2EDL8033G4CXTMA1 - 120V Half-Bridge Gate Driver IC | Infineon
料号： 2EDL8033G4CXTMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.61 | $4.61 |
| 10 | $4.15 | $41.50 |
| 100 | $3.62 | $362.00 |
| 500 | $3.18 | $1,590.00 |
| 1,000 | $2.84 | $2,840.00 |
2EDL8033G4CXTMA1 概述
A half-bridge gate driver IC is a power-management semiconductor that sits between a low-voltage control MCU and the high-voltage, high-current power switches in a switching converter. It belongs to the broader hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. The 2EDL8033G4CXTMA1 specifically targets the half-bridge / synchronous-rectifier class, where one high-side and one low-side switch must be driven with a strict dead-time to prevent shoot-through.
Key features include 3 A source / 4 A sink gate-drive current for fast MOSFET switching, 120 V bootstrap tolerance that covers 80 V / 100 V / 120 V-class MOSFET buses, integrated bootstrap diode to reduce external BOM, and junction-isolation technology that delivers >2 kV transient withstand between input logic and high-side drive. The driver operates from a VCC range of 10 V to 20 V (typical 12 V) and offers a propagation delay of typically 45 ns with <10 ns channel-to-channel matching, suitable for switching frequencies up to several hundred kHz.
The architecture uses level-shifting high-side drive with a floating bootstrap supply referenced to the half-bridge switching node (HS pin). This allows the high-side gate to float up to 120 V above the IC ground, enabling high-density buck, boost, half-bridge, and full-bridge topologies. Junction isolation avoids the cost and size of transformer or digital isolators while still providing robust dv/dt immunity in noisy switching environments.
Typical applications include telecom and server isolated DC-DC brick converters, industrial motor-control half-bridges, solar micro-inverters, Class-D audio amplifiers, and eMobility auxiliary power stages. The exposed thermal pad of the PG-VDSON-10-2 package supports continuous switching at high frequency without thermal derating.
When designing with this part, place a low-ESR 1 uF to 4.7 uF ceramic bypass capacitor directly on the VCC pin and a 100 nF boot capacitor between HB and HS. Maintain PCB creepage between the high-side exposed pad and the logic-side ground per IPC-2221 to preserve the rated isolation withstand.
This page synthesizes distributor pricing, pin-compatible drop-in alternatives, and practical PCB design notes not found in the manufacturer datasheet.
直接替换替代料： 2EDL8033G4CXTMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： 2EDL8033G4CXTMA1 （相同外形与封装尺寸） ——差异在于 Package, Number of Channels, Driver Type, Product Type, Output Configuration.
快速对比工具——选择替代料号进行并排对比：
2EDL8034G4CXTMA1
✅ 直接替换✓ 有现货
$1.55 / 个
查看数据手册 →2EDL6014ACG2DXTMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1.18 / 个
查看数据手册 →2EDL5023U2DXTMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1.4 / 个
查看数据手册 →2EDL8124GXUMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.98 / 个
查看数据手册 →2EDR8258XXUMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.74 / 个
查看数据手册 →2EDL8033G4CXTMA1 最大额定值与电气特性
| Product Type | Half-Bridge Gate Driver IC |
| Configuration | High-Side / Low-Side, Non-Inverting |
| 输出数量 | 2 (HS + LS) |
| Source Drive Current | 3 A |
| Sink Drive Current | 4 A |
| Bootstrap Voltage (Max) | 120 V |
| VCC Supply Voltage | 10 V to 20 V |
| Logic Input Compatibility | 3.3 V / 5 V CMOS / TTL |
| Isolation Technology | Junction-isolated |
| Propagation Delay (Typ) | 45 ns |
| Channel-to-Channel Matching | <10 ns |
| Integrated Bootstrap Diode | Yes |
| 工作温度范围 | -40C to +125C |
| 封装 | PG-VDSON-10-2 (10-pin VDSON with exposed pad) |
| 安装类型 | Surface Mount |
| Marking Code | 2ED8033G4C |
| RoHS 状态 | Compliant |
2EDL8033G4CXTMA1 引脚配置
| 引脚 1 | VDD — Logic supply input (3.3 V / 5 V) |
| 引脚 2 | HIN — High-side logic input (non-inverting) |
| 引脚 3 | LIN — Low-side logic input (non-inverting) |
| 引脚 4 | VCC — Gate-drive supply (10-20 V) |
| 引脚 5 | VSS — Logic and gate-drive ground |
| 引脚 6 | LO — Low-side gate-drive output to MOSFET gate |
| 引脚 7 | HS — High-side source / switching-node return |
| 引脚 8 | HO — High-side gate-drive output to MOSFET gate |
| 引脚 9 | HB — High-side bootstrap supply (floating) |
| 引脚 10 | EP — Exposed thermal pad - connect to VSS for thermal relief |
典型应用
2EDL8033G4CXTMA1 适用于 6 应用s: Telecom Isolated DC-DC Brick Converter, Industrial Motor Drive Half-Bridge, Solar Micro-Inverter Power Stage, Class-D Audio Amplifier Output Stage, eMobility Auxiliary DC-DC Converter, Server and Datacenter VRM Half-Bridge.
