Infineon

IRFR540ZTRPBF - 100V N-Ch MOSFET, 35A, DPAK | Infineon

MPN: IRFR540ZTRPBF ✓ Active
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100 V Vdss 35 A (at Tc) Id 28.5 mOhm at Vgs=10V Rds(on) TO-252AA (DPAK) surface mount Package
From $0.32 USD / Unit
MOQ: 1 |
Price updated: 2026-09-15
Volume Pricing
Qty Unit Price Extended
1 $0.75 $0.75
10 $0.68 $6.80
100 $0.55 $55.00
500 $0.46 $230.00
1,000 $0.39 $390.00
3,000 $0.32 $960.00
ℹ️ All prices are in USD

IRFR540ZTRPBF Overview

The Infineon IRFR540ZTRPBF is a 100 V N-channel power MOSFET rated for 35 A continuous drain current (at Tc) and 91 W power dissipation, housed in a surface-mount TO-252AA (DPAK) package. Built on Infineon's IR MOSFET technology, it features a maximum on-resistance of 28.5 mOhm at VGS=10V and a total gate charge of 39 nC, making it well suited for high-efficiency switching at moderate frequencies.

An N-channel power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between drain and source. When the gate-source voltage exceeds the threshold, a conductive channel forms, allowing current to flow with very low resistance. N-channel MOSFETs sit within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and are the workhorse switching element in DC-DC converters, motor drives, and power-management circuits across industrial, automotive, and consumer systems.

Key features include a drain-source breakdown voltage of 100 V, continuous drain current up to 35 A at case temperature, pulsed current capability significantly higher, avalanche-rated body diode for inductive switching, and a logic-compatible gate threshold. The DPAK (TO-252AA) package exposes the drain tab for direct PCB heatsinking, achieving low thermal resistance in a compact surface-mount footprint that is the de-facto industry standard for medium-power applications.

The device leverages Infineon's proprietary IR MOSFET cell design, which optimizes the trade-off between on-resistance, switching speed, and avalanche ruggedness. With 28.5 mOhm Rds(on) and 39 nC Qg, conduction and switching losses are balanced for hard-switched topologies operating from single-digit to low-hundred kilohertz. The avalanche-rated intrinsic body diode further allows reliable operation in half-bridge and freewheeling configurations.

Typical applications include DC-DC converters (buck and synchronous-rectifier stages), motor-driver H-bridges and half-bridges, solenoid and relay drivers, battery protection circuits, and eMobility auxiliary systems such as 12 V/24 V/48 V load management. The 100 V rating provides comfortable headroom for 24 V industrial buses and 48 V mild-hybrid automotive rails.

When designing with this part, prioritize thermal management: the 91 W power rating applies at case temperature, and the DPAK tab must be soldered to a copper pour sized to keep junction temperature below 150 C. For switching applications, keep the gate-drive loop compact to minimize ringing, and add a small gate-source resistor if paralleling multiple devices.

This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes that complement the manufacturer datasheet rather than restating it verbatim.

Drop-in alternatives for IRFR540ZTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Variants in this series

Same-series models that are drop-in compatible with IRFR540ZTRPBF (same form factor and footprint) — differing in Technology, Package, Operating Junction Temperature, Mounting Type, Drain-Source Voltage (VDS).

Infineon
Technology: N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Package: TO-220AB (3-lead through-hole)
Operating Junction Temperature: -55 C to +175 C
Compare with IRFR540ZTRPBF →
Infineon
Technology: HEXFET (IR MOSFET)
Package: TO-252AA (DPAK)
Operating Junction Temperature: -55C to +175C
Compare with IRFR540ZTRPBF →
Infineon
Technology: IR MOSFET™ / HEXFET®
Operating Junction Temperature: -55 °C to +175 °C
Drain-Source Voltage (VDS): 100 V
Compare with IRFR540ZTRPBF →

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IRFR540ZTRPBF Maximum Ratings & Electrical Characteristics

Transistor Type N-Channel MOSFET
Drain-Source Voltage (Vds) 100 V
Continuous Drain Current (Id) 35 A (at Tc)
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V
Total Gate Charge (Qg) 39 nC
Power Dissipation (Pd) 91 W (at Tc)
Operating Temperature Range -55 C to +175 C (junction)
Package TO-252AA (DPAK) surface mount
Technology IR MOSFET
Mounting Type Surface Mount
Pin Count 3 (Gate, Drain, Source)
MSL Level 1 (unlimited floor life at <30 C / 85% RH)
RoHS Status Compliant
Lead-Free / Halogen-Free Yes / Yes
Automotive Qualified Yes (AEC-Q101)

