MRF5S21100HSR5 vs MRF5S21130HSR5 比較

詳細並排比較 MRF5S21100HSR5 由 NXP Semiconductors 與 MRF5S21130HSR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRF5S21100HSR5 MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP

MRF5S21100HSR5 ✓ 啟用中
NXP Semiconductors
MRF5S21130HSR5 MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP

MRF5S21130HSR5 Obsolete

規格比較

參數 MRF5S21100HSR5 MRF5S21130HSR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 Obsolete
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale, Motorola)
Part Status Active —
電晶體類型 N-Channel RF Power MOSFET LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology LDMOS (Laterally Diffused MOS) —
Operating Frequency 2.16 GHz to 2.17 GHz 2.11 GHz to 2.17 GHz
Drain-to-Source Voltage (Vdss) Max 65 V —
Test Supply Voltage 28 V —
Output Power (Pout) 23 W (CW) —
Power Gain 13.5 dB (typical) 13.5 dB (typical)
Drain Current (Id) 1.05 A —
封裝 / 外殼 NI-780S (ceramic flange-mount) NI-880S ceramic
安裝類型 Chassis / Flange Mount (through-hole RF) Surface Mount (SMT) with ceramic body
工作溫度範圍 -40C to +150C (junction) —
RoHS 狀態 [DATA_NEEDED: RoHS status from NXP product page] —
Lead-Free [DATA_NEEDED: lead-free finish] —
Part Number — MRF5S21130HSR5
Series — RF MOSFET Line / HV5
Test Voltage (Vdd) — 28 V
Test Current (Idq) — 1.2 A
Power Output (Pout) — 28 W (CW)
Drain-Source Voltage (Vdss Rated) — 65 V
Application — W-CDMA base station, TDMA/CDMA, multi-carrier amplifier
Status — Obsolete (last-time-buy windows closed at authorized distributors)
Tape and Reel Pack — R5 suffix = 500-piece reel
Orderable Lead-Free Status — [DATA_NEEDED: lead-free status from NXP PCN]

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