Telecom Isolated DC-DC Brick Converter
The 2EDL8033G4CXTMA1 drives the primary-side synchronous-rectifier MOSFETs in 48 V to point-of-load telecom bricks operating from 80 V to 120 V bus rails. The 120 V bootstrap tolerance covers 100 V-rated MOSFETs with margin, while 3 A source / 4 A sink drive current enables sub-10 ns edge transitions that minimize switching losses at 100 kHz to 500 kHz. The integrated bootstrap diode reduces external BOM by one high-voltage component per half-bridge, critical for compact quarter-brick and eighth-brick footprints.
推荐
Industrial Motor Drive Half-Bridge
In industrial 3-phase motor drives operating from 24 V to 96 V bus rails, three 2EDL8033G4CXTMA1 drivers independently control each phase leg with matched 45 ns propagation delay and <10 ns channel-to-channel matching. This tight timing minimizes dead-time, reducing body-diode conduction losses and audible switching noise. The 3 A / 4 A drive strength directly drives 80 V to 100 V N-channel MOSFETs without external gate-buffer stages, simplifying the inverter BOM and reducing PCB area in compact IPM-style modules.
推荐
Solar Micro-Inverter Power Stage
Solar micro-inverters operating from 30 V to 80 V panel inputs use the 2EDL8033G4CXTMA1 to drive the primary-side MOSFETs of the high-frequency isolation stage and the secondary synchronous rectifiers. The 120 V bootstrap rating exceeds the 100 V MOSFET bus requirement with safety margin for transients, while the junction-isolation technology rejects the high dv/dt present at the switching node. The exposed thermal pad of the PG-VDSON-10-2 package dissipates gate-charge losses continuously in outdoor-mounted inverter enclosures up to 85 C ambient.
推荐
Class-D Audio Amplifier Output Stage
Class-D audio amplifiers use the 2EDL8033G4CXTMA1 to switch the output half-bridge MOSFETs that drive the LC low-pass filter and speaker load. The 45 ns propagation delay and matched channel-to-channel timing are critical for minimizing total harmonic distortion (THD), while the 3 A / 4 A drive current enables sub-20 ns switching edges that keep switching losses manageable at 250 kHz to 500 kHz PWM frequencies. The integrated bootstrap diode reduces board area in space-constrained soundbar and bookshelf-speaker applications.
推荐
eMobility Auxiliary DC-DC Converter
In eMobility 48 V mild-hybrid systems, the 2EDL8033G4CXTMA1 drives auxiliary DC-DC converters that step down from 48 V to 12 V rails. The 120 V bootstrap rating comfortably covers the 48 V bus including load-dump transients up to 70 V, while 3 A source / 4 A sink current directly switches 80 V or 100 V MOSFETs without gate-buffer amplification. AEC-Q100-grade reliability at -40 C to +125 C ambient supports under-hood mounting, and the small PG-VDSON-10-2 footprint enables compact PCB layouts inside sealed IP67 inverter housings.
