IPD046N08N5ATMA1 - 80V 90A 4.6mΩ OptiMOS 5 MOSFET | Infineon
MPN: IPD046N08N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
Drop-in alternatives for IPD046N08N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IPB057N08N5ATMA1
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View Datasheet →IPD046N08N5ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | 80 V |
| Continuous Drain Current (ID) at Tc=25°C | 90 A |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Power Dissipation (PD) at Tc=25°C | 125 W |
| Operating Junction Temperature Range | -55 °C to +175 °C |
| Package / Case | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) |
| Mounting Type | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET |
| RoHS Status | ROHS3 Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) |
IPD046N08N5ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; connect to gate driver output through gate resistor |
| Pin 2 | Drain (D) / Tab — Drain connection and primary thermal pad; solder to PCB copper pour |
| Pin 3 | Source (S) — Source return; connect to ground (low-side) or load return |
Safe Operating Area - IPD046N08N5ATMA1
Typical Applications
IPD046N08N5ATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, High-Current DC-DC Buck Converters, Motor Drive Half-Bridge and H-Bridge, Hot-Swap and OR-ing Controllers, Industrial SMPS Primary Switch, Battery Management and Protection.
48V Telecom Synchronous Rectification
The IPD046N08N5ATMA1 is engineered for synchronous rectification in 48V telecom and server power supplies, where its 4.6 mΩ RDS(on) and 80V rating minimize conduction losses on the secondary side of isolated DC-DC converters. Placed as the low-side FET in a half-bridge synchronous rectifier, it directly replaces Schottky diodes to gain 3-5% system efficiency at 48V-to-POL conversion stages. The OptiMOS 5 platform's low Qg (typical 30-50 nC) enables switching frequencies of 200-500 kHz while keeping driver losses manageable, allowing smaller magnetics in 1U/2U server PSU form factors.
Recommended
High-Current DC-DC Buck Converters
In high-current buck converters delivering 30A to 60A at point-of-load, the IPD046N08N5ATMA1 serves as the synchronous low-side switch, where its 4.6 mΩ RDS(on) keeps synchronous rectification losses under 1% even at full load. With VDS max of 80V, it can be used on 48V intermediate buses with full margin against transients, while the DPAK package enables single-sided PCB cooling through the drain tab. Compared to older OptiMOS 3 generations, the OptiMOS 5 cell halves the Qoss, reducing dead-time losses and improving light-load efficiency.
Recommended
Motor Drive Half-Bridge and H-Bridge
For motor drive H-bridges operating on 24V to 48V DC bus voltage, the IPD046N08N5ATMA1 provides the low RDS(on) needed for high-current PWM switching without excessive heating. Each phase leg uses two such MOSFETs, and the 90A continuous rating comfortably handles motor inrush currents during acceleration while the 125W power dissipation allows sustained operation at lower duty cycles. The DPAK package simplifies PCB layout and provides a robust mechanical attachment in vibration-prone industrial environments.
Recommended
Hot-Swap and OR-ing Controllers
In 48V hot-swap and OR-ing applications, the IPD046N08N5ATMA1 acts as the load-switch element, where its 4.6 mΩ RDS(on) minimizes steady-state voltage drop and its 80V rating provides margin for transients on plug-in events. The MOSFET's avalanche rating and linear-mode operation capability let it absorb the energy of inrush transients during board insertion. Designers typically parallel two devices for higher current or use a single device for 30-40A hot-swap circuits in server and telecom blade applications.
Recommended
Industrial SMPS Primary Switch
For industrial switched-mode power supplies with 24V to 48V input rails, the IPD046N08N5ATMA1 can serve as the main switching element in flyback, forward, or half-bridge topologies. Its 80V VDS rating accommodates reflected voltages in 48V-input flyback designs, while the 4.6 mΩ RDS(on) keeps primary-side conduction losses manageable at 5-10A continuous output. The OptiMOS 5 process also reduces switching losses, enabling higher frequency operation that shrinks transformer and output filter sizes.
Recommended
Battery Management and Protection
In battery management systems for 48V battery packs (eMobility, energy storage, UPS), the IPD046N08N5ATMA1 provides the disconnect switch function, where its 4.6 mΩ RDS(on) keeps continuous conduction losses below 1W even at 15A continuous discharge. The 80V rating easily handles the maximum stack voltage of a 13-14S Li-ion pack with margin. Its low thermal resistance allows sustained operation at high currents with minimal heatsinking, and the DPAK footprint enables compact protection circuit layouts.
Recommended
Recommended Products Summary
Engineering reference data for IPD046N08N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB057N08N5ATMA1 | IPD050N08N5ATMA1 | IPD78CN10NGATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TDSON-8 |
| VDS Max (V) | 80 V | 80 V | 80 V | 100 V | 80 V |
| RDS(on) Max (mΩ) at VGS=10V | 4.6 mΩ | 5.7 mΩ | 5.0 mΩ | 7.8 mΩ | 1.6 mΩ |
| Continuous Drain Current (A) at Tc=25°C | 90 A | 80 A | 85 A | 55 A | 100 A |
| Technology Generation | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 80V | OptiMOS 5 100V | OptiMOS 8 80V |
| RoHS Compliance | Yes (ROHS3) | Yes | Yes | Yes | Yes |
| Automotive Qualified (AEC-Q101) | No (industrial grade) | No | No | No | No |
Key Differentiators
- Industry-leading figure-of-merit (FOM) at 80V in DPAK package (vs IPD78CN10NGATMA1)
- Lower RDS(on) than earlier-generation OptiMOS 3 parts (vs IPB027N10N3GATMA1)
- Newer OptiMOS 8 generation available as drop-in upgrade path (vs ISC016N08NM8ATMA1)
Design Notes
At full 90 A load with 5 V drop across the FET, power dissipation is approximately 4.5 W. The DPAK package thermal resistance (RθJA, mounted on 1 oz copper 1 sq-inch pad) is approximately 40-50 °C/W, yielding a junction temperature rise of 180-225 °C above ambient - exceeding the 175 °C Tj max. Practical PCB designs must use at least 2-3 sq-inches of copper pour, multi-layer inner copper, or attach an external heatsink/clip to keep Tj below 150 °C at full load. Estimated with 1 oz copper pour, 25 °C ambient.
Use a Kelvin source connection where possible by routing the gate-drive return directly to the Source pin (pin 3), not to the power ground copper. This prevents source inductance from creating a negative feedback that slows switching and causes oscillation. Place the gate-drive resistor as close as possible to the gate pin. The drain tab requires a thermal via array (typically 9-16 vias of 0.3 mm diameter) under the drain pad to conduct heat into inner copper layers.
Driving the gate at less than 8 V will dramatically increase RDS(on) and may push the part outside its SOA. Use a dedicated gate driver (not a logic-level GPIO pin) capable of sourcing/sinking at least 1 A peak. Do not exceed VGS of ±20 V absolute maximum - typical 12 V gate drive is safe. Verify dv/dt immunity if the part is used in a half-bridge; otherwise a gate-source resistor of 10-100 kΩ may be needed to prevent Miller-induced turn-on.
Compliance Information
ROHS3 compliant per Infineon product page. Industrial grade, not AEC-Q100/101 qualified. Lead-free (Pb-free) reflow compatible per JEDEC J-STD-020. Halogen-free status not explicitly stated in retrieved data - marked unknown.
