MRF5S21100HSR5 vs MRF5S21100HSR3 比較
詳細並排比較 MRF5S21100HSR5 由 NXP Semiconductors 與 MRF5S21100HSR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
NXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 Obsolete規格比較
| 參數 | MRF5S21100HSR5 | MRF5S21100HSR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | Obsolete |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Status | Active | Obsolete |
| 電晶體類型 | N-Channel RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) | — |
| Operating Frequency | 2.16 GHz to 2.17 GHz | — |
| Drain-to-Source Voltage (Vdss) Max | 65 V | — |
| Test Supply Voltage | 28 V | — |
| Output Power (Pout) | 23 W (CW) | — |
| Power Gain | 13.5 dB (typical) | 13.5 dB |
| Drain Current (Id) | 1.05 A | — |
| 封裝 / 外殼 | NI-780S (ceramic flange-mount) | NI-780S (lower thermal resistance, ceramic flanged) |
| 安裝類型 | Chassis / Flange Mount (through-hole RF) | Chassis / flange mount (through-hole, surface ceramic) |
| 工作溫度範圍 | -40C to +150C (junction) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status from NXP product page] | Compliant (low gold plating, 40 microinches nominal) |
| Lead-Free | [DATA_NEEDED: lead-free finish] | — |
| Frequency | — | 2.16 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.05 A |
| Power Output (Avg, 2x W-CDMA) | — | 23 W |
| Voltage - Rated (Max V DSS) | — | 65 V |
| Maximum VDD Operation | — | 32 V (qualified) |
| Supplier Device Package | — | NI-780S |
| Configuration | — | Single, Class AB |
| ESD Protection | — | Integrated |
| Matching | — | Internally matched (input and output) |
| Lead Finish | — | Gold, 40 microinches nominal |
| Packaging | — | Tape and Reel |
| Designed Application | — | W-CDMA, TDMA, CDMA, multicarrier base station PA |