2ED2108S06FXUMA1 vs 2ED2106S06FXUMA1 对比
详细并排对比 2ED2108S06FXUMA1 出自 Infineon 和 2ED2106S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2ED2108S06FXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.30 | $0.78 |
| Driver Configuration | Half-Bridge | — |
| Number of Drivers | 1 | 2 |
| Gate Type | N-Channel MOSFET, IGBT | — |
| 输出数量 | 2 (high-side + low-side) | 2 (1 high-side, 1 low-side) |
| Logic Input | Non-Inverting | — |
| Input Voltage (VCC) | 10 V to 20 V | — |
| High-Side Bootstrap Voltage Rating | 650 V | — |
| Peak Source Current (typ.) | 0.29 A | — |
| Peak Sink Current (typ.) | 0.7 A | — |
| Integrated Bootstrap Diode | Yes | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB) | — |
| Propagation Delay (typ.) | [DATA_NEEDED: propagation delay ns] | 100 ns |
| Rise / Fall Time (typ.) | [DATA_NEEDED: tr/tf ns] | — |
| 工作温度 | -40 C to +125 C | — |
| 封装 | PG-DSO-8-53 (DSO-8) | PG-DSO-8-69 (DSO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 | — |
| RoHS 状态 | Compliant | — |
| Offset Voltage (Voffset max) | — | 650 V |
| Configuration | — | High-Side and Low-Side (Half-Bridge) |
| Source Current (typ.) | — | 0.29 A |
| Sink Current (typ.) | — | 0.7 A |
| Input Logic Compatibility | — | CMOS, TTL |
| 引脚数 | — | 8 |
| Bootstrap Diode | — | Integrated |
| 工作温度范围 | — | -40C to +125C |
| Packaging | — | Tape & Reel |
| 输出类型 | — | Half-Bridge, Non-Inverting |