IRS2104STRPBF vs IR2117STRPBF 比較

詳細並排比較 IRS2104STRPBF 由 Infineon 與 IR2117STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2104STRPBF IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IRS2104STRPBF ✓ 啟用中

規格比較

參數 IRS2104STRPBF IR2117STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
拓撲 Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 150 ns —
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL —
工作接面溫度 -40C to +150C —
封裝 8-Lead SOIC (SOIC-8) —
安裝類型 Surface Mount Surface Mount
MSL 等級 2 (1 year floor life per datasheet) MSL3 (per JEDEC J-STD-020)
Qualification Level Industrial —
RoHS 狀態 Compliant (PbF suffix) Compliant
Configuration — High-Side Single Channel
功能 — Gate Driver, Non-Inverting
Input Logic Compatibility — CMOS / TTL
輸出數量 — 1
Driven Device — N-Channel MOSFET / IGBT
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Channel Offset Voltage — up to +600 V
Peak Source Current (IOUT+) — 250 mA
Peak Sink Current (IOUT-) — 500 mA
Propagation Delay (Ton/Toff) — 125 ns (max)
上升時間 — 80 ns (typ)
下降時間 — 40 ns (typ)
Undervoltage Lockout (UVLO) — Yes
Negative Transient Voltage Tolerance — Yes, dV/dt immune
工作溫度範圍 — -40 C to +125 C
封裝 / 外殼 — 8-SOIC (0.154 inch / 3.90 mm width)
Lead-Free — Yes

資料表與資源

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