2ED2183S06FXUMA1 - 650V 2.5A Half-Bridge Gate Driver | Infineon
料号： 2ED2183S06FXUMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.18 | $2.18 |
| 10 | $1.94 | $19.40 |
| 100 | $1.62 | $162.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.21 | $1,210.00 |
| 3,000 | $1.05 | $3,150.00 |
2ED2183S06FXUMA1 概述
A gate driver is a power-management IC that sits between a low-power controller (MCU, DSP, FPGA) and the gate of a high-power switching transistor. It translates 3.3 V or 5 V logic into the 10 V to 20 V gate-drive levels required by power MOSFETs and IGBTs, providing the current needed to charge and discharge the gate quickly. The half-bridge configuration drives a high-side and a low-side switch in phase-leg topologies such as synchronous rectifiers, motor inverters, and class-D amplifiers. Within the power-management hierarchy, gate drivers form the interface layer between control ICs and power MOSFETs/IGBTs in the discrete-semiconductor switching chain.
Key features include a wide VCC supply range of 10 V to 20 V, integrated bootstrap diode for the high-side supply, 650 V absolute maximum offset voltage tolerating 600 V+ bus rails, undervoltage lockout (UVLO) for both VCC and VBS rails, and matched propagation delays for low distortion. The non-inverting inputs (HIN, LIN) accept 3.3 V/5 V logic and the SOI (Silicon-On-Insulator) process technology provides robust negative-transient immunity on the VS pin, eliminating the need for an external level-shift network in most applications.
The SOI process allows monolithic integration of high-voltage level-shifters and low-voltage logic on the same die, yielding superior latch-up immunity and dv/dt noise rejection compared to junction-isolated drivers. Built-in shoot-through protection logic prevents simultaneous high-side and low-side conduction, while the integrated bootstrap diode removes a discrete component from the BOM and reduces parasitic inductance in the high-side supply loop.
Typical applications include motor drives for home appliances and industrial fans, high-frequency DC-DC converters, solar microinverters and string inverters, induction-heating power stages, and switched-mode power supplies with PFC. The compact DSO-8 footprint and integrated bootstrap diode make it a strong choice for space-constrained inverter designs.
When designing with this device, place the bootstrap capacitor (typically 1 uF to 10 uF ceramic) as close to the VB and VS pins as possible and keep the high-side switching loop area minimal to limit ringing. Ensure VCC decoupling with at least 100 nF of low-ESR ceramic placed within 5 mm of the VCC pin.
直接替换替代料： 2ED2183S06FXUMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 2ED2183S06FXUMA1 （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Configuration, Number of Outputs, Driver Configuration.
快速对比工具——选择替代料号进行并排对比：
2ED2182S06FXUMA1
✅ 直接替换📋 参考替代料（不在目录中）
2ED2184S06FXUMA1
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
2EDN7534FXTMA1
✅ 直接替换✓ 有现货
$0.71 / 个
查看数据手册 →IR2104STRPBF
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.59 / 个
查看数据手册 →IRS2184SPBF
✅ 直接替换✓ 有现货
$0.99 / 个
查看数据手册 →2ED2183S06FXUMA1 最大额定值与电气特性
| Driver Type | Half-Bridge Gate Driver |
| Number of Drivers | 1 |
| 输出数量 | 1 (half-bridge: high-side + low-side) |
| Configuration | High Side, Low Side, Non-Inverting |
| Maximum Offset Voltage | 650 V |
| Output Current (Sink/Source) | 2.5 A typical |
| 上升时间 | 15 ns |
| 下降时间 | 15 ns |
| Supply Voltage (VCC) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 20 V (typ.) |
| Logic Input Voltage | 3.3 V / 5 V compatible (HIN, LIN) |
| Input Type | Non-Inverting |
| Bootstrap Diode | Integrated |
| Undervoltage Lockout (UVLO) | VCC and VBS |
| 工作温度 | -40 C to +125 C |
| 封装 | PG-DSO-8-53 (DSO-8) |
| 安装类型 | Surface Mount |
| MSL 等级 | 2 |
| Terminal Finish | Tin (e3 per JESD-609) |
| Technology | SOI (Silicon-On-Insulator) |
| RoHS 状态 | Compliant |
2ED2183S06FXUMA1 引脚配置
| 引脚 1 | VCC — Low-side and logic supply voltage (10V to 20V) |
| 引脚 2 | HIN — Logic input for high-side gate driver (non-inverting) |
| 引脚 3 | LIN — Logic input for low-side gate driver (non-inverting) |
| 引脚 4 | GND — Ground reference for logic and low-side driver |
| 引脚 5 | LO — Low-side gate-drive output to low-side MOSFET/IGBT gate |
| 引脚 6 | VS — High-side floating supply return (connected to half-bridge midpoint) |
| 引脚 7 | HO — High-side gate-drive output to high-side MOSFET/IGBT gate |
| 引脚 8 | VB — High-side floating bootstrap supply (bootstrap capacitor to VS) |
典型应用
2ED2183S06FXUMA1 适用于 6 应用s: Industrial Motor Drives, Solar Microinverters and String Inverters, Switched-Mode Power Supplies (SMPS), Induction Heating Cooktops and Appliances, Class-D Audio Amplifiers, Battery-Powered Power Tools and E-Bikes.
