IPB031N08N5ATMA1 - 80V 120A OptiMOS 5 N-Channel MOSFET | Infineon
MPN： IPB031N08N5ATMA1 ✓ 啟用中IPB031N08N5ATMA1 概覽
A power MOSFET is a voltage-controlled semiconductor switch that converts an input gate-source voltage into a low-resistance conduction path between drain and source. Within the broader taxonomy it sits as a member of the discrete MOSFET family, itself a subset of power transistors and ultimately the discrete semiconductor category. OptiMOS 5 is Infineon's fifth-generation trench MOSFET platform, optimized for low RDS(on) per unit silicon area, low gate charge (Qg), and low Figure-of-Merit (FOM = RDS(on) x Qg) to minimize both conduction and switching losses.
Key performance highlights include a maximum RDS(on) of 3.1 mOhm, a 120A continuous drain rating (Tc), and a 167W power dissipation envelope (Tc). Compared to the previous generation, Infineon quotes a 43% RDS(on) reduction for the OptiMOS 5 80V family, which translates directly into lower conduction loss and higher efficiency in high-current loops. The D2PAK surface-mount package exposes the metal tab for direct PCB heatsink soldering, giving a low thermal resistance path from junction to copper.
Architecturally the device uses Infineon's latest trench cell design, which shrinks the per-cell on-resistance without sacrificing ruggedness. The low RDS(on) x Qg figure-of-merit is critical for hard-switched topologies such as buck and totem-pole PFC, where switching loss at the high di/dt edge dominates total dissipation. The 80V rating provides sufficient margin for 48V nominal telecom rails (with transients) and 24V industrial supplies, while the low Rds(on) makes the part attractive for OR-ing, hot-swap, and synchronous rectifier stages.
Typical applications include 48V telecom and server power supplies, synchronous rectification in isolated DC-DC converters, hot-swap and OR-ing FETs in redundant -48V/-54V systems, high-current motor drive bridges for industrial automation, and automotive 12V/24V/48V load switching. It is also widely used as the low-side switch in half-bridge and full-bridge converters where its low Qg reduces driver losses.
Designers should select the gate-drive voltage carefully: typical VGS(th) is in the 2-3V range, so a 10V drive is recommended for full enhancement and minimum RDS(on). The exposed D2PAK tab must be soldered to a sufficiently large copper pour (typically >=1 oz copper, >=1 sq inch) to keep thermal resistance low; otherwise the 167W Tc rating cannot be realized at reasonable ambient temperatures.
This page synthesizes distributor pricing, parametric comparisons, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, giving engineers a one-stop reference for sourcing and qualifying the IPB031N08N5ATMA1.
直接替換替代品，適用於 IPB031N08N5ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPB031N08N5ATMA1 （相同外形與佔位） — 差異在於 Technology, MSL Level, Operating Temperature Range, Package, RoHS Status.
IPB031N08N5
✅ 直接替換📋 參考替代品（不在目錄中）
IPD046N08N5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPB031N08N5ATMA1 最大額定值與電氣特性
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) | 120 A (Tc) |
| Power Dissipation (PD) Max | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | 3.1 mOhm (VGS=10V) |
| 工作溫度範圍 | -55 C to +175 C |
| 封裝 | PG-TO263-3 (D2PAK) |
| 安裝類型 | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | Drain (electrically connected to pin) |
| RoHS 狀態 | Compliant |
| Automotive Qualified | Yes (per Arrow listing) |
IPB031N08N5ATMA1 腳位配置
| 腳位 1 | Gate (G) — Gate input - apply VGS=10V typical for full enhancement |
| 腳位 2 | Drain (D) — Drain connection - also electrically bonded to metal tab |
| 腳位 3 | Source (S) — Source connection - reference for gate drive |
| 腳位 Tab | Drain (D) — Metal tab - solder to PCB copper for thermal dissipation; internally connected to Drain |
安全工作區 (SOA)
典型應用
IPB031N08N5ATMA1 適用於 6 應用s: 48V Telecom and Server Power Supplies, Synchronous Rectification in Isolated DC-DC Converters, Hot-Swap and OR-ing FETs in Redundant Systems, Automotive 12V/24V/48V Load Switching, Industrial Motor Drive Bridges, High-Current Buck and Boost Converters.
48V Telecom and Server Power Supplies
The IPB031N08N5ATMA1's 80V VDS rating and 3.1 mOhm RDS(on) make it ideal for 48V telecom and server primary-side switching where efficiency at high current directly impacts operating cost. In a typical 48V-to-12V isolated DC-DC converter, this device functions as the synchronous rectifier on the secondary, replacing Schottky diodes and saving 3-5% system efficiency at full load. The 120A Tc rating provides substantial margin above the 60-80A typical operating current, reducing junction temperature and extending MTBF.
