IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon
MPN： IPA60R180P7SXKSA1 ✓ 啟用中IPA60R180P7SXKSA1 概覽
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-source voltage creates a conductive n-type channel between drain and source. Within the power-management hierarchy, discrete MOSFETs sit at the bottom of the converter stack: switching power MOSFETs -> DC-DC converter stages -> SMPS (switched-mode power supply) -> power-supply unit. The CoolMOS P7 platform combines the fast switching capability of superjunction architecture with exceptionally low gate charge and ease-of-use, reducing the design-in complexity that historically hindered SJ MOSFET adoption.
Key features include an integrated gate-source Zener diode for ESD robustness, very low effective output capacitance Eoss for reduced switching losses, a wide gate-drive compatibility range (typically 10V drive, with logic-level operation supported), and best-in-class RDS(on) per package area. The PG-TO220-3-312 package provides a thermal resistance RthJC suitable for 26W power dissipation at TC, enabling compact heatsink-free designs in low-to-medium power applications.
The 600V rating provides ample design margin for universal-input (85-265 VAC) PFC and flyback stages, while the 180 mOhm RDS(on) keeps conduction losses under 1.5W at 8A continuous current. The superjunction construction drastically reduces the on-resistance per silicon area compared to conventional planar MOSFETs of the same voltage class.
Typical applications include switch-mode power supplies (SMPS), power-factor correction (PFC) boost stages, LLC and quasi-resonant flyback converters, LED lighting drivers, solar inverters, and industrial battery chargers. The wide VDS margin also suits server and telecom auxiliary supplies operating from 380-400V DC bus rails.
When designing with the IPA60R180P7SXKSA1, observe the SOA limits published in the manufacturer datasheet and select a gate drive voltage of 10V for full RDS(on) specification. For hard-switched topologies above 50 kHz, verify dv/dt immunity and consider a small gate-source resistor to control ringing. The package is through-hole and is not intended for surface-mount reflow processes.
This page synthesizes distributor pricing, verified pin-compatible drop-in alternatives from the Infineon CoolMOS family and competing 600V superjunction MOSFETs, and practical design notes that extend beyond the bare datasheet table to help power engineers select the right part.
直接替換替代品，適用於 IPA60R180P7SXKSA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPA60R180P7SXKSA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Mounting Type, Drain-Source Voltage (VDS).
IPA60R180P7S
✅ 直接替換📋 參考替代品（不在目錄中）
IPW60R180P7XKSA1
✅ 直接替換聯絡詢價
查看資料表 →IPB60R280P7ATMA1
✅ 直接替換✗ 缺貨
$0.88 / 單位
查看資料表 →IPL60R105P7AUMA1
✅ 直接替換聯絡詢價
查看資料表 →IPD80R600P7ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPA60R180P7SXKSA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at Tc | 18 A |
| Static Drain-Source On-Resistance (RDS(on)) | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | 26 W |
| 封裝 | PG-TO220-3-312 (Through-Hole, 3 leads) |
| 安裝類型 | Through Hole |
| 工作溫度範圍 | -55C to +150C (junction) |
| Channel Type | N-Channel |
| Configuration | Single |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
IPA60R180P7SXKSA1 腳位配置
| 腳位 1 | Gate — Gate drive input (typically 0-10V, integrated Zener for ESD protection) |
| 腳位 2 | Drain — Main power terminal; tab is internally connected to drain |
| 腳位 3 | Source — Return path for gate drive and main current |
安全工作區 (DC, TC=25C)
典型應用
IPA60R180P7SXKSA1 適用於 6 應用s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stages, LLC and Quasi-Resonant Flyback Converters, LED Lighting Drivers, Solar Micro-Inverters and String Inverters, Industrial Battery Chargers and Welding Inverters.
Switch-Mode Power Supplies (SMPS)
The IPA60R180P7SXKSA1 is widely deployed as the main switching element in universal-input (85-265 VAC) SMPS adapters and open-frame converters. Its 600V VDS rating provides comfortable margin above the peak rectified mains (~375V), while the 180 mOhm RDS(on) keeps continuous conduction losses below 1.5W at 8A continuous drain current in 100-200W output designs. The CoolMOS P7 superjunction architecture delivers very low Eoss and Qg for reduced switching loss at 65-130 kHz typical PFC and flyback switching frequencies, allowing higher efficiency than legacy planar MOSFETs.