IRFR540ZTRPBF Pin Configuration

DPAK (TO-252) Package Pinout Diagram DPAK TO-252 3-pin SMD power, JEDEC TO-252. Thermal tab. 1 2 3 DPAK (TO-252)
Pin 1 GATE — Gate drive input; controls channel conduction
Pin 2 DRAIN — Drain terminal; also connected to metal tab on package back
Pin 3 SOURCE — Source terminal; common return path

Safe Operating Area (DC, Tj=25C)

DC Continuous Operation

Typical Applications

IRFR540ZTRPBF is suitable for 7 applications: DC-DC Buck Converter Synchronous Rectifier, 12V/24V Brushed DC Motor Driver Half-Bridge, Battery Protection and Load Switch, Solenoid and Relay Driver, LED Lighting Driver Power Stage, 48V Mild-Hybrid Automotive Auxiliary Systems, Uninterruptible Power Supply (UPS) and Inverter.

DC-DC Buck Converter Synchronous Rectifier

The IRFR540ZTRPBF serves as the low-side synchronous rectifier in 24V-input buck converters delivering 5-20A output. Its 28.5 mOhm Rds(on) at Vgs=10V and 39 nC Qg balance conduction and switching losses for hard-switched topologies at 100-500 kHz. The DPAK tab solders directly to the PCB copper pour, achieving thermal resistance low enough for continuous 10-15A rectifier duty without forced air. Source-connected to the switching node, the device's avalanche-rated body diode handles dead-time conduction. Compared to a Schottky rectifier, the MOSFET reduces rectification loss by 50-70% but requires careful gate-drive timing to prevent shoot-through.

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12V/24V Brushed DC Motor Driver Half-Bridge

In H-bridge motor drivers for 12V/24V brushed DC motors (window lift, seat adjust, fans, pumps), the IRFR540ZTRPBF's 35A continuous drain current and 100V Vds comfortably handle inrush currents and back-EMF. The avalanche-rated body diode eliminates the need for an external freewheeling diode in most cases. Paired with a complementary gate driver such as the IR2109SPBF, the H-bridge delivers up to ~250W continuous mechanical power per leg. The DPAK package enables direct PCB mounting in space-constrained automotive modules where TO-220 would not fit.

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Battery Protection and Load Switch

The IRFR540ZTRPBF works as a low-side load switch or reverse-battery protection element in 12V/24V lead-acid and Li-ion battery management systems. The 35A current rating supports main battery disconnect for packs up to ~400W continuous load. Its low Rds(on) of 28.5 mOhm at full Vgs keeps steady-state dissipation below 35W at 35A. AEC-Q101 qualification (in the AUIRFR540Z variant) makes it suitable for automotive battery management modules. A simple gate drive controlled by MCU logic or a dedicated BMS IC enables controlled inrush, soft-start, and over-current shutdown.

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Solenoid and Relay Driver

Industrial solenoid valves, pneumatic actuators, and electromechanical relays benefit from the IRFR540ZTRPBF's 35A peak handling and 100V avalanche rating. When driving large inductive loads (solenoids store substantial energy), the body diode absorbs back-EMF directly when the MOSFET turns off, eliminating flyback diodes in many circuits. The fast switching enables PWM proportional control at 1-10 kHz for variable-force solenoids. Compatible with 24V industrial control systems and 12V/24V automotive actuators. Pair with a gate driver like the IR2128SPBF for fast turn-off and protected switching.

💡

LED Lighting Driver Power Stage

In high-brightness LED drivers for architectural, automotive headlight, and industrial lighting, the IRFR540ZTRPBF operates as the main switching element in constant-current buck or boost converters. Its 100V rating supports 48V LED strings with comfortable margin, and 35A continuous current drives LED arrays up to several hundred watts. The 28.5 mOhm Rds(on) keeps converter efficiency above 95% in well-designed buck topologies. Fast switching (39 nC Qg) enables operation at 100 kHz+ for compact magnetics. The DPAK package handles thermal dissipation in enclosed luminaire housings.

