IPB031N08N5ATMA1 vs IPB024N10N5ATMA1 比較

詳細並排比較 IPB031N08N5ATMA1 由 Infineon 與 IPB024N10N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IPB031N08N5ATMA1 IPB024N10N5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) 120 A (Tc) —
Power Dissipation (PD) Max 167 W (Tc) —
On-Resistance (RDS(on)) Max 3.1 mOhm (VGS=10V) —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] [DATA_NEEDED: Qg total gate charge]
工作溫度範圍 -55 C to +175 C -55C to +175C (junction)
封裝 PG-TO263-3 (D2PAK) PG-TO263-7 (D2PAK-7)
安裝類型 Surface Mount Surface Mount
腳位數 3 (Gate, Drain, Source + Tab) —
Tab Connection Drain (electrically connected to pin) —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] 1 (unlimited floor life at <30C/85% RH)
Automotive Qualified Yes (per Arrow listing) —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, TC=25C) — 180 A
Power Dissipation (PD, TC=25C) — 250 W
On-Resistance RDS(on) max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V — [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss — [DATA_NEEDED: Ciss value]
Output Capacitance Coss — [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr — [DATA_NEEDED: Qrr value]
Packaging — Tape & Reel (13-inch reel)
無鹵素 — Yes (per Infineon product family policy)

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