1EDN7136GXTMA1 vs 1EDN7136UXTSA1 对比
详细并排对比 1EDN7136GXTMA1 出自 Infineon 和 1EDN7136UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7136GXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.02 | $0.74 |
| Product Type | Low-side gate driver IC | — |
| Configuration | Single channel, non-inverting | — |
| Peak Source Current | 4 A | 1 A |
| Peak Sink Current | 8 A | 2 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET | — |
| Input Logic | TTL/CMOS compatible | — |
| UVLO | Yes (VDD under-voltage lockout) | — |
| Propagation Delay | Sub-nanosecond class | — |
| 封装 | PG-VSON-10-4 (leadless, thermal pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -40 C to +125 C | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Lead-free | Yes | — |
| Input Voltage (VDD) | [DATA_NEEDED: VDD range V] | — |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) | — |
| 功能 | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 输出数量 | — | 2 (high-side and low-side) |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Under-Voltage Lockout (UVLO) | — | Yes (driver supply and logic input) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| 工作温度范围 | — | -40 C to +150 C |
| Lead-Free | — | Yes |
| 无卤 | — | Yes (per Infineon product family convention) |