1EDI20N12AFXUMA1 vs 2ED21834S06JXUMA1 对比

详细并排对比 1EDI20N12AFXUMA1 出自 Infineon 和 2ED21834S06JXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21834S06JXUMA1 2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED21834S06JXUMA1 ✓ 量产中

规格对比

参数 1EDI20N12AFXUMA1 2ED21834S06JXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.45 $0.89
Driver Configuration Single high-side, isolated —
Isolation Type Galvanic (coreless transformer), reinforced —
Number of Channels 1 —
Maximum Supply Voltage (Output Side) 17 V —
Minimum Supply Voltage (Output Side) 3.1 V —
Peak Source Current 4.0 A (typical) —
Peak Sink Current 3.5 A (typical) —
Working Voltage (Isolation) 1200 V (high-side rail reference) —
Propagation Delay 120 ns (typical) —
输出配置 Separate source and sink pins —
Short-Circuit Clamping Yes (built-in) —
封装 PG-DSO-8-51 (DSO-8, 8-pin, narrow body) PG-DSO-14-49 (DSO-14)
工作温度范围 -40 °C to +125 °C -40 °C to +125 °C
安装类型 Surface Mount Surface Mount
MSL 等级 2 (per JEDEC J-STD-020) —
RoHS Compliance Compliant —
Lead-Free Yes —
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Integrated Bootstrap Diode — Yes
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
引脚数 — 14
RoHS 状态 — Compliant
Standard Reel Quantity — 3000

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