2ED21844S06JXUMA1 vs 6EDL04N02PRXUMA1 对比

详细并排对比 2ED21844S06JXUMA1 出自 Infineon 和 6EDL04N02PRXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED21844S06JXUMA1 2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon

2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon

2ED21844S06JXUMA1 ✓ 量产中
Infineon
6EDL04N02PRXUMA1 6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 - 200V 3-Phase Gate Driver IC | Infineon

6EDL04N02PRXUMA1 ✓ 量产中

规格对比

参数 2ED21844S06JXUMA1 6EDL04N02PRXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.68 $2.32
Driver Configuration Half-Bridge Half-bridge (3 high-side + 3 low-side)
Number of Drivers 2 (high-side + low-side) —
Input Type Non-Inverting —
Blocking Voltage (Voffset) 650 V —
Output Current (Source/Sink) 2.5 A typical —
Bootstrap Diode Integrated Integrated (BSD) on all 3 high-side drivers
Supply Voltage (VCC) 10 V to 20 V [DATA_NEEDED: exact range] —
Propagation Delay (Typ.) 200 ns [DATA_NEEDED: matching value] —
Input Logic Compatibility TTL/CMOS 3.3 V and 5 V CMOS / LSTTL, 3.3 V and 5 V
Undervoltage Lockout (UVLO) Yes, both HS and LS rails —
Shutdown Pin Yes —
Negative VS Transient Immunity -100 V typical —
工作温度范围 -40 C to +125 C -40 °C to +125 °C
封装 PG-DSO-14-49 (DSO-14) PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL level] MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level])
RoHS 状态 Compliant Compliant
Product Type — 3-Phase Gate Driver IC
Maximum Blocking Voltage — +180 V (VS referenced to GND for high side)
Rated Supply Voltage (VCC) — 200 V class (operating range 10 V to 20 V on VCC)
Source Current (typ.) — 0.375 A
Sink Current (typ.) — 0.75 A
Over-Current Protection — Yes (single-shunt, ITRIP/CIN pin)
Enable Pin (EN) — Yes (active-high)
Fault Output (nFAULT) — Yes (active-low, open-drain)
Interlocking / Anti-shoot-through — Yes (built-in per phase pair)
Process Technology — Thin-film SOI (Silicon-On-Insulator)
Maximum Junction Temperature — +150 °C
Target Switches — MOSFETs up to 180 V, IGBTs up to 180 V

数据手册与资源

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