IPD031N06L3GATMA1 vs IPG20N10S436AATMA1 比較
詳細並排比較 IPD031N06L3GATMA1 由 Infineon 與 IPG20N10S436AATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
IPD031N06L3GATMA1 ✓ 啟用中
規格比較
| 參數 | IPD031N06L3GATMA1 | IPG20N10S436AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 100 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W | — |
| RDS(on) Max at VGS=10V | 3.1 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | — |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V | — |
| Total Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typical value] | — |
| 工作溫度範圍 | -55°C to +175°C | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-TDSON-8-10 (Wettable Flank) |
| 安裝類型 | Surface Mount | Surface Mount |
| Series | OptiMOS 3 | — |
| MSL 等級 | 1 (Unlimited) | MSL1 (260 C peak reflow) |
| RoHS 狀態 | Compliant | Compliant (Green Product) |
| Configuration | — | Dual N-Channel (2 Elements with Built-in Diode) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Total Power Dissipation (PD) | — | 43 W |
| Operating Mode | — | Enhancement Mode |
| Operating Temperature (TJ max) | — | +175 C |
| JESD-609 Code | — | e3 |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100% |
| AOI Compatible | — | Yes (Wettable Flank) |
| Channel Type | — | N-Channel Normal Level |