IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon
MPN： IRFR540ZTRPBF ✓ 啟用中IRFR540ZTRPBF 概覽
An N-channel power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source. When the gate-source voltage exceeds the threshold, a conductive channel forms, allowing current to flow with very low resistance. N-channel MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and are the workhorse switching element in DC-DC converters, motor drives, and power-management circuits across industrial, automotive, and consumer systems.
Key features include a drain-source breakdown voltage of 100 V, continuous drain current up to 35 A at case temperature, pulsed current capability significantly higher, avalanche-rated body diode for inductive switching, and a logic-compatible gate threshold. The DPAK (TO-252AA) package exposes the drain tab for direct PCB heatsinking, achieving low thermal resistance in a compact surface-mount footprint that is the de-facto industry standard for medium-power applications.
The device leverages Infineon's proprietary IR MOSFET cell design, which optimizes the trade-off between on-resistance, switching speed, and avalanche ruggedness. With 28.5 mOhm Rds(on) and 39 nC Qg, conduction and switching losses are balanced for hard-switched topologies operating from single-digit to low-hundred kilohertz. The avalanche-rated intrinsic body diode further allows reliable operation in half-bridge and freewheeling configurations.
Typical applications include DC-DC converters (buck and synchronous-rectifier stages), motor-driver H-bridges and half-bridges, solenoid and relay drivers, battery protection circuits, and eMobility auxiliary systems such as 12 V/24 V/48 V load management. The 100 V rating provides comfortable headroom for 24 V industrial buses and 48 V mild-hybrid automotive rails.
When designing with this part, prioritize thermal management: the 91 W power rating applies at case temperature, and the DPAK tab must be soldered to a copper pour sized to keep junction temperature below 150 C. For switching applications, keep the gate-drive loop compact to minimize ringing, and add a small gate-source resistor if paralleling multiple devices.
This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes that complement the manufacturer datasheet rather than restating it verbatim.
直接替換替代品，適用於 IRFR540ZTRPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRFR540ZTRPBF （相同外形與佔位） — 差異在於 Technology, Package, Operating Junction Temperature, Mounting Type, Drain-Source Voltage (VDS).
IRFR3710ZTRPBF
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →IRFR4510TRPBF
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
IRFR540ZTRLPBF
✅ 直接替換聯絡詢價
查看資料表 →AUIRFR540Z
✅ 直接替換📋 參考替代品（不在目錄中）
VBE1104N
✅ 直接替換📋 參考替代品（不在目錄中）
IRFB3207ZPBF
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →IRFR540ZTRPBF 最大額定值與電氣特性
| 電晶體類型 | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 35 A (at Tc) |
| On-Resistance Rds(on) Max | 28.5 mOhm at Vgs=10V |
| Total Gate Charge (Qg) | 39 nC |
| Power Dissipation (Pd) | 91 W (at Tc) |
| 工作溫度範圍 | -55 C to +175 C (junction) |
| 封裝 | TO-252AA (DPAK) surface mount |
| Technology | IR MOSFET |
| 安裝類型 | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) |
| MSL 等級 | 1 (unlimited floor life at <30 C / 85% RH) |
| RoHS 狀態 | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Automotive Qualified | Yes (AEC-Q101) |
IRFR540ZTRPBF 腳位配置
| 腳位 1 | GATE — Gate drive input; controls channel conduction |
| 腳位 2 | DRAIN — Drain terminal; also connected to metal tab on package back |
| 腳位 3 | SOURCE — Source terminal; common return path |
安全工作區 (DC, Tj=25C)
典型應用
IRFR540ZTRPBF 適用於 7 應用s: DC-DC Buck Converter Synchronous Rectifier, 12V/24V Brushed DC Motor Driver Half-Bridge, Battery Protection and Load Switch, Solenoid and Relay Driver, LED Lighting Driver Power Stage, 48V Mild-Hybrid Automotive Auxiliary Systems, Uninterruptible Power Supply (UPS) and Inverter.
DC-DC Buck Converter Synchronous Rectifier
The IRFR540ZTRPBF serves as the low-side synchronous rectifier in 24V-input buck converters delivering 5-20A output. Its 28.5 mOhm Rds(on) at Vgs=10V and 39 nC Qg balance conduction and switching losses for hard-switched topologies at 100-500 kHz. The DPAK tab solders directly to the PCB copper pour, achieving thermal resistance low enough for continuous 10-15A rectifier duty without forced air. Source-connected to the switching node, the device's avalanche-rated body diode handles dead-time conduction. Compared to a Schottky rectifier, the MOSFET reduces rectification loss by 50-70% but requires careful gate-drive timing to prevent shoot-through.
推薦
12V/24V Brushed DC Motor Driver Half-Bridge
In H-bridge motor drivers for 12V/24V brushed DC motors (window lift, seat adjust, fans, pumps), the IRFR540ZTRPBF's 35A continuous drain current and 100V Vds comfortably handle inrush currents and back-EMF. The avalanche-rated body diode eliminates the need for an external freewheeling diode in most cases. Paired with a complementary gate driver such as the IR2109SPBF, the H-bridge delivers up to ~250W continuous mechanical power per leg. The DPAK package enables direct PCB mounting in space-constrained automotive modules where TO-220 would not fit.
推薦
Battery Protection and Load Switch
The IRFR540ZTRPBF works as a low-side load switch or reverse-battery protection element in 12V/24V lead-acid and Li-ion battery management systems. The 35A current rating supports main battery disconnect for packs up to ~400W continuous load. Its low Rds(on) of 28.5 mOhm at full Vgs keeps steady-state dissipation below 35W at 35A. AEC-Q101 qualification (in the AUIRFR540Z variant) makes it suitable for automotive battery management modules. A simple gate drive controlled by MCU logic or a dedicated BMS IC enables controlled inrush, soft-start, and over-current shutdown.