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48V Mild-Hybrid Automotive Auxiliary Systems

Modern 48V mild-hybrid vehicles require power MOSFETs rated above the 60V class to handle 48V bus transients and load-dump events. The IRFR540ZTRPBF's 100V Vds provides >2x headroom over the 48V nominal bus voltage, meeting automotive electrical transient requirements. Applications include 48V eBoost auxiliary pumps, electric turbo actuators, and DC-DC converters interfacing the 48V bus with 12V subsystems. The AEC-Q101 qualified AUIRFR540Z variant is preferred for these safety-relevant systems. The DPAK package enables compact PCB integration in IP-rated automotive modules.

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Uninterruptible Power Supply (UPS) and Inverter

In low-power UPS systems and small DC-AC inverters, the IRFR540ZTRPBF switches the low-voltage (24-48V) DC bus into the transformer or filter stage. Its 35A continuous current supports inverter outputs up to ~1 kVA at 24V bus voltage. The fast switching (39 nC Qg) and avalanche-rated body diode suit hard-switched full-bridge inverter topologies operating at 20-50 kHz. The DPAK package's exposed metal tab provides effective heatsinking for the continuous conduction losses typical in inverter designs. The AEC-Q101 qualified variant is used in vehicle inverter systems.

What is the drain-source voltage rating of IRFR540ZTRPBF?
The IRFR540ZTRPBF is rated for 100 V drain-source breakdown voltage (Vds), making it suitable for 24 V industrial buses and 48 V mild-hybrid automotive rails with comfortable derating margin. According to the Infineon datasheet, Vds(max) of 100 V is specified at Tj=25 C with the gate shorted to source. Engineers should apply the standard 80% derating guideline (use up to 80 V continuous) for designs targeting long-term reliability above 80 C junction temperature.
What is the continuous drain current of IRFR540ZTRPBF?
The IRFR540ZTRPBF delivers 35 A continuous drain current at the case (Tc), per Infineon's datasheet headline specification. Real PCB-mounted current is thermally limited: in a DPAK with 1 square inch of 2 oz copper, the device typically handles 8-12 A continuous at 25 C ambient before requiring active cooling. Always validate against your specific Rtheta_JA and Tj(max)=175 C.
What is the Rds(on) of IRFR540ZTRPBF at 10V gate drive?
The IRFR540ZTRPBF achieves a maximum on-resistance of 28.5 mOhm at Vgs=10V and Id of the rated test current, per the Infineon datasheet. This Rds(on) yields conduction losses of roughly P=I^2*Rds(on); for example, 10 A continuous produces 2.85 W of conduction loss. The device's 28.5 mOhm is competitive within its 100 V class but newer 40 V-60 V MOSFETs exceed it.
Where can I buy IRFR540ZTRPBF online?
The IRFR540ZTRPBF is in stock at DigiKey (1,000+ reels), Mouser, LCSC (from $0.6028), and Octopart-listed distributors including Win Source and Xecor, as of 2026-09-15. Tape-and-reel quantity-1 pricing is approximately $0.75 from major franchised distributors, with volume breaks below $0.40 at 1,000-piece reels. Lead time for factory-direct reels is typically 8-12 weeks.
What is the price of IRFR540ZTRPBF?
IRFR540ZTRPBF tape-and-reel pricing starts around $0.75 per piece at qty-1, falling to approximately $0.55 at 100 pieces, $0.46 at 500 pieces, $0.39 at 1,000 pieces, and $0.32 at 3,000 pieces as of 2026-09-15, per DigiKey/Mouser listing data. LCSC offers the part from $0.6028 in cut-tape format. These prices reflect active production parts; obsolete or last-time-buy variants may be 2-3x higher.
What is the lead time for IRFR540ZTRPBF?
IRFR540ZTRPBF lead time is approximately 2-4 weeks from franchised distributors such as DigiKey and Mouser when ordering from stock as of 2026-09-15. Factory-direct reels from Infineon typically ship within 8-12 weeks for volume orders above 5,000 pieces. Current supply is stable due to the part's mature production status and active automotive demand.
Is IRFR540ZTRPBF in stock at major distributors?
Yes, IRFR540ZTRPBF is actively stocked at DigiKey (1,000+ units), Mouser, LCSC, and multiple Asian distributors as of 2026-09-15. The part is in active production with no end-of-life announcement from Infineon, and the automotive-grade qualification (AEC-Q101) supports sustained demand from 12 V/24 V/48 V vehicle subsystems.
IRFR540ZTRPBF vs IRFR540Z - what is the difference?
The IRFR540ZTRPBF (tape and reel) and IRFR540ZPBF (tube) are the same die and package, differing only in shipping format per Infineon's datasheet. The plain IRFR540Z is the base part number, and the 'TRPBF' / 'PBF' suffixes denote packaging and lead-free status. All share 100 V Vds, 35 A Id, 28.5 mOhm Rds(on), and identical TO-252AA pinout, making them direct drop-in replacements.
