1EDN7126GXTMA1 vs TLF11251LDXUMA1 对比

详细并排对比 1EDN7126GXTMA1 出自 Infineon 和 TLF11251LDXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1EDN7126GXTMA1 TLF11251LDXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.29 $0.98
功能 Single-channel TDI gate driver for GaN HEMT and Si MOSFET Half-Bridge Gate Driver
Configuration Non-Inverting —
Channel Type Single —
Driven Supply Voltage [DATA_NEEDED: VCC max value] —
Peak Source Current 1.5 A —
Peak Sink Current 1.5 A —
Common-Mode Voltage (CMR) 200 V —
Input Type Truly Differential Input (TDI) —
Propagation Delay (Typ.) [DATA_NEEDED: tpd typical value] —
Rise / Fall Time (Typ.) [DATA_NEEDED: tr / tf typical value] —
工作温度范围 -40C to +125C —
封装 PG-VSON-10-4 PG-TSON-10-2 (10-pin TSON with exposed pad)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 状态 Compliant Compliant
Reach Compliant —
Lead-Free Yes —
Input Logic Compatibility 3.3 V / 5 V TTL/CMOS (TDI) CMOS / TTL (non-inverting)
输出配置 — Half-Bridge (1 high-side + 1 low-side)
输出类型 — Non-Inverting
Peak Output Current — 2.5 A (source/sink)
上升时间 — 60 ns (typical)
下降时间 — 60 ns (typical)
Supply Voltage Range — 3.5 V to 7 V
Number of Drivers — 1 (half-bridge)
工作温度 — -40 C to +125 C (AEC-Q100 Grade 1)
Automotive Qualification — AEC-Q100
Protection Features — Shoot-through protection, UVLO

数据手册与资源

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