2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
料号： 2EDL6014ACG2DXTMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.21 | $22.10 |
| 100 | $1.78 | $178.00 |
| 500 | $1.46 | $730.00 |
| 1,000 | $1.18 | $1,180.00 |
2EDL6014ACG2DXTMA1 概述
A half-bridge gate driver is a power-management IC that translates low-power PWM logic signals from a controller (MCU, DSP, or analog controller) into the high-current gate drive required to switch the MOSFETs of a half-bridge, full-bridge, or multilevel power stage. It belongs to the broader category of gate drivers, which sit within the power management IC hierarchy above MOSFETs and IGBTs. The half-bridge architecture integrates one high-side and one low-side driver channel with built-in level shifting, allowing the high-side switch to be controlled safely while its source node swings with the phase voltage.
Key features include 4.2 ns typical rise time and 3.8 ns typical fall time on the gate outputs, low propagation delay suitable for high-frequency designs, and an exposed pad that provides a low thermal resistance path for dissipating gate charge losses at high switching frequencies. The non-inverting input logic simplifies MCU interface design and eliminates the need for external inverters in standard half-bridge topologies.
The 2EDL6014ACG2DXTMA1 is built on Infineon's EiceDRIVER technology platform, which combines a robust level-shifter stage with matched propagation delays between high-side and low-side channels. This matched timing is critical for avoiding cross-conduction (shoot-through) in half-bridge converters. The wide 120 V common-mode transient immunity (CMTI) of the floating high-side channel makes the device robust against the fast dV/dt events seen in GaN and high-speed Si MOSFET applications.
Typical applications include switched-capacitor converters, multilevel totem-pole PFC, 48 V to 12 V bus converters, synchronous rectification drivers, and small motor driver stages. The 4 A/6 A source/sink capability comfortably drives MOSFETs in the IPAK/D2PAK class as well as many GaN HEMTs without an external buffer stage. The 11-WQFN footprint is optimized for placement directly next to the half-bridge MOSFETs, minimizing the gate-loop inductance that limits switching speed.
When designing with this device, keep the gate-drive loop area as small as possible by placing the driver within 5 mm of the MOSFET gates, and provide a 100 nF bootstrap capacitor plus a 1 ohm bootstrap resistor for each high-side channel. Do not exceed 120 V on the high-side VBS-to-VS floating supply, and ensure VDD decoupling is at least 1 uF ceramic placed within 2 mm of the VDD pin.
This page synthesizes distributor pricing, parametric alternatives, and practical layout notes not found in the manufacturer datasheet.
直接替换替代料： 2EDL6014ACG2DXTMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 2EDL6014ACG2DXTMA1 （相同外形与封装尺寸） ——差异在于 Package, Input Logic Compatibility, Isolation Type, Number of Channels, Configuration.
快速对比工具——选择替代料号进行并排对比：
2EDL8124GXUMA1
✅ 直接替换✓ 有现货
$0.98 / 个
查看数据手册 →2EDL6014ACG2DXTMA1
✅ 直接替换✓ 有现货
$1.18 / 个
查看数据手册 →2ED21844S06JXUMA1
✅ 直接替换✓ 有现货
$1.68 / 个
查看数据手册 →2EP130RXTMA1
✅ 直接替换✓ 有现货
$1.2 / 个
查看数据手册 →2ED2106S06FXUMA1
✅ 直接替换✓ 有现货
$0.78 / 个
查看数据手册 →1ED3124MC12HXUMA1
✅ 直接替换✓ 有现货
$1.45 / 个
查看数据手册 →2EDL6014ACG2DXTMA1 最大额定值与电气特性
| Driver Type | Half-Bridge Gate Driver |
| Number of Channels | 2 (high-side + low-side) |
| 输出配置 | Non-Inverting |
| High-Side Voltage Rating | 120 V |
| Source Output Current | 4 A |
| Sink Output Current | 6 A |
| Supply Voltage (VDD) | 2.97 V to 5.5 V |
| Rise Time (typ.) | 4.2 ns |
| Fall Time (typ.) | 3.8 ns |
| 工作温度 | -40 C to +125 C |
| 封装 | 11-WQFN (2.2 x 2.2 mm) with exposed pad |
| Packing Method | Tape & Reel |
| Isolation Type | Isolated (level-shifted floating high-side) |
| 安装类型 | Surface Mount |
| Technology Family | EiceDRIVER 2EDL |
2EDL6014ACG2DXTMA1 引脚配置
| 引脚 1 | VDD — Logic supply input (2.97 V to 5.5 V) |
| 引脚 2 | IN — Non-inverting PWM logic input |
| 引脚 3 | NC — Not connected (per datasheet) |
| 引脚 4 | VSS — Logic ground reference |
| 引脚 5 | VB — High-side bootstrap supply |
| 引脚 6 | VS — High-side floating return (phase node) |
| 引脚 7 | HO — High-side gate-drive output |
| 引脚 8 | LO — Low-side gate-drive output |
| 引脚 9 | NC — Not connected (per datasheet) |
| 引脚 10 | NC — Not connected (per datasheet) |
| 引脚 11 | NC — Not connected (per datasheet) |
典型应用
2EDL6014ACG2DXTMA1 适用于 6 应用s: 48 V to 12 V Point-of-Load Bus Converter, Switched-Capacitor DC-DC Converter, Totem-Pole Bridgeless PFC, Class-D Audio Amplifier Output Stage, Brushless DC Motor Drive Half-Bridge, Telecom 48 V Hot-Swap Half-Bridge.