Industrial Motor Drives
The 2ED2183S06FXUMA1 drives the high-side and low-side IGBTs in three-phase variable-frequency drives for industrial pumps, fans, and conveyor motors. Its 650 V maximum offset voltage comfortably exceeds the 400 V to 480 V rectified bus levels common in industrial motor control, while the 2.5 A sink/source current and 15 ns rise/fall times enable switching frequencies up to 20 kHz to suppress audible noise without exceeding switching losses. The integrated bootstrap diode simplifies the high-side supply generation in each phase leg, reducing BOM count and PCB area in multi-axis drive systems.
推荐
Solar Microinverters and String Inverters
In photovoltaic inverter power stages, the 2ED2183S06FXUMA1 drives the half-bridge switching cells that convert the 600 V-class DC bus into grid-quality AC. The 650 V rating provides 50 V margin above the maximum open-circuit voltage of 600 V solar strings, and the SOI process technology delivers superior dv/dt noise immunity essential when switching high-voltage IGBTs in noisy PV environments. The integrated bootstrap diode reduces component count on the high-voltage side, critical for compact microinverter form factors targeting residential rooftop installations.
推荐
Switched-Mode Power Supplies (SMPS)
The 2ED2183S06FXUMA1 is well-suited to half-bridge and full-bridge SMPS topologies used in telecom rectifiers, server power supplies, and industrial DC-DC converters. Its 2.5 A gate-drive current can switch 600 V MOSFETs at frequencies exceeding 100 kHz, supporting higher power density through smaller magnetics. The UVLO on both VCC and VBS rails prevents cross-conduction during startup and brownout events, protecting the power stage from catastrophic failure. The non-inverting inputs (HIN, LIN) interface directly with 3.3 V DSP and FPGA PWM outputs without level-shifting logic.
推荐
Induction Heating Cooktops and Appliances
Resonant half-bridge inverter topologies in induction cooktops operate at 20 kHz to 75 kHz, switching high-current IGBTs into resonant LC tanks. The 2ED2183S06FXUMA1's 15 ns propagation delay and matched channel-to-channel timing minimize dead-time losses, which directly impact cooktop efficiency and audible noise. The 650 V rating handles the 600 V rectified mains comfortably, and the integrated bootstrap diode reduces the part count on the high-side floating supply rail. The -40 C to +125 C operating range suits the hot ambient environment inside cooktop enclosures.
推荐
Class-D Audio Amplifiers
Half-bridge Class-D amplifiers benefit from the 2ED2183S06FXUMA1's matched propagation delays, which preserve audio signal integrity by ensuring symmetric switching of the high-side and low-side MOSFETs. While most Class-D audio amplifiers run at lower bus voltages (<100 V), the part's 2.5 A drive current and 15 ns rise/fall times deliver clean PWM switching that minimizes total harmonic distortion (THD). The SOI process eliminates the negative-transient glitches that plague junction-isolated drivers, reducing audible clicks and pops during speaker-protect transitions.
