2ED21844S06JXUMA1 vs 6EDL04N02PRXUMA1 Comparison
Detailed side-by-side comparison of 2ED21844S06JXUMA1 by Infineon and 6EDL04N02PRXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2ED21844S06JXUMA1
2ED21844S06JXUMA1 - 650V Half-Bridge Gate Driver 2.5A | Infineon
2ED21844S06JXUMA1 β Active
Specification Comparison
| Parameter | 2ED21844S06JXUMA1 | 6EDL04N02PRXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $2.32 |
| Driver Configuration | Half-Bridge | Half-bridge (3 high-side + 3 low-side) |
| Number of Drivers | 2 (high-side + low-side) | β |
| Input Type | Non-Inverting | β |
| Blocking Voltage (Voffset) | 650 V | β |
| Output Current (Source/Sink) | 2.5 A typical | β |
| Bootstrap Diode | Integrated | Integrated (BSD) on all 3 high-side drivers |
| Supply Voltage (VCC) | 10 V to 20 V [DATA_NEEDED: exact range] | β |
| Propagation Delay (Typ.) | 200 ns [DATA_NEEDED: matching value] | β |
| Input Logic Compatibility | TTL/CMOS 3.3 V and 5 V | CMOS / LSTTL, 3.3 V and 5 V |
| Undervoltage Lockout (UVLO) | Yes, both HS and LS rails | β |
| Shutdown Pin | Yes | β |
| Negative VS Transient Immunity | -100 V typical | β |
| Operating Temperature Range | -40 C to +125 C | -40 Β°C to +125 Β°C |
| Package | PG-DSO-14-49 (DSO-14) | PG-TSSOP-28 (28-pin, 4.40 mm width, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | MSL3 (per JEDEC J-STD-020, [DATA_NEEDED: confirm level]) |
| RoHS Status | Compliant | Compliant |
| Product Type | β | 3-Phase Gate Driver IC |
| Maximum Blocking Voltage | β | +180 V (VS referenced to GND for high side) |
| Rated Supply Voltage (VCC) | β | 200 V class (operating range 10 V to 20 V on VCC) |
| Source Current (typ.) | β | 0.375 A |
| Sink Current (typ.) | β | 0.75 A |
| Over-Current Protection | β | Yes (single-shunt, ITRIP/CIN pin) |
| Enable Pin (EN) | β | Yes (active-high) |
| Fault Output (nFAULT) | β | Yes (active-low, open-drain) |
| Interlocking / Anti-shoot-through | β | Yes (built-in per phase pair) |
| Process Technology | β | Thin-film SOI (Silicon-On-Insulator) |
| Maximum Junction Temperature | β | +150 Β°C |
| Target Switches | β | MOSFETs up to 180 V, IGBTs up to 180 V |