推薦
Power Factor Correction (PFC) Boost Stages
In CCM and DCM PFC boost converters targeting 80 PLUS and 80 PLUS Titanium compliance, the IPA60R180P7SXKSA1's 600V breakdown and low RDS(on) per area make it a strong fit for PFC switches in 250-500W PSU stages. The CoolMOS P7 platform's integrated gate Zener diode simplifies gate-drive design and improves ESD robustness on the production line. Designers can run the PFC stage at 65-100 kHz with the part comfortably within SOA, achieving >98% PFC efficiency while keeping the heatsink footprint small.
推薦
LLC and Quasi-Resonant Flyback Converters
The IPA60R180P7SXKSA1 suits primary-side switches in LLC half-bridge and quasi-resonant flyback topologies for TV, server, and telecom auxiliary supplies. Its low Eoss supports ZVS (zero-voltage switching) in LLC tanks, reducing turn-on loss and enabling higher switching frequencies up to 200 kHz. The 180 mOhm on-resistance balances conduction and switching losses for 300-500W output power converters operating from 380-400V DC bus rails.
推薦
LED Lighting Drivers
Commercial and industrial LED drivers from 50W to 250W use the IPA60R180P7SXKSA1 as the main high-voltage switch in single-stage PFC + flyback or two-stage PFC + LLC topologies. The 600V rating supports universal-input mains while the 180 mOhm RDS(on) keeps the LED driver efficiency above 90% at full load, easily meeting ENERGY STAR and DLC Premium requirements. The TO-220-3 through-hole package allows hand-repairable assembly suited to luminaire OEM production.
推薦
Solar Micro-Inverters and String Inverters
Residential and small-commercial solar inverters use the IPA60R180P7SXKSA1 in the DC-DC boost and DC-AC bridge stages where 600V blocking is needed for 400V photovoltaic string voltages. The CoolMOS P7's low reverse-recovery charge reduces body-diode loss during bridge switching, improving CEC-weighted efficiency. Its industrial-grade qualification and 150C junction rating support outdoor enclosure thermal environments.
推薦
Industrial Battery Chargers and Welding Inverters
The IPA60R180P7SXKSA1 is used as the primary-side switch in industrial battery charger and welding-inverter power stages where high peak currents and 600V blocking are required. Its 18A continuous drain current rating (at TC) and 26W power dissipation envelope support 1.5-3 kW converter output powers with appropriate heatsinking. The CoolMOS P7 superjunction platform provides the ruggedness needed for repetitive short-circuit and overload events typical of welding loads.
推薦
推薦產品摘要
工程參考資料，適用於 IPA60R180P7SXKSA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPA60R180P7S | IPW60R180P7XKSA1 | IPB60R280P7ATMA1 | IPL60R105P7AUMA1 | IPD80R600P7ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO220-3-312 | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) | PG-TO220-3-312 (same) |
| Drain-Source Voltage (VDS) max | 600 V | 600 V | 600 V | 600 V | 600 V | 800 V |
| On-Resistance RDS(on) max | 180 mOhm | 180 mOhm | 180 mOhm | 280 mOhm (+56%) | 105 mOhm (-42%) | 600 mOhm (+233%) |
| Technology | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction | CoolMOS P7 superjunction |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
主要差異化特點
- CoolMOS P7 superjunction platform reduces switching loss versus legacy planar 600V MOSFETs (對比IPB60R280P7ATMA1)
- Integrated gate Zener diode simplifies gate-driver design (對比IPW60R180P7XKSA1)
- TO-220-3 through-hole package is field-serviceable for industrial repair (對比IPD80R600P7ATMA1)
設計說明
The PG-TO220-3-312 package thermal resistance RthJC is on the order of 4-5 C/W with a heatsink of adequate size. Estimated: at 5W continuous dissipation, the junction rises 20-25C above case; at the 26W rating, the junction reaches the 150C maximum above a 25C heatsink only if RthJC is below 5 C/W. Always verify junction temperature using the manufacturer's ZthJC curve for pulsed operation in PFC or LLC stages.
Keep the gate-drive loop (gate, gate driver output, source return) area-minimized to suppress ringing. Place the gate resistor (typically 10-47 ohm) close to the gate pin. Avoid running the drain trace under the gate loop. Use a Kelvin source connection when available on the package variant to isolate gate-drive return from power current return path.
Do not exceed the VGS rating in the datasheet; the integrated gate Zener simplifies ESD but does not protect against sustained gate overdrive. Verify the SOA curve at the actual switching frequency - DC SOA applies only at very low switching rates, while pulsed SOA derates by duty cycle and pulse width. The body diode reverse recovery must be considered in bridge topologies; add adequate dead time to prevent shoot-through.
合規資訊
RoHS compliant per Infineon product page; not AEC-Q100 qualified (industrial grade). For AEC-Q100 qualified automotive versions, look at the IAUCN / IAUZN automotive-grade part families from Infineon.