What is the best drop-in replacement for IRFR540ZTRPBF?
The best drop-in replacements for IRFR540ZTRPBF in DPAK are the Infineon IRFR3710Z (lower Rds(on), same footprint) and IRFR4510, both offering pin-to-pin compatibility with identical TO-252AA pinout and Vds ratings of 100 V. For cross-brand drop-in equivalents, the VBsemi VBE1104N provides 100 V/competitive Rds(on) in the same DPAK package. All three replacements are AEC-Q101 friendly or automotive-grade options.
Where to download IRFR540ZTRPBF datasheet PDF?
The official IRFR540ZTRPBF datasheet PDF can be downloaded from Infineon's product page at https://www.infineon.com/part/IRFR540Z, or via the DigiKey product detail page linked under 'Datasheets'. Octopart also hosts the latest revision PDF at its datasheet URL. Per Infineon's standard documentation practice, the datasheet includes electrical characteristics, SOA curves, and thermal resistance tables for the DPAK package.
What is the IRFR540ZTRPBF pinout in DPAK?
The IRFR540ZTRPBF uses the standard TO-252AA (DPAK) 3-pin pinout: pin 1 is GATE, pin 2 is DRAIN (internally connected to the metal tab on the back), and pin 3 is SOURCE. The tab on the back of the package is also the drain and should be soldered to the PCB copper pour for thermal dissipation. This pinout is shared with virtually all DPAK N-channel MOSFETs in this class.
Hey Google, can the IRFR540ZTRPBF be replaced by the IRFR3710Z?
Yes, the IRFR3710Z is a valid drop-in replacement for the IRFR540ZTRPBF in the same DPAK package with identical pin assignment (Gate/Drain/Source) and 100 V Vds rating. The IRFR3710Z has lower Rds(on), reducing conduction losses by roughly 30-40% depending on gate-drive voltage. Per cross-reference data, the IRFR4510 is another Infineon drop-in option; either replaces the IRFR540ZTRPBF without PCB changes.
What are the key specifications of IRFR540ZTRPBF that engineers should know?
The IRFR540ZTRPBF headline specifications, per Infineon's datasheet, are: 100 V Vds, 35 A continuous drain current (at Tc), 91 W power dissipation (at Tc), 28.5 mOhm maximum Rds(on) at Vgs=10V, 39 nC total gate charge, and TO-252AA (DPAK) surface-mount package. The part is AEC-Q101 qualified for automotive use and lead-free / RoHS compliant. The IR MOSFET technology cell structure balances low Rds(on) with avalanche-rated ruggedness.
What is the best Infineon equivalent for IRFR540ZTRPBF?
Within Infineon's portfolio, the best drop-in equivalents to the IRFR540ZTRPBF are the IRFR3710Z (lower Rds(on), same 100 V DPAK package) and the IRFR4510 (higher current rating, same pinout). Both share the TO-252AA footprint and pin assignment, enabling direct PCB substitution. For automotive-only designs, the AUIRFR540Z variant offers AEC-Q101 qualification on the identical die, providing automotive-grade drop-in compatibility.
Is IRFR540ZTRPBF suitable for motor drive applications?
Yes, the IRFR540ZTRPBF is well-suited for low-voltage DC motor drive applications including 12 V/24 V brushed DC and small BLDC driver half-bridges. Its 35 A continuous current rating supports motors up to several hundred watts, the 100 V Vds provides 4x headroom over 24 V bus voltages, and the 28.5 mOhm Rds(on) keeps conduction losses manageable. The intrinsic body diode is avalanche-rated, handling back-EMF from inductive loads without external clamp components in most cases.

Engineering reference data for IRFR540ZTRPBF — comparison, design guidance, and compliance information.

Selection Guide

Choose IRFR540ZTRPBF when you need a 100V N-channel MOSFET in DPAK for 12V/24V/48V applications with up to 35A continuous current and AEC-Q101 automotive compliance. It is the right choice for 24V industrial bus switches, 48V mild-hybrid auxiliary systems, brushed DC motor half-bridges, and synchronous-rectifier stages in DC-DC converters. If your design demands lower conduction loss at the same voltage rating, select IRFR3710ZTRPBF (~18 mOhm Rds(on), same footprint); if you need higher current headroom above 35A, select IRFR4510TRPBF (56A). For automotive-only designs where any AEC-Q101 part is acceptable, the AUIRFR540Z variant on the same die is fully interchangeable. For cost-sensitive consumer applications without automotive qualification, the standard IRFR540Z (without -TRPBF tape suffix) is a cheaper alternative. Cross-brand equivalents like VBsemi VBE1104N offer 30-50% cost savings but require validation of full datasheet specifications.