推薦
Synchronous Rectification in Isolated DC-DC Converters
Used as the secondary-side synchronous rectifier MOSFET, the IPB031N08N5ATMA1 replaces Schottky diodes in forward, full-bridge, and LLC converters operating from 48V or 24V input rails. Its 3.1 mOhm RDS(on) at VGS=10V minimizes conduction loss at the high secondary currents typical of high-density DC-DC modules. The low Qg of OptiMOS 5 keeps gate-drive losses minimal at switching frequencies of 100-300 kHz, where most modern isolated converters operate.
推薦
Hot-Swap and OR-ing FETs in Redundant Systems
In N+1 redundant -48V server and telecom power systems, the IPB031N08N5ATMA1 serves as the hot-swap or OR-ing MOSFET, isolating failed modules without disrupting the live bus. Its 80V rating provides comfortable margin above the 48V nominal plus transients, while the 3.1 mOhm RDS(on) keeps steady-state dissipation low even at 80-100A continuous load. The D2PAK package supports the thermal demands of continuous current flow during normal operation.
推薦
Automotive 12V/24V/48V Load Switching
With automotive qualification and 80V VDS rating, the IPB031N08N5ATMA1 is well-suited to automotive load switching, ECU power distribution, and 48V mild-hybrid applications. The device handles 12V and 24V body electronics comfortably with vast margin, and supports 48V mild-hybrid rails where load-dump transients can reach 60V+. The D2PAK package survives the harsh automotive thermal environment (-40C to +125C ambient typical) when properly heatsunk.
推薦
Industrial Motor Drive Bridges
In industrial brushless DC and stepper motor drives operating from 24V-48V supplies, the IPB031N08N5ATMA1 functions as the low-side switch in three-phase half-bridge inverters. Its 120A continuous rating handles the inrush currents of large motors, while the 3.1 mOhm RDS(on) keeps conduction loss acceptable at the high duty cycles typical of PWM motor control. Pair with a dedicated gate driver IC for optimal switching performance.
推薦
High-Current Buck and Boost Converters
In non-isolated buck and boost converters for industrial, solar, and battery-powered applications, the IPB031N08N5ATMA1 acts as the main switching element or synchronous rectifier at currents of 50-100A. Its 80V rating covers most 24V-48V system rails, while the 3.1 mOhm RDS(on) delivers high efficiency at high duty cycles. The D2PAK footprint is one of the most widely supported by off-the-shelf DC-DC converter reference designs from major controller IC vendors.
推薦
推薦產品摘要
工程參考資料，適用於 IPB031N08N5ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPB031N08N5 | IPD046N08N5ATMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS Max | 80 V | 80 V | 80 V |
| RDS(on) Max @ VGS=10V | 3.1 mOhm | 3.1 mOhm | 4.6 mOhm |
| Technology | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 80V |
| Packaging | Tape & Reel (-ATMA1) | Tray/Bulk | Tape & Reel (-ATMA1) |
主要差異化特點
- 43% lower RDS(on) vs previous OptiMOS generation (對比Infineon OptiMOS 3 (BSC...))
- Same D2PAK footprint as previous generation (對比BSC014N04LSATMA1 (40V SuperSO8 alternative))
- 120A continuous current rating at Tc (對比IPD046N08N5ATMA1)
設計說明
Estimated: at 50A continuous load with RDS(on)=3.1 mOhm, conduction loss = I^2 x RDS(on) = 7.75W. The D2PAK package's theta_JC is approximately 1.0 C/W, but the realistic junction-to-ambient thermal resistance depends heavily on PCB copper area - with a 1 sq inch 1 oz copper pour, theta_JA is roughly 50 C/W, yielding a 387C junction temperature rise which exceeds the 175C maximum. Active cooling or at least 4-6 sq inch of 2 oz copper is recommended to handle >30A continuous without active cooling. Always derate to 50-60% of the absolute ID max rating for reliability.
Solder the metal tab to a substantial copper pour - recommended minimum is 1 sq inch of 2 oz copper for 30-50A continuous operation. Use thermal vias (0.3mm diameter, 1mm pitch) under the tab to connect top-side copper to internal ground planes and bottom-side heatsink copper. Keep high-current drain/source traces wide (>=5mm per 10A) and minimize the high-current loop area to reduce stray inductance, which is critical for hard-switched topologies.
Place the gate-drive circuitry within 20mm of the gate pin to minimize gate-loop inductance - high gate-loop inductance causes ringing, false triggering, and increased switching loss. Use a dedicated gate-drive resistor (typically 4.7-22 ohm) close to the gate pin, and consider a small ferrite bead or 100 ohm series resistor if ringing persists. Keep the gate-driver ground return path directly to the MOSFET source pin, not to a remote ground.
Do not exceed VGS=+/-20V - gate oxide breakdown is permanent. Add a 10k ohm gate-source resistor to prevent false turn-on from dv/dt coupling when the MOSFET is off. Avoid operating the part in linear mode for extended periods - this part is optimized for switching applications, not linear regulation. Verify avalanche energy rating for any application where unclamped inductive switching (UIS) is possible.
合規資訊
RoHS compliant per Infineon product page. AEC-Q100 qualified per Arrow listing which describes the part as 'Automotive'. Lead-free (Pb-free) reflow soldering compatible.