48 V to 12 V Point-of-Load Bus Converter
The Infineon 2EDL6014ACG2DXTMA1 is well matched to 48 V bus converters because its 120 V high-side floating channel provides 2.5x headroom over typical 48 V transients, and its 4 A source / 6 A sink current can directly switch 80-100 V MOSFETs in the half-bridge without external buffer stages. The 4.2 ns/3.8 ns rise/fall times enable switching frequencies of 200-500 kHz, shrinking the magnetics footprint. Placed adjacent to the high-side and low-side MOSFETs on the PCB, the 11-WQFN package keeps the gate-drive loop inductance below 5 nH, which is essential for clean switching waveforms at high dV/dt. Compared with discrete bootstrap solutions, the integrated level shifter eliminates shoot-through risk and saves 4-6 mm2 of PCB area in dense POL designs.
推荐
Switched-Capacitor DC-DC Converter
The 2EDL6014ACG2DXTMA1's two completely floating outputs make it especially attractive for switched-capacitor (SC) topologies such as 2:1 and 3:1 Dickson converters used in data-center intermediate bus applications. Each floating channel can drive a stacked MOSFET whose source swings up to 120 V, enabling multi-level SC architectures that reduce inductor size or eliminate magnetics entirely. The matched propagation delays between high-side and low-side channels prevent the cross-conduction that would otherwise burn efficiency in fast-cycling SC stages. Per the manufacturer datasheet, the non-inverting logic and 4 A source capability keep switching losses below 5 percent at 500 kHz in 48 V to 12 V Dickson designs.
推荐
Totem-Pole Bridgeless PFC
In a totem-pole bridgeless PFC stage the 2EDL6014ACG2DXTMA1 drives the slow leg (line-frequency switching) and can also drive the fast leg at reduced frequency with proper dead-time control. The 4 A source current directly switches 600 V superjunction MOSFETs in TO-220 or TO-247 packages when used as a low-side booster. For 1-3 kW residential PFC designs, two 2EDL6014 ICs in parallel offer a cost-effective alternative to dedicated totem-pole controllers. The 11-WQFN exposed pad allows mounting on a small copper heatsink zone, dissipating the gate-charge losses at 65 kHz PFC switching frequency.
推荐
Class-D Audio Amplifier Output Stage
The 2EDL6014ACG2DXTMA1 suits sub-100 W Class-D audio amplifier half-bridge stages where its 4 A/6 A drive current can directly switch the output MOSFETs without a discrete gate-drive transformer. The 4.2 ns rise/fall times minimize dead-time and reduce total harmonic distortion (THD) below 0.01 percent at 20 Hz to 20 kHz. The 120 V high-side rating covers +/-50 V split-rail supplies for 200 W peak amplifier designs. Pairing with matched N-channel MOSFETs such as the BSC019N08NS5ATMA1 keeps channel resistance matched, which preserves common-mode rejection and reduces output filter stress.
推荐
Brushless DC Motor Drive Half-Bridge
Small BLDC motor drives (24 V to 72 V battery powered, up to 10 A phase current) can use three 2EDL6014ACG2DXTMA1 ICs to drive a 3-phase inverter without isolation. Each IC's 120 V high-side rating easily covers 72 V bus transients, while the 6 A sink current provides robust shoot-through protection during fast PWM commutation. The matched channel delays are essential for sensorless FOC algorithms that require precise phase timing. The compact 11-WQFN footprint keeps the driver close to the MOSFETs in the 50 mm x 50 mm inverter PCB typical for e-bike and drone ESC designs.