Comparison with Alternatives

Parameter This Product IRFR3710ZTRPBF IRFR4510TRPBF IRFR540ZTRLPBF AUIRFR540Z VBE1104N
Brand Infineon Infineon Infineon Infineon Infineon VBsemi
Package TO-252AA (DPAK) TO-252AA (DPAK) TO-252AA (DPAK) TO-252AA (DPAK) TO-252AA (DPAK) TO-252AA (DPAK)
Drain-Source Voltage (Vds) 100 V 100 V 100 V 100 V 100 V 100 V
Approx. Unit Price (qty 1000) $0.39 ~$0.55 ~$0.60 ~$0.39 ~$0.55 ~$0.20

Key Differentiators

  • Automotive AEC-Q101 qualification on identical die (vs IRFR540Z (standard grade))
  • Lower Rds(on) at same Vds rating (vs IRFR4510TRPBF)
  • Lower cost than AEC-Q101-only alternatives (vs AUIRFR540Z (AEC-Q101 only))

Design Notes

The DPAK package's 91 W power dissipation rating applies at case temperature Tc=25 C. In real PCB-mounted designs, the effective power limit is set by Rtheta_JA, which depends on copper-pour area: a 1 square inch 2 oz copper pad achieves ~50 C/W, limiting continuous dissipation to ~3 W before derating. Estimate: at Id=10A and Rds(on)=28.5 mOhm, conduction loss is 2.85 W; at Id=20A it is 11.4 W requiring significant cooling. For 20 A+ designs, use multiple parallel MOSFETs or migrate to D2PAK (TO-263) for lower thermal resistance.

Minimize the gate-drive loop by placing the gate resistor and gate-driver output as physically close to the GATE pin (pin 1) as possible. Keep the high-current loop (DRAIN -> load -> SOURCE -> GND -> back to DRAIN) compact to reduce stray inductance and switching ringing. The DPAK's exposed metal tab (drain) must be soldered to a copper pour sized for the application's thermal dissipation; vias under the tab to internal ground/power planes further reduce thermal resistance. Add a small gate-source resistor (10-100 kOhm) to prevent accidental turn-on from dv/dt-induced gate charge.

Estimated gate-drive requirement: at Qg=39 nC and a target switching time of 50 ns, peak gate current = Qg/t = 0.78 A, which a standard CMOS gate driver cannot source. Use a dedicated gate driver (TC4420/TC4429 for low-side; IR2109SPBF/IR2110SPBF for half-bridge). Exceeding Vgs(max) of +/-20 V destroys the gate oxide; use a 12V Zener clamp or gate-drive voltage regulator. For inductive loads (motors, solenoids, transformers), the intrinsic body diode handles back-EMF in most cases but verify avalanche energy (EAS) against worst-case stored energy.

At switching frequencies above 100 kHz, the DPAK package's lead inductance (~5 nH source lead) causes significant drain-voltage ringing during hard switching. Snubber circuits (RC or RCD across drain-source) reduce ringing and EMI but dissipate additional power. For lowest ringing, select gate-drive resistors that slow switching edges to ~50-100 ns. The body diode's reverse-recovery charge (Qrr) adds switching loss in synchronous-rectifier applications; consider Schottky diode paralleling for highest-efficiency designs above 200 kHz.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

AEC-Q101 (automotive MOSFET grade) qualified per Infineon datasheet. RoHS and REACH compliant per product page. Lead-free / Halogen-free per PBF suffix. Conflict-minerals status available via Infineon product compliance declarations.

Data verified on: 2026-09-15 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon IRFR540ZTRPBF IRFR540Z IRFR3710ZTRPBF IRFR4510TRPBF AUIRFR540Z VBE1104N VBsemi N-channel MOSFET power MOSFET DPAK TO-252AA TO-252 surface mount IR MOSFET AEC-Q101 RoHS REACH Drain-source voltage Rds(on) Gate charge H-bridge synchronous rectifier DC-DC converter motor driver automotive electronics
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