推荐
Battery-Powered Power Tools and E-Bikes
Brushless DC (BLDC) motor controllers in cordless power tools and e-bikes benefit from the compact 2ED2183S06FXUMA1 to drive three-phase MOSFET bridges from battery voltages of 36 V to 96 V. The DSO-8 footprint and integrated bootstrap diode minimize PCB area, critical for space-constrained tool housings. The 2.5 A drive current handles the high inrush currents during motor startup, while UVLO protects the MOSFETs from partial-gate-voltage operation that would cause excessive heat dissipation. The -40 C cold-start rating suits outdoor power-tool and e-bike deployments.
推荐
推荐产品汇总
工程参考数据： 2ED2183S06FXUMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2ED2182S06FXUMA1 | 2ED2184S06FXUMA1 | 2EDN7534FXTMA1 | IR2104STRPBF | IRS2184SPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | DSO-8 (PG-DSO-8-53) | DSO-8 (PG-DSO-8-53) - same | DSO-8 - same | DSO-8 - same | SOIC-8 - compatible | SOIC-8 - compatible |
| Maximum Offset Voltage | 650 V | 650 V | 650 V | 120 V | 600 V | 600 V |
| Output Current | 2.5 A sink/source | 2.5 A | 2.5 A+ | 5 A | 0.6 A | 1.9 A |
| Integrated Bootstrap Diode | Yes | Yes | Yes | No | No | No |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 4.5 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
关键差异点
- Integrated bootstrap diode reduces BOM by 1 component （对比 IR2104STRPBF)
- Higher offset voltage rating (650 V vs 600 V) （对比 IRS2184SPBF)
- Faster switching transitions (15 ns vs 70 ns rise) （对比 IR2104STRPBF)
- SOI technology provides superior negative-transient immunity （对比 IR2104STRPBF)
设计说明
Place the bootstrap capacitor (typically 1 uF to 10 uF X7R ceramic) directly between VB (pin 8) and VS (pin 6) with traces shorter than 5 mm to minimize parasitic inductance. The high-side switching loop (HO, gate resistor, MOSFET gate-source, VS return) should be kept compact - this loop carries the highest di/dt and its inductance determines the gate-drive ringing amplitude. Add a 100 nF to 1 uF ceramic decoupling capacitor on VCC within 2 mm of the VCC pin, with a separate ground return to the power-stage GND plane.
Estimated: At 2.5 A peak gate current and 15 ns rise/fall time, the gate-driver dissipation is approximately 0.05 W per channel at 100 kHz, well within the DSO-8 thermal envelope. However, when switching large MOSFETs (>50 nC Qg) at high frequency (>200 kHz), total driver dissipation can exceed 0.5 W and the exposed pad must be soldered to a 1 cm² copper pour. Without the pad, the thermal resistance rises from approximately 50 C/W to over 150 C/W, potentially triggering thermal shutdown at 150 C junction temperature.
Do not exceed the absolute maximum VS transient voltage of -50 V (negative transient). The SOI process provides excellent negative-transient immunity, but sustained negative VS swings below -10 V can still cause latch-up. If the half-bridge midpoint can swing below ground (such as in motor regenerative braking), add a small Schottky diode (e.g., BAT54S) between VS and GND. Also verify that the HIN/LIN inputs do not exceed 5.5 V; a series resistor of 1 kohm is recommended when connecting directly to a 5 V MCU GPIO without an internal clamp.
Keep the gate-drive traces (HIN, LIN, HO, LO) away from the power-stage switching nodes to avoid capacitive coupling that can inject false trigger pulses. Use a 4-layer PCB with a continuous ground plane below the driver and MOSFET/IGBT area. The exposed thermal pad of the DSO-8 package should have at least 4 thermal vias (0.3 mm diameter) connecting to the inner ground plane for optimal heat spreading. Avoid running gate-drive return traces through the power-stage ground region - use a dedicated driver-side ground.
合规信息
RoHS compliant per Infineon product page; tin (e3) finish per JESD-609; not AEC-Q100 qualified. Industrial-grade (-40C to +125C) operating range.