推荐
Server and Datacenter VRM Half-Bridge
Server and datacenter VRM phases operating from 48 V bus rails use the 2EDL8033G4CXTMA1 to drive the primary-side half-bridge MOSFETs of multi-phase buck-derived topologies. The 120 V bootstrap tolerance suits 80 V or 100 V primary MOSFETs, while the 3 A / 4 A drive current enables 100 kHz to 300 kHz switching for high power density. The integrated bootstrap diode and small VDSON footprint allow the driver to sit directly adjacent to the half-bridge, minimizing gate-drive loop inductance that would otherwise cause voltage ringing and EMI issues.
推荐
推荐产品汇总
工程参考数据： 2EDL8033G4CXTMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | 2EDL8034G4CXTMA1 | 2EDL6014ACG2DXTMA1 | 2EDL5023U2DXTMA1 | 2EDL8124GXUMA1 | 2EDR8258XXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VDSON-10-2 | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same |
| Source / Sink Drive Current | 3 A / 4 A | Higher than 3/4 A per family datasheet | Lower current tier per family datasheet | Lower current tier per family datasheet | Higher drive current per family datasheet | Comparable tier with reinforced isolation |
| Bootstrap Voltage (Max) | 120 V | 120 V | Comparable per datasheet | Comparable per datasheet | Comparable per datasheet | Comparable per datasheet |
| Isolation Technology | Junction-isolated | Junction-isolated | Junction-isolated | Junction-isolated | Junction-isolated | Galvanically isolated |
| Integrated Bootstrap Diode | Yes | Yes | Yes (per family datasheet) | Yes (per family datasheet) | Yes (per family datasheet) | Yes |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | Comparable per datasheet | Comparable per datasheet | Comparable per datasheet | Comparable per datasheet |
| Propagation Delay (Typ) | 45 ns | Comparable per family | Comparable per family | Comparable per family | Comparable per family | Comparable per family |
关键差异点
- 120 V bootstrap tolerance covers 100 V-class MOSFET buses with margin （对比 IRS21867STRPBF)
- Integrated bootstrap diode reduces BOM by one component per half-bridge （对比 2EDR8258XXUMA1)
- 3 A source / 4 A sink drive current enables direct drive of medium-size MOSFETs （对比 2EDL5023U2DXTMA1)
设计说明
Place the VCC bypass capacitor (low-ESR 1 uF to 4.7 uF ceramic) within 5 mm of the VCC pin, and the boot capacitor (100 nF ceramic) directly between HB and HS pins to minimize parasitic inductance in the high-side gate-drive loop. Keep the gate-drive traces short and wide (at least 0.5 mm / 20 mil) and surround them with a continuous ground plane to control dv/dt-induced ringing at the switching node.
Estimated: at 100 kHz switching with Qg_total of 50 nC across both MOSFETs, gate-drive losses equal 100 kHz x 50 nC x 12 V = 60 mW - well within the package capability. The exposed thermal pad of the PG-VDSON-10-2 package must be soldered to a copper pour of at least 50 mm^2 on top layer, with thermal vias connecting to inner planes, to maintain junction temperature below 125 C in enclosed industrial environments up to 85 C ambient.
Do not exceed the 120 V absolute maximum on the HB-to-HS pins - transient overshoot from the switching-node parasitic inductance can drive this above rating during hard switch-off of high-current MOSFETs. Add a small RC snubber (4.7 ohm + 1 nF) across the low-side MOSFET if measured HS ringing exceeds 100 V. Also verify the boot capacitor refreshes each switching cycle: insufficient dead-time or excessive Qg can deplete the bootstrap supply and collapse the high-side gate drive.
Maintain at least 2.5 mm creepage between the high-side exposed pad region (HO, HB, HS pins) and the low-voltage logic-side copper (VDD, HIN, LIN) per IPC-2221 to preserve the rated isolation withstand. Avoid routing any logic trace under the exposed pad or near the HS pin return path. The single-point ground connection at VSS minimizes high-side switching currents from flowing through the logic ground reference, preventing logic-level noise injection into the MCU inputs.
合规信息
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - choose automotive-grade Infineon driver from EiceDRIVER family if required. Halogen-free per Infineon green-product declaration.
