2ED2183S06FXUMA1 vs 1EDI20N12AFXUMA1 对比

详细并排对比 2ED2183S06FXUMA1 出自 Infineon 和 1EDI20N12AFXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2183S06FXUMA1 2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon

2ED2183S06FXUMA1 ✓ 量产中

规格对比

参数 2ED2183S06FXUMA1 1EDI20N12AFXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.05 $1.45
Driver Type Half-Bridge Gate Driver —
Number of Drivers 1 —
输出数量 1 (half-bridge: high-side + low-side) —
Configuration High Side, Low Side, Non-Inverting —
Maximum Offset Voltage 650 V —
Output Current (Sink/Source) 2.5 A typical —
上升时间 15 ns —
下降时间 15 ns —
Supply Voltage (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V (typ.) —
Logic Input Voltage 3.3 V / 5 V compatible (HIN, LIN) —
Input Type Non-Inverting —
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) VCC and VBS —
工作温度 -40 C to +125 C —
封装 PG-DSO-8-53 (DSO-8) PG-DSO-8-51 (DSO-8, 8-pin, narrow body)
安装类型 Surface Mount Surface Mount
MSL 等级 2 2 (per JEDEC J-STD-020)
Terminal Finish Tin (e3 per JESD-609) —
Technology SOI (Silicon-On-Insulator) —
RoHS 状态 Compliant —
Driver Configuration — Single high-side, isolated
Isolation Type — Galvanic (coreless transformer), reinforced
Number of Channels — 1
Maximum Supply Voltage (Output Side) — 17 V
Minimum Supply Voltage (Output Side) — 3.1 V
Peak Source Current — 4.0 A (typical)
Peak Sink Current — 3.5 A (typical)
Working Voltage (Isolation) — 1200 V (high-side rail reference)
Propagation Delay — 120 ns (typical)
输出配置 — Separate source and sink pins
Short-Circuit Clamping — Yes (built-in)
工作温度范围 — -40 °C to +125 °C
RoHS Compliance — Compliant
Lead-Free — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价