IPB031N08N5ATMA1 - 80V 120A OptiMOS 5 N-Channel MOSFET | Infineon
MPN: IPB031N08N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.65 | $4.65 |
| 10 | $4.18 | $41.80 |
| 100 | $3.72 | $372.00 |
| 500 | $3.35 | $1,675.00 |
| 1,000 | $2.98 | $2,980.00 |
| 3,000 | $2.62 | $7,860.00 |
Drop-in alternatives for IPB031N08N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB031N08N5
✅ Drop-In📋 Reference alternative (not in catalog)
IPD046N08N5ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →IPB031N08N5ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) | 120 A (Tc) |
| Power Dissipation (PD) Max | 167 W (Tc) |
| On-Resistance (RDS(on)) Max | 3.1 mOhm (VGS=10V) |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source + Tab) |
| Tab Connection | Drain (electrically connected to pin) |
| RoHS Status | Compliant |
| Automotive Qualified | Yes (per Arrow listing) |
IPB031N08N5ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate input - apply VGS=10V typical for full enhancement |
| Pin 2 | Drain (D) — Drain connection - also electrically bonded to metal tab |
| Pin 3 | Source (S) — Source connection - reference for gate drive |
| Pin Tab | Drain (D) — Metal tab - solder to PCB copper for thermal dissipation; internally connected to Drain |
Safe Operating Area (SOA)
Typical Applications
IPB031N08N5ATMA1 is suitable for 6 applications: 48V Telecom and Server Power Supplies, Synchronous Rectification in Isolated DC-DC Converters, Hot-Swap and OR-ing FETs in Redundant Systems, Automotive 12V/24V/48V Load Switching, Industrial Motor Drive Bridges, High-Current Buck and Boost Converters.
48V Telecom and Server Power Supplies
The IPB031N08N5ATMA1's 80V VDS rating and 3.1 mOhm RDS(on) make it ideal for 48V telecom and server primary-side switching where efficiency at high current directly impacts operating cost. In a typical 48V-to-12V isolated DC-DC converter, this device functions as the synchronous rectifier on the secondary, replacing Schottky diodes and saving 3-5% system efficiency at full load. The 120A Tc rating provides substantial margin above the 60-80A typical operating current, reducing junction temperature and extending MTBF.
Recommended
Synchronous Rectification in Isolated DC-DC Converters
Used as the secondary-side synchronous rectifier MOSFET, the IPB031N08N5ATMA1 replaces Schottky diodes in forward, full-bridge, and LLC converters operating from 48V or 24V input rails. Its 3.1 mOhm RDS(on) at VGS=10V minimizes conduction loss at the high secondary currents typical of high-density DC-DC modules. The low Qg of OptiMOS 5 keeps gate-drive losses minimal at switching frequencies of 100-300 kHz, where most modern isolated converters operate.
Recommended
Hot-Swap and OR-ing FETs in Redundant Systems
In N+1 redundant -48V server and telecom power systems, the IPB031N08N5ATMA1 serves as the hot-swap or OR-ing MOSFET, isolating failed modules without disrupting the live bus. Its 80V rating provides comfortable margin above the 48V nominal plus transients, while the 3.1 mOhm RDS(on) keeps steady-state dissipation low even at 80-100A continuous load. The D2PAK package supports the thermal demands of continuous current flow during normal operation.
Recommended
Automotive 12V/24V/48V Load Switching
With automotive qualification and 80V VDS rating, the IPB031N08N5ATMA1 is well-suited to automotive load switching, ECU power distribution, and 48V mild-hybrid applications. The device handles 12V and 24V body electronics comfortably with vast margin, and supports 48V mild-hybrid rails where load-dump transients can reach 60V+. The D2PAK package survives the harsh automotive thermal environment (-40C to +125C ambient typical) when properly heatsunk.
