2ED2108S06FXUMA1 vs 2ED2106S06FXUMA1 Comparison

Detailed side-by-side comparison of 2ED2108S06FXUMA1 by Infineon and 2ED2106S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED2108S06FXUMA1 2ED2106S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Driver Configuration Half-Bridge —
Number of Drivers 1 2
Gate Type N-Channel MOSFET, IGBT —
Number of Outputs 2 (high-side + low-side) 2 (1 high-side, 1 low-side)
Logic Input Non-Inverting —
Input Voltage (VCC) 10 V to 20 V —
High-Side Bootstrap Voltage Rating 650 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.7 A —
Integrated Bootstrap Diode Yes —
Undervoltage Lockout (UVLO) Yes (VCC and VB) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] 100 ns
Rise / Fall Time (typ.) [DATA_NEEDED: tr/tf ns] —
Operating Temperature -40 C to +125 C —
Package PG-DSO-8-53 (DSO-8) PG-DSO-8-69 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 —
RoHS Status Compliant —
Offset Voltage (Voffset max) — 650 V
Configuration — High-Side and Low-Side (Half-Bridge)
Source Current (typ.) — 0.29 A
Sink Current (typ.) — 0.7 A
Input Logic Compatibility — CMOS, TTL
Number of Pins — 8
Bootstrap Diode — Integrated
Operating Temperature Range — -40C to +125C
Packaging — Tape & Reel
Output Type — Half-Bridge, Non-Inverting

Datasheets & Resources

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