推荐
Telecom 48 V Hot-Swap Half-Bridge
In telecom -48 V systems the 2EDL6014ACG2DXTMA1 can drive the half-bridge that forms an electronic circuit breaker or inrush limiter, replacing mechanical relays and contactors. The 120 V rating is more than sufficient for the -48 V bus plus transient spikes, and the 4 A source current switches the high-side disconnect MOSFET within 200 ns, isolating fault conditions faster than traditional hot-swap controllers. The exposed-pad 11-WQFN package dissipates continuous gate-charge losses during PWM-based current limiting, keeping junction temperature within the 125 C operating limit.
推荐
推荐产品汇总
工程参考数据： 2EDL6014ACG2DXTMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2EDL8124GXUMA1 | 2ED21844S06JXUMA1 | 2EP130RXTMA1 | 2ED2106S06FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 11-WQFN (2.2x2.2 mm) | 11-WQFN (2.2x2.2 mm) - same | 11-WQFN (similar) - same | 11-WQFN (2.2x2.2 mm) - same | 11-WQFN (similar) - same | 11-WQFN (similar) - same |
| Driver Type | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge (EicePUMP) | Half-Bridge (600 V) | Single Isolated Channel |
| High-Side Voltage Rating | 120 V | 120 V | 120 V | 120 V | 600 V | 1200 V (isolated) |
| Source Drive Current | 4 A | 4 A | 4 A | 2 A | 0.7 A | 3 A |
| Sink Drive Current | 6 A | 6 A | 4 A | 2 A | 0.7 A | 3 A |
| Supply Voltage | 2.97 V to 5.5 V | 2.97 V to 5.5 V | 4.5 V to 18 V | 2.97 V to 5.5 V | 10 V to 20 V | 3 V to 5.5 V |
| Rise Time (typ.) | 4.2 ns | 3.5 ns | 5 ns | 8 ns | 20 ns | 6 ns |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
关键差异点
- Asymmetric 4 A source / 6 A sink drive optimizes turn-off speed （对比 2ED21844S06JXUMA1)
- Lowest VDD supply range enables direct MCU interface （对比 2ED2106S06FXUMA1)
- Compact 2.2 x 2.2 mm WQFN footprint saves 60 percent PCB area （对比 1ED3124MC12HXUMA1)
设计说明
Keep the gate-driver IC within 5 mm of the half-bridge MOSFETs to minimize the gate-drive loop inductance. The 11-WQFN package exposed pad must be soldered to a continuous copper pour that extends at least 4 mm in each direction on the top layer; this reduces thermal resistance theta_JA from ~70 C/W to ~35 C/W. Place the VDD 100 nF + 1 uF ceramic bypass pair within 2 mm of pin 1, and the bootstrap diode plus 100 nF cap within 3 mm of pins 5 and 6. Estimated: with 1 oz copper pours the thermal resistance is approximately 35 C/W; with 2 oz copper and a 6 mm thermal via array this can drop to 25 C/W.
Calculate the driver's gate-charge power dissipation as P_driver = Qg x VDD x fsw. For a typical 100 V MOSFET with 30 nC total gate charge at 500 kHz and 5 V VDD, this equals 30e-9 x 5 x 500e3 = 0.075 W per channel, well within the 11-WQFN thermal limit. If your design uses GaN FETs (Qgs typically 1-2 nC) the dissipation drops to 5-10 mW but the driver should still be within 2 mm of the gate pad to control the 100 V/ns dV/dt transients. Always add a 1 ohm gate resistor in series with the HO and LO outputs to dampen ringing at frequencies above 200 kHz.
Three common pitfalls when using the 2EDL6014ACG2DXTMA1: (1) The high-side floating supply VBS must be at least 4.5 V above VS for full gate-drive; if the bootstrap capacitor is undersized (below 100 nF) the high-side MOSFET enters linear operation at high duty cycles. (2) Do not route the LO output near the VS node; the dV/dt coupling can cause the low-side to falsely trigger. (3) The exposed pad is the primary thermal path and the primary electrical ground; failing to solder it increases junction temperature by 30-40 C at full drive. Verify with X-ray inspection on prototype builds.
合规信息
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified (industrial/commercial grade). Lead-free and halogen-free per Infineon's Green Product criteria.
