2ED2103S06FXUMA1 vs 2EDL6014ACG2DXTMA1 对比

详细并排对比 2ED2103S06FXUMA1 出自 Infineon 和 2EDL6014ACG2DXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2103S06FXUMA1 2EDL6014ACG2DXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $1.18
功能 Half-Bridge Gate Driver —
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封装 PG-DSO-8-69 (DSO-8 with exposed pad) 11-WQFN (2.2 x 2.2 mm) with exposed pad
安装类型 Surface Mount Surface Mount
工作温度范围 -40C to +125C —
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS 状态 Compliant —
Driver Type — Half-Bridge Gate Driver
Number of Channels — 2 (high-side + low-side)
输出配置 — Non-Inverting
High-Side Voltage Rating — 120 V
Source Output Current — 4 A
Sink Output Current — 6 A
Supply Voltage (VDD) — 2.97 V to 5.5 V
Rise Time (typ.) — 4.2 ns
Fall Time (typ.) — 3.8 ns
工作温度 — -40 C to +125 C
Packing Method — Tape & Reel
Isolation Type — Isolated (level-shifted floating high-side)
Technology Family — EiceDRIVER 2EDL

数据手册与资源

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