IPD031N06L3GATMA1 vs IPT007N06NATMA1 比較
詳細並排比較 IPD031N06L3GATMA1 由 Infineon 與 IPT007N06NATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ 啟用中
規格比較
| 參數 | IPD031N06L3GATMA1 | IPT007N06NATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | — |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| 工作溫度範圍 | -55°C to +175°C | -55 C to +175 C (TJ) |
| 封裝 | PG-TO252-3 (DPAK) | PG-HSOF-8-1 (TOLL) |
| 安裝類型 | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | — |
| MSL 等級 | 1 (Unlimited) | MSL 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, TC=25C) | — | 300 A |
| On-Resistance (RDS(on), VGS=10V max) | — | 0.75 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Power Dissipation (PD, TC=25C) | — | 375 W |
| Configuration | — | Single N-channel |
| Gate Charge (QG) | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy (EAS) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Thermal Resistance (RthJC max) | — | [DATA_NEEDED: RthJC] |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |