MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MPN： MRF5S21100HSR5 ✓ 啟用中MRF5S21100HSR5 概覽
An RF power MOSFET is a specialized lateral or vertical power field-effect transistor optimized to deliver useful gain and efficiency at radio frequencies above 100 MHz, as opposed to a switching-mode power MOSFET which targets low-frequency power conversion. RF power MOSFETs sit inside the larger hierarchy of power transistors (MOSFET -> FET -> transistor -> discrete semiconductor -> semiconductor) and represent the workhorse device for solid-state RF power generation in the 1 MHz to 3 GHz range, replacing older bipolar power transistors in many applications because of their higher input impedance and easier broadband matching.
Key features of the MRF5S21100HSR5 include 23 W CW output power capability, 13.5 dB typical gain at 2.17 GHz from a 28 V supply, a 65 V absolute maximum drain-to-source voltage, integrated ESD protection structure, and a thermally enhanced NI-780S ceramic package with a low thermal-resistance path designed for bolt-down flange mounting to an external heatsink. The device is fabricated on NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process technology which has become the de-facto standard for sub-3 GHz RF power amplification.
Typical applications include UMTS and LTE base-station driver stages in the 2.1 GHz downlink band, RFID and industrial-scientific-medical (ISM) band power amplifiers at 2.17 GHz, military and avionics RF links, and pulsed-radar driver amplifiers. The high gain at this frequency allows a single device to deliver the rated 23 W output with relatively low input drive, simplifying the preceding driver chain.
When designing with this device, allocate a substantial copper or aluminum heatsink with the lowest practical thermal resistance; the NI-780S package is specifically intended for bolt-down flange mounting rather than PCB-only thermal dissipation. Match the input and output networks to 50 ohms for test, and follow the NXP application-note bias sequencing to prevent thermal runaway during turn-on.
直接替換替代品，適用於 MRF5S21100HSR5 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRF5S21100HSR5 （相同外形與佔位） — 差異在於 Manufacturer, Mounting Type, Package / Case, Power Gain, Transistor Type.
MRF5S21130HSR5
✅ 直接替換聯絡詢價
查看資料表 →MRF5S21100H
✅ 直接替換📋 參考替代品（不在目錄中）
MRF5S21090HSR5
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MRF5S21100HSR5 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Status | Active |
| 電晶體類型 | N-Channel RF Power MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) |
| Operating Frequency | 2.16 GHz to 2.17 GHz |
| Drain-to-Source Voltage (Vdss) Max | 65 V |
| Test Supply Voltage | 28 V |
| Output Power (Pout) | 23 W (CW) |
| Power Gain | 13.5 dB (typical) |
| Drain Current (Id) | 1.05 A |
| 封裝 / 外殼 | NI-780S (ceramic flange-mount) |
| 安裝類型 | Chassis / Flange Mount (through-hole RF) |
| 工作溫度範圍 | -40C to +150C (junction) |
MRF5S21100HSR5 腳位配置
| 腳位 1 | RF Input / Gate — RF input lead, also gate bias access |
| 腳位 2 | Drain (Vdd) — DC drain supply, typically 28 V |
| 腳位 3 | RF Output — RF output lead |
| 腳位 4 | Source / Flange Ground — Source and chassis ground via ceramic flange |
Forward Bias 安全工作區 (estimated, see datasheet)
典型應用
MRF5S21100HSR5 適用於 6 應用s: UMTS/LTE 2.1 GHz Base-Station Driver Stage, Industrial / ISM Band 2.17 GHz Power Amplifier, Avionics and Military RF Link Amplifier, Pulsed-Radar Driver Amplifier, RFID Reader Power Amplifier, Test-and-Measurement RF Power Reference.
UMTS/LTE 2.1 GHz Base-Station Driver Stage
The MRF5S21100HSR5's 23 W CW output at 2.17 GHz and 13.5 dB typical gain make it a strong candidate as a driver or low-power final stage in 2.1 GHz UMTS and LTE base-station transmitters. Operating from a 28 V supply rail matches the standard DC bus used in macro-cell RF line-ups, simplifying power-conversion design. Compared with a 5 W or 10 W surface-mount RF MOSFET, the NI-780S flange package and 23 W rating allow one device to replace two cascaded stages, reducing board area and BOM cost in the PA chain.
推薦
Industrial / ISM Band 2.17 GHz Power Amplifier
The 2.16 to 2.17 GHz band overlaps several industrial-scientific-medical (ISM) allocations and proprietary RF heating or plasma-generation links. With 23 W CW output and 13.5 dB gain at 28 V, the MRF5S21100HSR5 provides sufficient headroom for class-AB linear amplification of digital modulation while remaining rugged under VSWR mismatch typical of industrial loads. Bolt-down NI-780S mounting simplifies integration into sealed industrial RF enclosures where PCB-only cooling is inadequate.
推薦
Avionics and Military RF Link Amplifier
The 2.1 to 2.2 GHz band covers portions of the avionics transponder and tactical military data-link spectrums. The MRF5S21100HSR5's NXP LDMOS process delivers the ruggedness required for military environments, including operation across -40C to +150C junction temperature and survival under high VSWR. The ceramic NI-780S package is hermetic-friendly and has a long heritage in defence RF line-replaceable units. A single 23 W device can drive a higher-power tube or SSPA final in a compact exciter chassis.
推薦
Pulsed-Radar Driver Amplifier
For short-pulse radar in the 2.1 GHz band, the MRF5S21100HSR5's 23 W CW capability translates to substantially higher peak power under pulsed operation with conservative duty cycle, while the 65 V Vdss rating provides the headroom needed for pulsed drain modulation. The 13.5 dB gain reduces driver-stage count, lowering system noise figure and improving pulse-to-pulse phase stability. NI-780S flange mounting simplifies integration into a radar chassis with forced-air or liquid cooling.
推薦
RFID Reader Power Amplifier
Long-range passive UHF RFID readers operating near 2.17 GHz require linear power amplifiers in the 10 to 30 W class to read tags at 10+ meters. The MRF5S21100HSR5's 13.5 dB gain at 2.17 GHz and 23 W CW output position it as an excellent PA candidate, providing the linear headroom needed for DSB-ASK or PR-ASK modulation while remaining efficient in class-AB bias. The bolt-down NI-780S package is well suited to the ruggedized enclosures typical of industrial RFID portals.
推薦
Test-and-Measurement RF Power Reference
RF test benches and ATE systems require calibrated 2.1 GHz power amplifiers with documented gain, efficiency and harmonic performance. The MRF5S21100HSR5, with its 23 W CW rating and 13.5 dB gain at 2.17 GHz from 28 V, is well matched to reference-driver roles in production test racks for cellular handsets and small cells. The NI-780S chassis mount enables repeatable thermal anchoring in a lab environment, where surface-mount RF MOSFETs can drift with board temperature.
推薦
推薦產品摘要
工程參考資料，適用於 MRF5S21100HSR5 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRF5S21130HSR5 | MRF5S21100H | MRF5S21090HSR5 |
|---|---|---|---|---|
| Package | NI-780S (ceramic flange) | NI-780S (same) | NI-780S (same) | NI-780S (same) |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (CW) | 23 W | 30 W | 23 W | 19 W |
| Operating Frequency | 2.16 - 2.17 GHz | 2.16 - 2.17 GHz | 2.16 - 2.17 GHz | 2.16 - 2.17 GHz |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Power Gain | 13.5 dB | 13.0 dB (typical, lower) | 13.5 dB | 14.0 dB (typical, higher) |
| Vdss Max | 65 V | 65 V | 65 V | 65 V |
| Packaging Suffix | SR5 (reel) | SR5 (reel) | bulk pack | SR5 (reel) |
主要差異化特點
- 23 W CW in a single NI-780S device at 2.17 GHz (對比MRF5S21130HSR5 (30 W))
- Pin-compatible with 19 W MRF5S21090HSR5 (對比MRF5S21090HSR5 (19 W))
- Available in both bulk and SR5 reel pack (對比MRF5S21100H (bulk))
設計說明
Estimated: at 23 W CW Pout, 28 V supply, and roughly 50 percent drain efficiency, the device dissipates approximately 23 W of waste heat in the NI-780S ceramic flange. The flange MUST be bolted to an external heatsink with low thermal compound; PCB copper alone will not dissipate this level of power. Target a heatsink thermal resistance below 1 C/W to keep the junction below 150 C at 25 C ambient.
The RF input and output leads of the NI-780S are 50 ohm nominal impedances and require external matching networks. Use microstrip or stripline on the host PCB tuned to 2.17 GHz, with the input network providing the necessary gain-equalisation and the output network maximising power and efficiency. Add gate-bias feed networks with gate-source resistors and DC-blocking capacitors per the NXP evaluation-board layout.
Do not exceed Vdss = 65 V or Id = 1.05 A. Apply gate bias before drain voltage to prevent thermal runaway and uncontrolled current spikes. Always include a gate-source pull-down resistor (typically 10 kohm) so the device defaults to off-state during power-up sequencing. Source: NXP LDMOS bias sequencing application notes.
Use a low-loss PCB substrate such as Rogers RO4003C or equivalent for the matching-network traces. Provide abundant via stitching around the RF leads to maintain a continuous ground reference, and keep the gate-bias trace physically separated from the RF path to prevent coupling and instability. Source: standard NXP 2 GHz RF PA layout practice.
合規資訊
Compliance status not stated in the provided data excerpt. NXP's legacy ceramic RF power packages frequently fall under the RoHS high-temperature solder exemption - verify with NXP product-compliance database before RoHS-only assembly.