推薦
Solenoid and Relay Driver
Industrial solenoid valves, pneumatic actuators, and electromechanical relays benefit from the IRFR540ZTRPBF's 35A peak handling and 100V avalanche rating. When driving large inductive loads (solenoids store substantial energy), the body diode absorbs back-EMF directly when the MOSFET turns off, eliminating flyback diodes in many circuits. The fast switching enables PWM proportional control at 1-10 kHz for variable-force solenoids. Compatible with 24V industrial control systems and 12V/24V automotive actuators. Pair with a gate driver like the IR2128SPBF for fast turn-off and protected switching.
推薦
LED Lighting Driver Power Stage
In high-brightness LED drivers for architectural, automotive headlight, and industrial lighting, the IRFR540ZTRPBF operates as the main switching element in constant-current buck or boost converters. Its 100V rating supports 48V LED strings with comfortable margin, and 35A continuous current drives LED arrays up to several hundred watts. The 28.5 mOhm Rds(on) keeps converter efficiency above 95% in well-designed buck topologies. Fast switching (39 nC Qg) enables operation at 100 kHz+ for compact magnetics. The DPAK package handles thermal dissipation in enclosed luminaire housings.
推薦
48V Mild-Hybrid Automotive Auxiliary Systems
Modern 48V mild-hybrid vehicles require power MOSFETs rated above the 60V class to handle 48V bus transients and load-dump events. The IRFR540ZTRPBF's 100V Vds provides >2x headroom over the 48V nominal bus voltage, meeting automotive electrical transient requirements. Applications include 48V eBoost auxiliary pumps, electric turbo actuators, and DC-DC converters interfacing the 48V bus with 12V subsystems. The AEC-Q101 qualified AUIRFR540Z variant is preferred for these safety-relevant systems. The DPAK package enables compact PCB integration in IP-rated automotive modules.
推薦
Uninterruptible Power Supply (UPS) and Inverter
In low-power UPS systems and small DC-AC inverters, the IRFR540ZTRPBF switches the low-voltage (24-48V) DC bus into the transformer or filter stage. Its 35A continuous current supports inverter outputs up to ~1 kVA at 24V bus voltage. The fast switching (39 nC Qg) and avalanche-rated body diode suit hard-switched full-bridge inverter topologies operating at 20-50 kHz. The DPAK package's exposed metal tab provides effective heatsinking for the continuous conduction losses typical in inverter designs. The AEC-Q101 qualified variant is used in vehicle inverter systems.
推薦
推薦產品摘要
工程參考資料，適用於 IRFR540ZTRPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IRFR3710ZTRPBF | IRFR4510TRPBF | IRFR540ZTRLPBF | AUIRFR540Z | VBE1104N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Drain-Source Voltage (Vds) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Approx. Unit Price (qty 1000) | $0.39 | ~$0.55 | ~$0.60 | ~$0.39 | ~$0.55 | ~$0.20 |
主要差異化特點
- Automotive AEC-Q101 qualification on identical die (對比IRFR540Z (standard grade))
- Lower Rds(on) at same Vds rating (對比IRFR4510TRPBF)
- Lower cost than AEC-Q101-only alternatives (對比AUIRFR540Z (AEC-Q101 only))
設計說明
The DPAK package's 91 W power dissipation rating applies at case temperature Tc=25 C. In real PCB-mounted designs, the effective power limit is set by Rtheta_JA, which depends on copper-pour area: a 1 square inch 2 oz copper pad achieves ~50 C/W, limiting continuous dissipation to ~3 W before derating. Estimate: at Id=10A and Rds(on)=28.5 mOhm, conduction loss is 2.85 W; at Id=20A it is 11.4 W requiring significant cooling. For 20 A+ designs, use multiple parallel MOSFETs or migrate to D2PAK (TO-263) for lower thermal resistance.
Minimize the gate-drive loop by placing the gate resistor and gate-driver output as physically close to the GATE pin (pin 1) as possible. Keep the high-current loop (DRAIN -> load -> SOURCE -> GND -> back to DRAIN) compact to reduce stray inductance and switching ringing. The DPAK's exposed metal tab (drain) must be soldered to a copper pour sized for the application's thermal dissipation; vias under the tab to internal ground/power planes further reduce thermal resistance. Add a small gate-source resistor (10-100 kOhm) to prevent accidental turn-on from dv/dt-induced gate charge.
Estimated gate-drive requirement: at Qg=39 nC and a target switching time of 50 ns, peak gate current = Qg/t = 0.78 A, which a standard CMOS gate driver cannot source. Use a dedicated gate driver (TC4420/TC4429 for low-side; IR2109SPBF/IR2110SPBF for half-bridge). Exceeding Vgs(max) of +/-20 V destroys the gate oxide; use a 12V Zener clamp or gate-drive voltage regulator. For inductive loads (motors, solenoids, transformers), the intrinsic body diode handles back-EMF in most cases but verify avalanche energy (EAS) against worst-case stored energy.
At switching frequencies above 100 kHz, the DPAK package's lead inductance (~5 nH source lead) causes significant drain-voltage ringing during hard switching. Snubber circuits (RC or RCD across drain-source) reduce ringing and EMI but dissipate additional power. For lowest ringing, select gate-drive resistors that slow switching edges to ~50-100 ns. The body diode's reverse-recovery charge (Qrr) adds switching loss in synchronous-rectifier applications; consider Schottky diode paralleling for highest-efficiency designs above 200 kHz.
合規資訊
AEC-Q101 (automotive MOSFET grade) qualified per Infineon datasheet. RoHS and REACH compliant per product page. Lead-free / Halogen-free per PBF suffix. Conflict-minerals status available via Infineon product compliance declarations.