Recommended
Industrial Motor Drive Bridges
In industrial brushless DC and stepper motor drives operating from 24V-48V supplies, the IPB031N08N5ATMA1 functions as the low-side switch in three-phase half-bridge inverters. Its 120A continuous rating handles the inrush currents of large motors, while the 3.1 mOhm RDS(on) keeps conduction loss acceptable at the high duty cycles typical of PWM motor control. Pair with a dedicated gate driver IC for optimal switching performance.
Recommended
High-Current Buck and Boost Converters
In non-isolated buck and boost converters for industrial, solar, and battery-powered applications, the IPB031N08N5ATMA1 acts as the main switching element or synchronous rectifier at currents of 50-100A. Its 80V rating covers most 24V-48V system rails, while the 3.1 mOhm RDS(on) delivers high efficiency at high duty cycles. The D2PAK footprint is one of the most widely supported by off-the-shelf DC-DC converter reference designs from major controller IC vendors.
Recommended
Recommended Products Summary
Engineering reference data for IPB031N08N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB031N08N5 | IPD046N08N5ATMA1 |
|---|---|---|---|
| Brand | Infineon | Infineon | Infineon |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same |
| VDS Max | 80 V | 80 V | 80 V |
| RDS(on) Max @ VGS=10V | 3.1 mOhm | 3.1 mOhm | 4.6 mOhm |
| Continuous ID (Tc) | 120 A | 120 A | [DATA_NEEDED: ID max] |
| Power Dissipation (Tc) | 167 W | 167 W | [DATA_NEEDED: PD max] |
| Technology | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 80V |
| Packaging | Tape & Reel (-ATMA1) | Tray/Bulk | Tape & Reel (-ATMA1) |
Key Differentiators
- 43% lower RDS(on) vs previous OptiMOS generation (vs Infineon OptiMOS 3 (BSC...))
- Same D2PAK footprint as previous generation (vs BSC014N04LSATMA1 (40V SuperSO8 alternative))
- 120A continuous current rating at Tc (vs IPD046N08N5ATMA1)
Design Notes
Estimated: at 50A continuous load with RDS(on)=3.1 mOhm, conduction loss = I^2 x RDS(on) = 7.75W. The D2PAK package's theta_JC is approximately 1.0 C/W, but the realistic junction-to-ambient thermal resistance depends heavily on PCB copper area - with a 1 sq inch 1 oz copper pour, theta_JA is roughly 50 C/W, yielding a 387C junction temperature rise which exceeds the 175C maximum. Active cooling or at least 4-6 sq inch of 2 oz copper is recommended to handle >30A continuous without active cooling. Always derate to 50-60% of the absolute ID max rating for reliability.
Solder the metal tab to a substantial copper pour - recommended minimum is 1 sq inch of 2 oz copper for 30-50A continuous operation. Use thermal vias (0.3mm diameter, 1mm pitch) under the tab to connect top-side copper to internal ground planes and bottom-side heatsink copper. Keep high-current drain/source traces wide (>=5mm per 10A) and minimize the high-current loop area to reduce stray inductance, which is critical for hard-switched topologies.
Place the gate-drive circuitry within 20mm of the gate pin to minimize gate-loop inductance - high gate-loop inductance causes ringing, false triggering, and increased switching loss. Use a dedicated gate-drive resistor (typically 4.7-22 ohm) close to the gate pin, and consider a small ferrite bead or 100 ohm series resistor if ringing persists. Keep the gate-driver ground return path directly to the MOSFET source pin, not to a remote ground.
Do not exceed VGS=+/-20V - gate oxide breakdown is permanent. Add a 10k ohm gate-source resistor to prevent false turn-on from dv/dt coupling when the MOSFET is off. Avoid operating the part in linear mode for extended periods - this part is optimized for switching applications, not linear regulation. Verify avalanche energy rating for any application where unclamped inductive switching (UIS) is possible.
Compliance Information
RoHS compliant per Infineon product page. AEC-Q100 qualified per Arrow listing which describes the part as 'Automotive'. Lead-free (Pb-free) reflow soldering compatible.
