - bank assignments may differ between HBGA pin count variants. Verify the configuration scheme (JTAG, fast passive parallel, active serial) before PCB design: configuration pin pull-ups and PROM footprint must be planned early. Quartus II software versions matter for timing closure; pinout re-mapped versions occasionally require recompiling your design with the latest device service packs.
For LVDS and HSTL interfaces used in this device, apply proper termination per the Stratix III device handbook (typical 100 ohm differential with on-chip termination where applicable). Use IBIS models for SI simulation of multi-GHz interfaces. Maintain matched trace lengths within a pair and within a bus (skew budget per the standard), and route high-speed signals on inner PCB layers with reference ground planes on adjacent layers.
合規資訊
RoHS status confirmed by distributor product listings; MSL 3 (168 hours) per manufacturer packaging data. AEC-Q100 not applicable (this is an FPGA IC, not an automotive-grade discrete). Halogen-free status not explicitly listed in source data - mark as unknown.
